Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5$\times10^{11}$cm$^{-2}$ to 4.5$\times10^{11}$cm$^{-2}$, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the SiO$_2$ dielectric formed by plasma-enhanced chemical-vapor-deposition(PECVD).Comment: 3 pages Revtex4, 4 figure

Microwave resonance of the reentrant insulating quantum Hall phases in the 1st excited Landau Level

We present measurements of the real diagonal microwave conductivity of the reentrant insulating quantum Hall phases in the first excited Landau level at temperatures below 50 mK. A resonance is detected around filling factor $\nu=2.58$ and weaker frequency dependence is seen at $\nu=2.42$ and 2.28. These measurements are consistent with the formation of a bubble phase crystal centered around these $\nu$ at very low temperatures

Microwave resonances of the bubble phases in 1/4 and 3/4 filled higher Landau levels

We have measured the diagonal conductivity in the microwave regime of an ultrahigh mobility two dimensional electron system. We find a sharp resonance in Re[sigma_{xx}] versus frequency when nu > 4 and the partial filling of the highest Landau level, nu^*, is ~ 1/4 or 3/4 and temperatures < 0.1 K. The resonance appears for a range of nu^* from 0.20 to 0.37 and again from 0.62 to 0.82. the peak frequency, f_{pk} changes from ~ 500 to ~ 150 as nu^* = 1/2 is approached. This range of f_{pk} shows no dependence on nu where the resonance is observed. The quality factor, Q, of the resonance is maximum at ~ nu^* = 0.25 and 0.74. We interpret the resonance as due to a pinning mode of the bubble phase crystal.Comment: revtex 4, 3 figures, minor corrections made. Accepted by pr

sPDZD2: a novel negative modulator of hedgehog signaling

Poster Presentation - Theme 3: Development & stem cellsPDZD2 is a multi-PDZ domain-containing protein of unknown function in early development. It is proteolytically cleaved to generate its secreted form, sPDZD2. Human PDZD2 is mapped to chromosome 5p13.2, which co-localizes with the disease-associated gene in a family of Brachydactyly Type A1 (BDA1) patients, suggesting involvement of PDZD2 in limb development. Hedgehog (Hh) is an important morphogen that dictates tissue patterning during embryonic development and recent studies showed that mutations in Indian Hedgehog (IHH) resulted in ...postprin