Optical and electrical properties of indium tin oxide thin films sputter-deposited in working gas containing hydrogen without heat treatments

Polycrystalline thin films of indium tin oxide sputter-deposited in the working gas containing hydrogen of 0.3–1.5% exhibited transmittance of ≥ 80% for visible lights and blue-shift of ≥ 0.1 eV in the optical absorption energy. The film deposited in the gas containing hydrogen of 1% demonstrated almost flat temperature-dependent resistivity and the lowest resistivity of ≈ 1.5 × 10− 4 Ω cm at room temperature. The carrier density showed an inverse V-shaped behavior with the maximum at the hydrogen concentration of 1%. The mobility stayed at almost constant below the hydrogen concentration of 1% and dropped rather rapidly above 1%

Synthesis and Magnetic Properties of Fergusonite Structured La(NbVMn)O4

The authors have synthesized fergusonite-structured La(Nb0·71V0·04Mn0·25)O4 samples. The samples, consisting of La3+, Nb5+, V5+, Mn4+ and oxygen ions, demonstrated temperature-dependent magnetization that increased with lowering the temperature below ≈200 K, and almost saturated below ≈100 K. At 75 K, the field-dependent magnetization demonstrated sigmoidal curve and reached 3 μB/Mn at 1 T. Such a magnetic behavior can be ascribed to exchange interaction between Mn4+Nb2O11 nanoclusters. The Mn4+ substitution for the V5+ sites of the crystal resulted also in the occupied state above the valence band maximum