6 research outputs found
DESIGN OF THE CONTACT POTENTIALS DIFFERENCE PROBES
The contact potential difference probes distinguished by great variety and produced mostly in the laboratory for specific experimental applications. As a rule, they consist of commercially available instrumentation, and have a number of disadvantages: large dimensions, complexity and high cost, small sensitivity, operating speed, noiseproof, etc. The purpose of this paper is to describe the basic approaches to design of the small dimension, complete contact potential difference probes, providing high sensitivity, operating speed, and noise immunity. In this paper the contact potential difference probe, which is a electrometer with dynamic capacitor plate at about 0.1β5 mm2 . These probes are could be used in scanning systems, such as a Scanning Kelvin Probe, as well as for controlling system of manufacturing processes, e.g. under friction. The design of such contact potential difference probes conducted using modern electronic components, unique circuitry and design solutions described in detail at paper. The electromechanical modulator applied for mechanical vibrations of the reference sample. To provide a high amplitude and phase stability the upgraded generator with Wien bridge was used instead traditional oscillation sensor. The preamplifier made on the base of modern operational amplifiers with femtoampere current input. The power of the preamplifier designed with Β«floating groundΒ». It allows keeping the relation constant potential to the probe components when changing over a wide range the compensation voltage. The phase detector-integrator based on the electronic antiphase switches with the modulation frequency of the contact potential difference and the integrator. Fullwave phase detection would greatly increase the sensitivity of the probe. In addition, the application of the phase detection allows suppressing noise and crosstalk at frequencies different from the modulation frequency. The preamplifier and the reference sample mounted on a flexible printed circuit board and the edge mechanically connected with a vibrator. Modulator, phase detector-integrator, and other electronic components placed on a separate board. This design contributes to reduce the influence of electromagnetic interference and noise as well as removing microphonic effects, etc
ΠΠΠ‘Π’Π ΠΠΠΠΠ ΠΠΠΠΠ ΠΠ’ΠΠΠΠ ΠΠΠΠ’ΠΠΠ’ΠΠΠ Π ΠΠΠΠΠ‘Π’Π ΠΠΠ’ΠΠΠ¦ΠΠΠΠΠ
The contact potential difference probes distinguished by great variety and produced mostly in the laboratory for specific experimental applications. As a rule, they consist of commercially available instrumentation, and have a number of disadvantages: large dimensions, complexity and high cost, small sensitivity, operating speed, noiseproof, etc. The purpose of this paper is to describe the basic approaches to design of the small dimension, complete contact potential difference probes, providing high sensitivity, operating speed, and noise immunity. In this paper the contact potential difference probe, which is a electrometer with dynamic capacitor plate at about 0.1β5 mm2 . These probes are could be used in scanning systems, such as a Scanning Kelvin Probe, as well as for controlling system of manufacturing processes, e.g. under friction. The design of such contact potential difference probes conducted using modern electronic components, unique circuitry and design solutions described in detail at paper. The electromechanical modulator applied for mechanical vibrations of the reference sample. To provide a high amplitude and phase stability the upgraded generator with Wien bridge was used instead traditional oscillation sensor. The preamplifier made on the base of modern operational amplifiers with femtoampere current input. The power of the preamplifier designed with Β«floating groundΒ». It allows keeping the relation constant potential to the probe components when changing over a wide range the compensation voltage. The phase detector-integrator based on the electronic antiphase switches with the modulation frequency of the contact potential difference and the integrator. Fullwave phase detection would greatly increase the sensitivity of the probe. In addition, the application of the phase detection allows suppressing noise and crosstalk at frequencies different from the modulation frequency. The preamplifier and the reference sample mounted on a flexible printed circuit board and the edge mechanically connected with a vibrator. Modulator, phase detector-integrator, and other electronic components placed on a separate board. This design contributes to reduce the influence of electromagnetic interference and noise as well as removing microphonic effects, etc.Β ΠΠ·ΠΌΠ΅ΡΠΈΡΠ΅Π»ΠΈ ΠΊΠΎΠ½ΡΠ°ΠΊΡΠ½ΠΎΠΉ ΡΠ°Π·Π½ΠΎΡΡΠΈ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»ΠΎΠ² ΠΎΡΠ»ΠΈΡΠ°ΡΡΡΡ Π±ΠΎΠ»ΡΡΠΈΠΌ ΠΌΠ½ΠΎΠ³ΠΎΠΎΠ±ΡΠ°Π·ΠΈΠ΅ΠΌ ΠΈ ΠΈΠ·Π³ΠΎΡΠ°Π²Π»ΠΈΠ²Π°ΡΡΡΡ Π² ΠΎΡΠ½ΠΎΠ²Π½ΠΎΠΌ Π² Π»Π°Π±ΠΎΡΠ°ΡΠΎΡΠ½ΡΡ
ΡΡΠ»ΠΎΠ²ΠΈΡΡ
Π΄Π»Ρ ΠΊΠΎΠ½ΠΊΡΠ΅ΡΠ½ΡΡ
ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΡ
Π·Π°Π΄Π°Ρ. ΠΠ°ΠΊ ΠΏΡΠ°Π²ΠΈΠ»ΠΎ, ΠΎΠ½ΠΈ ΡΠΎΡΡΠΎΡΡ ΠΈΠ· ΡΠ΅ΡΠΈΠΉΠ½ΠΎ Π²ΡΠΏΡΡΠΊΠ°Π΅ΠΌΡΡ
ΠΈΠ·ΠΌΠ΅ΡΠΈΡΠ΅Π»ΡΠ½ΡΡ
ΠΏΡΠΈΠ±ΠΎΡΠΎΠ² ΠΈ ΠΏΠΎΡΡΠΎΠΌΡ ΠΎΠ±Π»Π°Π΄Π°ΡΡ ΡΡΠ΄ΠΎΠΌ Π½Π΅Π΄ΠΎΡΡΠ°ΡΠΊΠΎΠ², Π½Π°ΠΏΡΠΈΠΌΠ΅Ρ Π±ΠΎΠ»ΡΡΠΈΠΌΠΈ Π³Π°Π±Π°ΡΠΈΡΠ°ΠΌΠΈ, ΡΠ»ΠΎΠΆΠ½ΠΎΡΡΡΡ ΠΈ Π²ΡΡΠΎΠΊΠΎΠΉ ΡΡΠΎΠΈΠΌΠΎΡΡΡΡ, Π½ΠΈΠ·ΠΊΠΈΠΌΠΈ ΡΡΠ²ΡΡΠ²ΠΈΡΠ΅Π»ΡΠ½ΠΎΡΡΡΡ, Π±ΡΡΡΡΠΎΠ΄Π΅ΠΉΡΡΠ²ΠΈΠ΅ΠΌ, ΠΏΠΎΠΌΠ΅Ρ
ΠΎΠ·Π°ΡΠΈΡΠ΅Π½Π½ΠΎΡΡΡΡ ΠΈ Π΄Ρ. Π¦Π΅Π»ΡΡ ΡΠ°Π±ΠΎΡΡ ΡΠ²Π»ΡΠ»ΠΎΡΡ ΠΎΠΏΠΈΡΠ°Π½ΠΈΠ΅ Π±Π°Π·ΠΎΠ²ΡΡ
ΠΏΠΎΠ΄Ρ
ΠΎΠ΄ΠΎΠ² ΠΊ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ΅ ΠΈ ΠΊΠΎΠ½ΡΡΡΡΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΌΠ°Π»ΠΎΠ³Π°Π±Π°ΡΠΈΡΠ½ΡΡ
, ΠΏΠΎΠ»Π½ΠΎΡΡΡΡ ΡΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½Π½ΡΡ
ΠΈΠ·ΠΌΠ΅ΡΠΈΡΠ΅Π»Π΅ΠΉ ΠΊΠΎΠ½ΡΠ°ΠΊΡΠ½ΠΎΠΉ ΡΠ°Π·Π½ΠΎΡΡΠΈ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»ΠΎΠ², ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠΈΠ²Π°ΡΡΠΈΡ
Π²ΡΡΠΎΠΊΡΡ ΡΡΠ²ΡΡΠ²ΠΈΡΠ΅Π»ΡΠ½ΠΎΡΡΡ, Π±ΡΡΡΡΠΎΠ΄Π΅ΠΉΡΡΠ²ΠΈΠ΅ ΠΈ ΠΏΠΎΠΌΠ΅Ρ
ΠΎΠ·Π°ΡΠΈΡΠ΅Π½Π½ΠΎΡΡΡ. ΠΠ»Ρ Π²ΠΎΠ·Π±ΡΠΆΠ΄Π΅Π½ΠΈΡ ΠΌΠ΅Ρ
Π°Π½ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΊΠΎΠ»Π΅Π±Π°Π½ΠΈΠΉ ΡΡΠ°Π»ΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΎΠ±ΡΠ°Π·ΡΠ° ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ΅Ρ
Π°Π½ΠΈΡΠ΅ΡΠΊΠΈΠΉ ΠΌΠΎΠ΄ΡΠ»ΡΡΠΎΡ, Π² ΠΊΠΎΡΠΎΡΠΎΠΌ Π΄Π»Ρ ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠ΅Π½ΠΈΡ Π²ΡΡΠΎΠΊΠΎΠΉ Π°ΠΌΠΏΠ»ΠΈΡΡΠ΄Π½ΠΎ-ΡΠ°Π·ΠΎΠ²Π°Ρ ΡΡΠ°Π±ΠΈΠ»ΡΠ½ΠΎΡΡΠΈ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΠ΅ΡΡΡ ΠΌΠΎΠ΄Π΅ΡΠ½ΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Π½ΡΠΉ Π³Π΅Π½Π΅ΡΠ°ΡΠΎΡ Ρ ΠΌΠΎΡΡΠΎΠΌ ΠΠΈΠ½Π°, ΡΡΠΎ ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠΈΠ²Π°Π΅Ρ Π·Π°Ρ
Π²Π°Ρ ΠΈ ΠΏΠΎΠ΄Π΄Π΅ΡΠΆΠ°Π½ΠΈΠ΅ ΡΠ°ΡΡΠΎΡΡ ΠΌΠ΅Ρ
Π°Π½ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠ΅Π·ΠΎΠ½Π°Π½ΡΠ½ΠΎΠ³ΠΎ ΠΊΠΎΠ»Π΅Π±Π°Π½ΠΈΡ Π±Π΅Π· ΡΡΠ°Π΄ΠΈΡΠΈΠΎΠ½Π½ΠΎ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΠ΅ΠΌΠΎΠ³ΠΎ Π΄Π°ΡΡΠΈΠΊΠ° ΠΊΠΎΠ»Π΅Π±Π°Π½ΠΈΠΉ. ΠΡΠ΅Π΄ΡΡΠΈΠ»ΠΈΡΠ΅Π»Ρ Π²ΡΠΏΠΎΠ»Π½Π΅Π½ Π½Π° Π±Π°Π·Π΅ ΠΎΠΏΠ΅ΡΠ°ΡΠΈΠΎΠ½Π½ΡΡ
ΡΡΠΈΠ»ΠΈΡΠ΅Π»Π΅ΠΉ Ρ ΡΠ΅ΠΌΡΠΎΠ°ΠΌΠΏΠ΅ΡΠ½ΡΠΌΠΈ Π²Ρ
ΠΎΠ΄Π½ΡΠΌΠΈ ΡΠΎΠΊΠ°ΠΌΠΈ. ΠΠΈΡΠ°Π½ΠΈΠ΅ ΠΏΡΠ΅Π΄ΡΡΠΈΠ»ΠΈΡΠ΅Π»Ρ Π²ΡΠΏΠΎΠ»Π½Π΅Π½ΠΎ Ρ Β«ΠΏΠ»Π°Π²Π°ΡΡΠ΅ΠΉ Π·Π΅ΠΌΠ»Π΅ΠΉΒ», ΡΡΠΎ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΡΠΎΡ
ΡΠ°Π½ΠΈΡΡ ΡΠΎΠΎΡΠ½ΠΎΡΠ΅Π½ΠΈΡ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»ΠΎΠ² ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½ΡΠΎΠ² Π·ΠΎΠ½Π΄Π° ΠΏΠΎΡΡΠΎΡΠ½Π½ΡΠΌΠΈ ΠΏΡΠΈ ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΈ Π½Π°ΠΏΡΡΠΆΠ΅Π½ΠΈΡ ΠΊΠΎΠΌΠΏΠ΅Π½ΡΠ°ΡΠΈΠΈ Π² ΡΠΈΡΠΎΠΊΠΎΠΌ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π΅. Π€Π°Π·ΠΎΠ²ΡΠΉ Π΄Π΅ΡΠ΅ΠΊΡΠΎΡ-ΠΈΠ½ΡΠ΅Π³ΡΠ°ΡΠΎΡ Π²ΡΠΏΠΎΠ»Π½Π΅Π½ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΏΡΠΎΡΠΈΠ²ΠΎΡΠ°Π·Π½ΠΎ ΠΊΠΎΠΌΠΌΡΡΠΈΡΡΠ΅ΠΌΡΡ
Ρ ΡΠ°ΡΡΠΎΡΠΎΠΉ ΠΌΠΎΠ΄ΡΠ»ΡΡΠΈΠΈ ΠΊΠΎΠ½ΡΠ°ΠΊΡΠ½ΠΎΠΉ ΡΠ°Π·Π½ΠΎΡΡΠΈ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»ΠΎΠ² ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΡΡ
ΠΊΠ»ΡΡΠ΅ΠΉ ΠΈ ΠΈΠ½ΡΠ΅Π³ΡΠ°ΡΠΎΡΠ°. ΠΠ²ΡΡ
ΠΏΠΎΠ»ΡΠΏΠ΅ΡΠΈΠΎΠ΄Π½ΠΎΠ΅ ΡΠ°Π·ΠΎΠ²ΠΎΠ΅ Π΄Π΅ΡΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ Π² Π·Π½Π°ΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠΉ ΡΡΠ΅ΠΏΠ΅Π½ΠΈ ΠΏΠΎΠ²ΡΡΠΈΡΡ ΡΡΠ²ΡΡΠ²ΠΈΡΠ΅Π»ΡΠ½ΠΎΡΡΡ. ΠΠ»Ρ ΡΠΌΠ΅Π½ΡΡΠ΅Π½ΠΈΡ Π²Π»ΠΈΡΠ½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ°Π³Π½ΠΈΡΠ½ΡΡ
Π½Π°Π²ΠΎΠ΄ΠΎΠΊ ΠΈ ΡΡΠΌΠΎΠ², ΡΡΡΡΠ°Π½Π΅Π½ΠΈΡ ΠΌΠΈΠΊΡΠΎΡΠΎΠ½Π½ΠΎΠ³ΠΎ ΡΡΡΠ΅ΠΊΡΠ° ΠΏΡΠ΅Π΄Π²Π°ΡΠΈΡΠ΅Π»ΡΠ½ΡΠΉ ΡΡΠΈΠ»ΠΈΡΠ΅Π»Ρ Π²ΠΌΠ΅ΡΡΠ΅ Ρ ΡΡΠ°Π»ΠΎΠ½Π½ΡΠΌ ΠΎΠ±ΡΠ°Π·ΡΠΎΠΌ ΡΠΌΠΎΠ½ΡΠΈΡΠΎΠ²Π°Π½ Π½Π° Π³ΠΈΠ±ΠΊΠΎΠΉ ΠΏΠ΅ΡΠ°ΡΠ½ΠΎΠΉ ΠΏΠ»Π°ΡΠ΅, ΠΎΡΠ΄Π΅Π»ΡΠ½ΠΎ ΠΎΡ Π΄ΡΡΠ³ΠΈΡ
ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΡΡ
ΡΠ·Π»ΠΎΠ².
Π£Π½ΠΈΠ²Π΅ΡΡΠ°Π»ΡΠ½ΡΠΉ ΡΠΈΡΡΠΎΠ²ΠΎΠΉ Π·ΠΎΠ½Π΄ΠΎΠ²ΡΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ΅ΡΡ Π΄Π»Ρ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ ΠΏΠ»Π°ΡΡΠΈΠ½
Non-contact electrical methods are widely used for research and control of semiconductor wafers. The methods are usually based on surface potential measurement (CPD) in combination with illumination and/or deposition of charges on the sample using a corona discharge, and are also based on the measurement of surface photo-emf. By photo-EMF (SPV) it is possible to determine the lifetime of minor charge carriers, their diffusion length and detect traces of heavy metals on the surface. In addition, using photo-EMF it is possible to determine the surface resistance of the plate, some parameters of the dielectric layer on the surface and barrier photo-EMF (JPV). Electrical performance results reflect the influence of near-surface characteristics on the final performance of devices. The aim of the work was to develop a universal digital probe electrometer that implements various non-contact electrical methods for analyzing semiconductor wafers, in which the change in operating modes and configuration, transmission of the received data, remote testing and calibration are carried out via digital local control channels. This paper describes a universal digital probe electrometer developed by the authors, which implements the above-described non-contact electrical methods for analyzing semiconductor wafers (CPD, SPV and JPV), in which the change in operating modes and configuration, transmission of the received data, remote testing and calibration are carried out via digital local control channels. Due to their high speed, electrical characterization methods are suitable for inspecting semiconductor wafers during production. The results of testing the developed probe electrometer in CPD, SPV and JPV modes are presented, which reflect the effectiveness of the proposed approaches.ΠΠ»Ρ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΈ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ
ΠΏΠ»Π°ΡΡΠΈΠ½ ΡΠΈΡΠΎΠΊΠΎ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ Π±Π΅ΡΠΊΠΎΠ½ΡΠ°ΠΊΡΠ½ΡΠ΅ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΌΠ΅ΡΠΎΠ΄Ρ, ΠΎΡΠ½ΠΎΠ²Π°Π½Π½ΡΠ΅ Π½Π° ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΠΈ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ (CPD) Π² ΡΠΎΡΠ΅ΡΠ°Π½ΠΈΠΈ Ρ ΠΎΡΠ²Π΅ΡΠ΅Π½ΠΈΠ΅ΠΌ ΠΈ/ΠΈΠ»ΠΈ ΠΎΡΠ°ΠΆΠ΄Π΅Π½ΠΈΠ΅ΠΌ Π·Π°ΡΡΠ΄ΠΎΠ² Π½Π° ΠΎΠ±ΡΠ°Π·Π΅Ρ Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΠΊΠΎΡΠΎΠ½Π½ΠΎΠ³ΠΎ ΡΠ°Π·ΡΡΠ΄Π°, Π° ΡΠ°ΠΊΠΆΠ΅ Π½Π° ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΠΈ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ½ΠΎΠΉ ΡΠΎΡΠΎ-ΠΠΠ‘ (SPV). ΠΠΎ ΡΠΎΡΠΎ-ΠΠΠ‘ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎ ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ ΠΆΠΈΠ·Π½ΠΈ Π½Π΅ΠΎΡΠ½ΠΎΠ²Π½ΡΡ
Π½ΠΎΡΠΈΡΠ΅Π»Π΅ΠΉ Π·Π°ΡΡΠ΄Π°, ΠΈΡ
Π΄ΠΈΡΡΡΠ·ΠΈΠΎΠ½Π½ΡΡ Π΄Π»ΠΈΠ½Ρ ΠΈ ΠΎΠ±Π½Π°ΡΡΠΆΠ΅Π½ΠΈΠ΅ ΡΠ»Π΅Π΄ΠΎΠ² ΡΡΠΆΠ΅Π»ΡΡ
ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ² Π½Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ. ΠΡΠΎΠΌΠ΅ ΡΠΎΠ³ΠΎ, Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ ΡΠΎΡΠΎ-ΠΠΠ‘ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎ ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΡ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΠΎΠΉ ΠΏΠ»Π°ΡΡΠΈΠ½Ρ, Π½Π΅ΠΊΠΎΡΠΎΡΡΠ΅ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΡ ΡΠ»ΠΎΡ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊΠ° Π½Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ ΠΈ Π±Π°ΡΡΠ΅ΡΠ½ΡΡ ΡΠΎΡΠΎ-ΠΠΠ‘ (JPV). Π Π΅Π·ΡΠ»ΡΡΠ°ΡΡ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² ΠΎΡΡΠ°ΠΆΠ°ΡΡ Π²Π»ΠΈΡΠ½ΠΈΠ΅ ΠΏΡΠΈΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ½ΡΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ Π½Π° ΠΊΠΎΠ½Π΅ΡΠ½ΡΠ΅ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΡΡΡΡΠΎΠΉΡΡΠ². Π¦Π΅Π»ΡΡ ΡΠ°Π±ΠΎΡΡ ΡΠ²Π»ΡΠ»Π°ΡΡ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ° ΡΠ½ΠΈΠ²Π΅ΡΡΠ°Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΈΡΡΠΎΠ²ΠΎΠ³ΠΎ Π·ΠΎΠ½Π΄ΠΎΠ²ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ΅ΡΡΠ°, ΡΠ΅Π°Π»ΠΈΠ·ΡΡΡΠ΅Π³ΠΎ ΡΠ°Π·Π»ΠΈΡΠ½ΡΠ΅ Π±Π΅ΡΠΊΠΎΠ½ΡΠ°ΠΊΡΠ½ΡΠ΅ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΌΠ΅ΡΠΎΠ΄Ρ Π°Π½Π°Π»ΠΈΠ·Π° ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ
ΠΏΠ»Π°ΡΡΠΈΠ½, Π² ΠΊΠΎΡΠΎΡΠΎΠΌ ΠΏΠ΅ΡΠ΅Π΄Π°ΡΠ° ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
Π΄Π°Π½Π½ΡΡ
, ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ ΠΊΠΎΠ½ΡΠΈΠ³ΡΡΠ°ΡΠΈΠΈ, ΡΠ΄Π°Π»ΡΠ½Π½ΠΎΠ΅ ΡΠ΅ΡΡΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΠΈ ΠΊΠ°Π»ΠΈΠ±ΡΠΎΠ²ΠΊΠ° ΠΎΡΡΡΠ΅ΡΡΠ²Π»ΡΡΡΡΡ ΠΏΠΎ ΡΠΈΡΡΠΎΠ²ΡΠΌ ΠΊΠ°Π½Π°Π»Π°ΠΌ Π»ΠΎΠΊΠ°Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ. Π ΡΠ°Π±ΠΎΡΠ΅ ΠΎΠΏΠΈΡΠ°Π½ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½ΡΠΉ Π°Π²ΡΠΎΡΠ°ΠΌΠΈ ΡΠ½ΠΈΠ²Π΅ΡΡΠ°Π»ΡΠ½ΡΠΉ ΡΠΈΡΡΠΎΠ²ΠΎΠΉ Π·ΠΎΠ½Π΄ΠΎΠ²ΡΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ΅ΡΡ, ΡΠ΅Π°Π»ΠΈΠ·ΡΡΡΠΈΠΉ ΠΎΠΏΠΈΡΠ°Π½Π½ΡΠ΅ Π²ΡΡΠ΅ Π±Π΅ΡΠΊΠΎΠ½ΡΠ°ΠΊΡΠ½ΡΠ΅ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΌΠ΅ΡΠΎΠ΄Ρ Π°Π½Π°Π»ΠΈΠ·Π° ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ
ΠΏΠ»Π°ΡΡΠΈΠ½ (CPD, SPV ΠΈ JPV). Π£ΠΏΡΠ°Π²Π»Π΅Π½ΠΈΠ΅ ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ΅ΡΡΠΎΠΌ, Π²ΠΊΠ»ΡΡΠ°ΡΡΠ΅Π΅ ΠΏΠ΅ΡΠ΅Π΄Π°ΡΡ ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
Π΄Π°Π½Π½ΡΡ
, ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ ΠΊΠΎΠ½ΡΠΈΠ³ΡΡΠ°ΡΠΈΠΈ, ΡΠ΄Π°Π»ΡΠ½Π½ΠΎΠ΅ ΡΠ΅ΡΡΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΠΈ ΠΊΠ°Π»ΠΈΠ±ΡΠΎΠ²ΠΊΠ°, ΠΎΡΡΡΠ΅ΡΡΠ²Π»ΡΠ΅ΡΡΡ ΠΏΠΎ ΡΠΈΡΡΠΎΠ²ΡΠΌ ΠΊΠ°Π½Π°Π»Π°ΠΌ Π»ΠΎΠΊΠ°Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ. ΠΠ»Π°Π³ΠΎΠ΄Π°ΡΡ Π²ΡΡΠΎΠΊΠΎΠΌΡ Π±ΡΡΡΡΠΎΠ΄Π΅ΠΉΡΡΠ²ΠΈΡ ΠΌΠ΅ΡΠΎΠ΄Ρ ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΠΏΠΎΠ΄Ρ
ΠΎΠ΄ΡΡ Π΄Π»Ρ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ
ΠΏΠ»Π°ΡΡΠΈΠ½ Π² ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ²Π°. ΠΡΠΈΠ²Π΅Π΄Π΅Π½Ρ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ ΡΠ΅ΡΡΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½ΠΎΠ³ΠΎ Π·ΠΎΠ½Π΄ΠΎΠ²ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ΅ΡΡΠ° Π² ΡΠ΅ΠΆΠΈΠΌΠ°Ρ
CPD, SPV ΠΈ JPV, ΠΎΡΡΠ°ΠΆΠ°ΡΡΠΈΠ΅ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π½ΡΡ
ΠΏΠΎΠ΄Ρ
ΠΎΠ΄ΠΎΠ²
ΠΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΠΉ ΡΠ΅Π½ΡΠΎΡ Π΄Π»Ρ ΠΈΠ·ΠΌΠ΅ΡΠΈΡΠ΅Π»ΡΠ½ΡΡ ΡΠΈΡΡΠ΅ΠΌ, ΡΠ°Π±ΠΎΡΠ°ΡΡΠΈΡ ΠΏΠΎ ΡΡ Π΅ΠΌΠ΅ ΡΠΈΠ½ΡΡΠΎΠΈΠ΄Π°Π»ΡΠ½ΠΎΠ΅ Π²ΠΎΠ·Π±ΡΠΆΠ΄Π΅Π½ΠΈΠ΅ β ΠΎΡΠΊΠ»ΠΈΠΊ
Measuring devices and systems containing sensors that require sinusoidal excitation are widely used in information and measurement technology both in production conditions and in research practice. Examples include various types of metal detectors, eddy current flaw detectors, analyzers of liquid media, electrometers with a dynamic capacitor, etc. The aim of the work was to develop the optimal architecture and algorithms for the operation of intelligent sensors intended for use in measuring systems operating according to the sinusoidal excitation β response scheme.This paper describes the approach proposed by the authors to the construction of intelligent sensors based on modern microcontrollers, the distinctive feature of which is the continuous generation of sinusoidal excitation and reading responses in the background, as well as setting the readiness flags for data processing in the main process of the microprocessor, which ensures uninterrupted execution of background processes, the main of which is the generation of a sinusoidal excitatory action.This approach has been tested in the development of charge-sensitive surface mapping systems, such as the Kelvin probe based on a vibrating capacitor, and the surface photo voltage probe for the case of semiconductors.ΠΠ·ΠΌΠ΅ΡΠΈΡΠ΅Π»ΡΠ½ΡΠ΅ ΠΏΡΠΈΠ±ΠΎΡΡ ΠΈ ΡΠΈΡΡΠ΅ΠΌΡ, ΡΠΎΠ΄Π΅ΡΠΆΠ°ΡΠΈΠ΅ Π΄Π°ΡΡΠΈΠΊΠΈ, ΡΡΠ΅Π±ΡΡΡΠΈΠ΅ ΡΠΈΠ½ΡΡΠΎΠΈΠ΄Π°Π»ΡΠ½ΠΎΠ΅ Π²ΠΎΠ·Π±ΡΠΆΠ΄Π°ΡΡΠ΅Π΅ Π²ΠΎΠ·Π΄Π΅ΠΉΡΡΠ²ΠΈΠ΅, ΡΠΈΡΠΎΠΊΠΎ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ Π² ΠΈΠ½ΡΠΎΡΠΌΠ°ΡΠΈΠΎΠ½Π½ΠΎ-ΠΈΠ·ΠΌΠ΅ΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠΉ ΡΠ΅Ρ
Π½ΠΈΠΊΠ΅ ΠΊΠ°ΠΊ Π² ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ²Π΅Π½Π½ΡΡ
ΡΡΠ»ΠΎΠ²ΠΈΡΡ
, ΡΠ°ΠΊ ΠΈ Π² ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°ΡΠ΅Π»ΡΡΠΊΠΎΠΉ ΠΏΡΠ°ΠΊΡΠΈΠΊΠ΅. Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΠΏΡΠΈΠΌΠ΅ΡΠΎΠ² ΠΌΠΎΠΆΠ½ΠΎ ΠΏΡΠΈΠ²Π΅ΡΡΠΈ ΡΠ°Π·Π»ΠΈΡΠ½ΡΠ΅ ΡΠΈΠΏΡ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠΈΡΠΊΠ°ΡΠ΅Π»Π΅ΠΉ, Π²ΠΈΡ
ΡΠ΅ΡΠΎΠΊΠΎΠ²ΡΠ΅ Π΄Π΅ΡΠ΅ΠΊΡΠΎΡΠΊΠΎΠΏΡ, Π°Π½Π°Π»ΠΈΠ·Π°ΡΠΎΡΡ ΠΆΠΈΠ΄ΠΊΠΈΡ
ΡΡΠ΅Π΄, ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ΅ΡΡΡ Ρ Π΄ΠΈΠ½Π°ΠΌΠΈΡΠ΅ΡΠΊΠΈΠΌ ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡΠΎΠΌ ΠΈ Π΄Ρ. Π¦Π΅Π»ΡΡ ΡΠ°Π±ΠΎΡΡ ΡΠ²Π»ΡΠ»Π°ΡΡ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ° ΠΎΠΏΡΠΈΠΌΠ°Π»ΡΠ½ΠΎΠΉ Π°ΡΡ
ΠΈΡΠ΅ΠΊΡΡΡΡ ΠΈ Π°Π»Π³ΠΎΡΠΈΡΠΌΠΎΠ² ΡΠ°Π±ΠΎΡΡ ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
ΡΠ΅Π½ΡΠΎΡΠΎΠ², ΠΏΡΠ΅Π΄Π½Π°Π·Π½Π°ΡΠ΅Π½Π½ΡΡ
Π΄Π»Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΡ Π² ΠΈΠ·ΠΌΠ΅ΡΠΈΡΠ΅Π»ΡΠ½ΡΡ
ΡΠΈΡΡΠ΅ΠΌΠ°Ρ
, ΡΠ°Π±ΠΎΡΠ°ΡΡΠΈΡ
ΠΏΠΎ ΡΡ
Π΅ΠΌΠ΅ ΡΠΈΠ½ΡΡΠΎΠΈΠ΄Π°Π»ΡΠ½ΠΎΠ΅ Π²ΠΎΠ·Π±ΡΠΆΠ΄Π΅Π½ΠΈΠ΅ β ΠΎΡΠΊΠ»ΠΈΠΊ.Π Π½Π°ΡΡΠΎΡΡΠ΅ΠΉ ΡΠ°Π±ΠΎΡΠ΅ ΠΎΠΏΠΈΡΠ°Π½ ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π½ΡΠΉ Π°Π²ΡΠΎΡΠ°ΠΌΠΈ ΠΏΠΎΠ΄Ρ
ΠΎΠ΄ ΠΊ ΠΏΠΎΡΡΡΠΎΠ΅Π½ΠΈΡ ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
ΡΠ΅Π½ΡΠΎΡΠΎΠ² Π½Π° Π±Π°Π·Π΅ ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΡΡ
ΠΌΠΈΠΊΡΠΎΠΊΠΎΠ½ΡΡΠΎΠ»Π»Π΅ΡΠΎΠ², ΠΎΡΠ»ΠΈΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠΉ ΠΎΡΠΎΠ±Π΅Π½Π½ΠΎΡΡΡΡ ΠΊΠΎΡΠΎΡΠΎΠ³ΠΎ ΡΠ²Π»ΡΠ΅ΡΡΡ Π½Π΅ΠΏΡΠ΅ΡΡΠ²Π½Π°Ρ Π³Π΅Π½Π΅ΡΠ°ΡΠΈΡ ΡΠΈΠ½ΡΡΠΎΠΈΠ΄Π°Π»ΡΠ½ΡΡ
Π²ΠΎΠ·Π΄Π΅ΠΉΡΡΠ²ΠΈΠΉ ΠΈ ΡΡΠΈΡΡΠ²Π°Π½ΠΈΠ΅ ΠΎΡΠΊΠ»ΠΈΠΊΠΎΠ² Π² ΡΠΎΠ½ΠΎΠ²ΠΎΠΌ ΡΠ΅ΠΆΠΈΠΌΠ΅, Π° ΡΠ°ΠΊΠΆΠ΅ Π²ΡΡΡΠ°Π²Π»Π΅Π½ΠΈΠ΅ ΡΠ»Π°Π³ΠΎΠ² Π³ΠΎΡΠΎΠ²Π½ΠΎΡΡΠΈ Π΄Π»Ρ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ Π΄Π°Π½Π½ΡΡ
Π² ΠΎΡΠ½ΠΎΠ²Π½ΠΎΠΌ ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΌΠΈΠΊΡΠΎΠΏΡΠΎΡΠ΅ΡΡΠΎΡΠ°, ΡΡΠΎ ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠΈΠ²Π°Π΅Ρ Π±Π΅ΡΠΏΠ΅ΡΠ΅Π±ΠΎΠΉΠ½ΠΎΠ΅ Π²ΡΠΏΠΎΠ»Π½Π΅Π½ΠΈΠ΅ ΡΠΎΠ½ΠΎΠ²ΡΡ
ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ², Π³Π»Π°Π²Π½ΡΠΌ ΠΈΠ· ΠΊΠΎΡΠΎΡΡΡ
ΡΠ²Π»ΡΠ΅ΡΡΡ Π³Π΅Π½Π΅ΡΠ°ΡΠΈΡ ΡΠΈΠ½ΡΡΠΎΠΈΠ΄Π°Π»ΡΠ½ΠΎΠ³ΠΎ Π²ΠΎΠ·Π±ΡΠΆΠ΄Π°ΡΡΠ΅Π³ΠΎ Π²ΠΎΠ·Π΄Π΅ΠΉΡΡΠ²ΠΈΡ.ΠΠ°Π½Π½ΡΠΉ ΠΏΠΎΠ΄Ρ
ΠΎΠ΄ ΠΎΠΏΡΠΎΠ±ΠΎΠ²Π°Π½ ΠΏΡΠΈ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ΅ ΡΠΈΡΡΠ΅ΠΌ ΠΊΠ°ΡΡΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ΅ΠΉ Π·Π°ΡΡΠ΄ΠΎΡΡΠ²ΡΡΠ²ΠΈΡΠ΅Π»ΡΠ½ΡΠΌΠΈ ΠΌΠ΅ΡΠΎΠ΄Π°ΠΌΠΈ, ΡΠ°ΠΊΠΈΠΌΠΈ ΠΊΠ°ΠΊ Π·ΠΎΠ½Π΄ ΠΠ΅Π»ΡΠ²ΠΈΠ½Π°, Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ Π΄ΠΈΠ½Π°ΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°ΡΠΎΡΠ°, ΠΈ Π·ΠΎΠ½Π΄ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ½ΠΎΠΉ ΡΠΎΡΠΎ-ΠΠΠ‘ Π΄Π»Ρ ΡΠ»ΡΡΠ°Ρ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²
ΠΠ°ΡΡΠ΄ΠΎΡΡΠ²ΡΡΠ²ΠΈΡΠ΅Π»ΡΠ½ΡΠΉ ΠΌΠ΅ΡΠΎΠ΄ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ Π΄Π΅ΡΠΎΡΠΌΠ°ΡΠΈΠΎΠ½Π½ΡΡ ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ²
Surface charge can be used as an information parameter about the change in the state of the material under the action of mechanical stresses. The aim of the work was to develop methods for studying deformation processes in metallic and polymeric materials using a charge-sensitive method.Experimental studies of deformation processes under tensile, compressive and impact loads were carried out on samples of various materials: aluminum alloy of AMg2 grade, steel of grade 08PS, high-pressure polyethylene of grade 12203-250 and samples of composite materials based on it, F4 polytetrafluoroethylene. As a research method, the analysis of changes in the relative values of the surface electron work function in the case of metals and the surface electrostatic potential in the case of polymers and composite materials is used. A scanning modification of a charge-sensitive probe is used as a measuring instrument.The results of experimental studies of materials in a stress-strain state demonstrate the high efficiency of the proposed method. The research methodology makes it possible to detect local changes in the surface potential of the material in the area of deformations, which are not detected on a macroscopic scale using standard methods. The results obtained can serve as a basis for the development of new methods and techniques for studying the mechanical properties of both metals and dielectric materials.Β Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΠΈΠ½ΡΠΎΡΠΌΠ°ΡΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠ° ΠΎΠ± ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΈ ΡΠΎΡΡΠΎΡΠ½ΠΈΡ ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»Π° ΠΏΠΎΠ΄ Π΄Π΅ΠΉΡΡΠ²ΠΈΠ΅ΠΌ ΠΌΠ΅Ρ
Π°Π½ΠΈΡΠ΅ΡΠΊΠΈΡ
Π½Π°ΠΏΡΡΠΆΠ΅Π½ΠΈΠΉ ΠΌΠΎΠΆΠ΅Ρ Π±ΡΡΡ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ½ΡΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΡΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΈΠΉ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π» (Π·Π°ΡΡΠ΄). Π¦Π΅Π»ΡΡ ΡΠ°Π±ΠΎΡΡ ΡΠ²Π»ΡΠ»Π°ΡΡ ΠΎΡΡΠ°Π±ΠΎΡΠΊΠ° ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ Π΄Π΅ΡΠΎΡΠΌΠ°ΡΠΈΠΎΠ½Π½ΡΡ
ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ² Π² ΠΌΠ΅ΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈ ΠΏΠΎΠ»ΠΈΠΌΠ΅ΡΠ½ΡΡ
ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»Π°Ρ
Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ Π·Π°ΡΡΠ΄ΠΎΡΡΠ²ΡΡΠ²ΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΠΌΠ΅ΡΠΎΠ΄Π°.ΠΡΠΎΠ²Π΅Π΄Π΅Π½Ρ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΠ΅ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ Π΄Π΅ΡΠΎΡΠΌΠ°ΡΠΈΠΎΠ½Π½ΡΡ
ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ² ΠΏΡΠΈ ΡΠ°ΡΡΡΠ³ΠΈΠ²Π°ΡΡΠΈΡ
, ΡΠΆΠΈΠΌΠ°ΡΡΠΈΡ
ΠΈ ΡΠ΄Π°ΡΠ½ΡΡ
Π½Π°Π³ΡΡΠ·ΠΊΠ°Ρ
Π½Π° ΠΎΠ±ΡΠ°Π·ΡΠ°Ρ
ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ²: Π°Π»ΡΠΌΠΈΠ½ΠΈΠ΅Π²ΡΠΉ ΡΠΏΠ»Π°Π² ΠΌΠ°ΡΠΊΠΈ ΠΠΠ³2, ΡΡΠ°Π»Ρ ΠΌΠ°ΡΠΊΠΈ 08ΠΠ‘, ΠΏΠΎΠ»ΠΈΡΡΠΈΠ»Π΅Π½ Π²ΡΡΠΎΠΊΠΎΠ³ΠΎ Π΄Π°Π²Π»Π΅Π½ΠΈΡ ΠΌΠ°ΡΠΊΠΈ 12203-250 ΠΈ ΠΎΠ±ΡΠ°Π·ΡΡ ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡΠΈΠΎΠ½Π½ΡΡ
ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ² Π½Π° Π΅Π³ΠΎ ΠΎΡΠ½ΠΎΠ²Π΅, ΡΡΠΎΡΠΎΠΏΠ»Π°ΡΡ-4. Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΠΌΠ΅ΡΠΎΠ΄Π° ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠΉ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π»ΡΡ Π°Π½Π°Π»ΠΈΠ· ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΉ ΠΎΡΠ½ΠΎΡΠΈΡΠ΅Π»ΡΠ½ΡΡ
Π·Π½Π°ΡΠ΅Π½ΠΈΠΉ ΡΠ°Π±ΠΎΡΡ Π²ΡΡ
ΠΎΠ΄Π° ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ Π² ΡΠ»ΡΡΠ°Π΅ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ² ΠΈ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΎΡΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»Π° Π² ΡΠ»ΡΡΠ°Π΅ ΠΌΠ°ΡΡΠΈΡΠ½ΡΡ
ΠΈ ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡΠΈΠΎΠ½Π½ΡΡ
ΠΏΠΎΠ»ΠΈΠΌΠ΅ΡΠ½ΡΡ
ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ². Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΡΡΠ΅Π΄ΡΡΠ² ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΠΉ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π»Π°ΡΡ ΡΠΊΠ°Π½ΠΈΡΡΡΡΠ°Ρ ΠΌΠΎΠ΄ΠΈΡΠΈΠΊΠ°ΡΠΈΡ Π·Π°ΡΡΠ΄ΠΎΡΡΠ²ΡΡΠ²ΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ Π·ΠΎΠ½Π΄Π°.Π Π΅Π·ΡΠ»ΡΡΠ°ΡΡ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΡ
ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠΉ ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ² Π² Π½Π°ΠΏΡΡΠΆΡΠ½Π½ΠΎ-Π΄Π΅ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠΌ ΡΠΎΡΡΠΎΡΠ½ΠΈΠΈ Π΄Π΅ΠΌΠΎΠ½ΡΡΡΠΈΡΡΡΡ Π²ΡΡΠΎΠΊΡΡ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π½ΠΎΠ³ΠΎ ΠΌΠ΅ΡΠΎΠ΄Π°. ΠΠ΅ΡΠΎΠ΄ΠΈΠΊΠ° ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠΉ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΠΎΠ±Π½Π°ΡΡΠΆΠΈΠ²Π°ΡΡ Π»ΠΎΠΊΠ°Π»ΡΠ½ΡΠ΅ ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΡ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ½ΠΎΠ³ΠΎ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»Π° ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»Π° Π² ΠΎΠ±Π»Π°ΡΡΠΈ Π΄Π΅ΠΉΡΡΠ²ΠΈΡ Π΄Π΅ΡΠΎΡΠΌΠ°ΡΠΈΠΉ, ΠΊΠΎΡΠΎΡΡΠ΅ Π½Π΅ ΠΎΠ±Π½Π°ΡΡΠΆΠΈΠ²Π°ΡΡΡΡ Π² ΠΌΠ°ΠΊΡΠΎΡΠΊΠΎΠΏΠΈΡΠ΅ΡΠΊΠΎΠΌ ΠΌΠ°ΡΡΡΠ°Π±Π΅ Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ ΡΡΠ°Π½Π΄Π°ΡΡΠ½ΡΡ
ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ². ΠΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ ΠΌΠΎΠ³ΡΡ ΡΠ»ΡΠΆΠΈΡΡ Π±Π°Π·ΠΎΠΉ Π΄Π»Ρ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠΈ Π½ΠΎΠ²ΡΡ
ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ² ΠΈ ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΌΠ΅Ρ
Π°Π½ΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ² ΠΊΠ°ΠΊ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ², ΡΠ°ΠΊ ΠΈ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΠΎΠ²
ΠΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΠ΅ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»Π° ΠΏΠΎΠ²Π΅ΡΡ Π½ΠΎΡΡΠΈ Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ ΡΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ Π·ΠΎΠ½Π΄Π°
Surface electric potential measurements are widely used in non-destructive inspection and testing of precision surfaces, for example, in the production of semiconductor devices and integrated circuits. Features of the construction and application of devices for measuring the surface electric potential using an immovable reference electrode are considered. Despite the need to increase the area of the probe compared to devices with a vibrating probe, measurement techniques with an immovable probe have a number of advantages and could expand the scope of surface electric potential measurements in the inspection of samples with precise surfaces. Models of the formation of a measuring signal in the presence of a spatial inhomogeneity of surface electric potential are presented and discussed.ΠΠ΅ΡΠΎΠ΄Ρ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΉ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ ΡΠΈΡΠΎΠΊΠΎ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ Π² ΠΎΠΏΠ΅ΡΠ°ΡΠΈΡΡ
Π½Π΅ΡΠ°Π·ΡΡΡΠ°ΡΡΠ΅Π³ΠΎ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΏΡΠ΅ΡΠΈΠ·ΠΈΠΎΠ½Π½ΡΡ
ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ΅ΠΉ, Π½Π°ΠΏΡΠΈΠΌΠ΅Ρ, Π² ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠΉ ΠΏΡΠΎΠΌΡΡΠ»Π΅Π½Π½ΠΎΡΡΠΈ Π² ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½ΠΈΡ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ
ΠΏΡΠΈΠ±ΠΎΡΠΎΠ². Π¦Π΅Π»ΡΡ ΡΠ°Π±ΠΎΡΡ ΡΠ²Π»ΡΠ΅ΡΡΡ ΡΠ°ΡΡΠΈΡΠ΅Π½ΠΈΠ΅ ΠΎΠ±Π»Π°ΡΡΠΈ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΡ ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊ Π±Π΅ΡΠΊΠΎΠ½ΡΠ°ΠΊΡΠ½ΠΎΠ³ΠΎ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΈ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΡ ΡΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΎΡΡΡΡΡΠ½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΎΠ΄Π°.Π Π°ΡΡΠΌΠΎΡΡΠ΅Π½Ρ ΠΎΡΠΎΠ±Π΅Π½Π½ΠΎΡΡΠΈ ΠΏΠΎΡΡΡΠΎΠ΅Π½ΠΈΡ ΠΈ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΡ ΡΡΡΡΠΎΠΉΡΡΠ² ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ Π½Π΅ΠΏΠΎΠ΄Π²ΠΈΠΆΠ½ΠΎΠ³ΠΎ ΠΎΡΡΡΡΡΠ½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΎΠ΄Π°. ΠΠ΅ΡΠΌΠΎΡΡΡ Π½Π° Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΠΎΡΡΡ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΡ ΠΏΠ»ΠΎΡΠ°Π΄ΠΈ Π·ΠΎΠ½Π΄Π° ΠΏΠΎ ΡΡΠ°Π²Π½Π΅Π½ΠΈΡ Ρ ΡΡΡΡΠΎΠΉΡΡΠ²Π°ΠΌΠΈ, ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΠΈΠΌΠΈ Π²ΠΈΠ±ΡΠΈΡΡΡΡΠΈΠΉ Π·ΠΎΠ½Π΄, ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊΠΈ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ Ρ Π½Π΅ΠΏΠΎΠ΄Π²ΠΈΠΆΠ½ΡΠΌ Π·ΠΎΠ½Π΄ΠΎΠΌ ΠΈΠΌΠ΅ΡΡ ΡΡΠ΄ ΠΏΡΠ΅ΠΈΠΌΡΡΠ΅ΡΡΠ² ΠΈ ΡΠ°ΡΡΠΈΡΡΡΡ ΠΎΠ±Π»Π°ΡΡΡ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΡ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΠΉ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ Π² ΠΊΠΎΠ½ΡΡΠΎΠ»Π΅ ΠΈΠ·Π΄Π΅Π»ΠΈΠΉ Ρ ΠΏΡΠ΅ΡΠΈΠ·ΠΈΠΎΠ½Π½ΡΠΌΠΈ ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΡΠΌΠΈ. ΠΡΠΈΠ²Π΅Π΄Π΅Π½Ρ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΈΠ·ΠΌΠ΅ΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΈΠ³Π½Π°-Π»Π° ΠΏΡΠΈ Π½Π°Π»ΠΈΡΠΈΠΈ ΠΏΡΠΎΡΡΡΠ°Π½ΡΡΠ²Π΅Π½Π½ΠΎΠΉ Π½Π΅ΠΎΠ΄Π½ΠΎΡΠΎΠ΄Π½ΠΎΡΡΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ.