Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5 Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In

Injection photodetectors operating in a wide spectral range

New types of injection photodetectors are shown. The primary amplification of photocurrent in injection photodetectors is discussed. The photosensitivity of such photodetectors has been experimentally determined

Multicolor nonlinear pulse compression by consecutive optical parametric amplification in quasi-phase matched structures

Simultaneous generation of the 2nd and 3rd harmonic, excited by linearly frequency- chirped fundamental pulse in quasiphase matched grating with linearly varying inverse domain sizes has been studied numerically with taking into account effects of the group velocity mismatches and dispersions. Mechanisms of efficient nonlinear pulse compressions and conversion efficiencies of the generated harmonics have been analyzed

To examine the processes of biochemical action of cobalate ii-nitrate and quinazolin-4-on on the “Morus alba” variety of Moraceae plant of the coordination compound formed by 3-indole fatty acid

In the article, the synthesis of quinazolin-4-on, the reaction of its interaction with indole fatty acid and the synthesis of the coordination compound formed by cobalt (II)-nitrate, the biochemical action of the mulberry plant on the “morus alba” variety of the moraceae plant with the participation of various solvents, the development of root system, photosynthesis in the leaves, and methods

Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5 Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In