A study of the ferromagnetic transition of SrRuO3SrRuO_3 in nanometer thick bilayers with YBa2Cu3OyYBa_2Cu_3O_y, La1.88Sr0.12CuO4−yLa_{1.88}Sr_{0.12}CuO_{4-y}, Au and Cr: Signature of injected carriers in the pseudogap regime

The hypothesis regarding the existence of uncorrelated pre-formed pairs in the pseudogap regime of superconducting $YBa_2Cu_3O_y$ is tested experimentally using bilayers of $YBa_2Cu_3O_y$ and the itinerant ferromagnet $SrRuO_3$. In our study, we monitor the influence of $YBa_2Cu_3O_y$ on $T_p$, the ferromagnetic ordering temperature of $SrRuO_3$. Here, $T_p$ is the temperature of maximum dM/dT or dR/dT where M and R are the magnetization and resistance of $SrRuO_3$, respectively. We compare the results with similar measurements carried out on bilayers of $La_{1.88}Sr_{0.12}CuO_{4-y}$, $Au$ and $Cr$ with $SrRuO_3$. We find that in bilayers made of underdoped 10 nm $YBa_2Cu_3O_y$/5 nm $SrRuO_3$, the $T_p$ values are shifted to lower temperatures by up to 6-8 K as compared to $T_p\approx 140$ K of the 5 nm thick reference $SrRuO_3$ film. In contrast, in the other type of bilayers, which are not in the pseudogap regime near $T_p$, only a smaller shift of up to $\pm$2 K is observed. These differences are discussed in terms of a proximity effect, where carriers from the $YBa_2Cu_3O_y$ layer are injected into the $SrRuO_3$ layer and vice versa. We suggest that correlated electrons in the pseudogap regime of $YBa_2Cu_3O_y$ are responsible for the observed large $T_p$ shifts.Comment: 9 figure

Mode stabilized terrace InGaAsP lasers on semi-insulating InP

Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion. Two versions of the terrace lasers are fabricated, and threshold currents as low as 35 mA and 50 mA respectively are obtained. The lasers operate with a stable single lateral mode. High power performance is observed. These lasers are suitable for monolithic integration with other optoelectronic devices

Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration

Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed with mirrors fabricated by the microcleavage technique. Miniature suspended bridges containing the laser channels have been formed and then microcleavage has been accomplished by the use of ultrasonic vibrations. Lasers with current thresholds as low as 18 mA with 140-µm cavity length and with 35–45% differential quantum efficiency have been obtained

Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP

Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300-µm cavity length are obtained. MIS depletion mode FET's with n channels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current

Direct measurement of the carrier leakage in an InGaAsP/InP laser

Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions

Low threshold InGaAsP terrace mass transport laser on semi-insulating substrate

Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated using the mass transport technique. The fabrication process involves a single-step liquid phase epitaxial (LPE) growth followed by a mass transport of InP at ~675 °C in the presence of an InP cover wafer. Lasers operating in the fundamental transverse mode with smooth far-field patterns and threshold currents as low as 9.5 mA have been obtained

Very low threshold InGaAsP mesa laser

Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described

InGaAsP/InP undercut mesa laser with planar polyimide passivation

An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer. The lasers operate at fundamental transverse mode due to a scattering loss mechanism. Threshold currents of 18 mA and stable single transverse mode operating at high currents are obtained