Reversible phase transformation in the Pd2Si-PdSi thin-film system

The thermal stability of thin PdSi films has been studied at temperatures ranging between 300 and 700 °C. The PdSi, when in contact with crystalline Si, transforms into Pd2Si and Si at temperatures of 500–700 °C, a process contrary to the equilibrium-phase diagram. The rate of transformation was found to depend on the structure and orientation of the Si. Upon heating above 750 °C, Pd2Si transforms back to PdSi. However, PdSi is stable against annealing when in contact with Pd2Si or an inert substrate SiO2. We propose that the decomposition of PdSi into Pd2Si and Si in the presence of crystalline Si is due to a lower interface energy of the Pd2Si-Si interface compared to that of the PdSi-Si interface

Influence of atomic mixing and preferential sputtering on depth profiles and interfaces

Atomic mixing and preferential sputtering impose a depth resolution limit on the use of sputter sectioning to measure the composition of metal–semiconductor interfaces. Experimental evidence obtained with the Pt–Si system is used to demonstrate ion‐induced atomic mixing and then its effect on sputter etching and depth profiling. Starting with discrete layer structures, a relatively low ion dose (≳3×10^(15) cm^(−2)) first produced a mixed surface layer with thickness comparable to the ion range. Higher ion doses then result in successive sputter etching and continual atomic mixing over a constant surface layer thickness. A model is developed that is based on a sputter removal (including preferential sputtering) of atoms at the surface and a uniform mixing of atoms over a constant thickness. The model predicts the influences of atomic mixing and preferential sputtering on the depth profiling of thin‐film structures and interfaces

Sequence of phase formation in planar metal-Si reaction couples

A correlation is found between the sequence of phase formation in thin-film metal-Si interactions and the bulk equilibrium phase diagram. After formation of the first silicide phase, which generally follows the rule proposed by Walser and Bené, the next phase formed at the interface between the first phase and the remaining element (Si or metal) is the nearest congruently melting compound richer in the unreacted element. If the compounds between the first phase and the remaining element are all noncongruently melting compounds (such as peritectic or peritectoid phases), the next phase formed is that with the smallest temperature difference between the liquidus curve and the peritectic (or peritectoid) point

Depth dependence of atomic mixing by ion beams

Ion backscattering spectrometry has been used to investigate the depth dependence of atomic mixing induced by ion beams. Samples consisting of a thin Pt (or Si) marker a few tens of angstroms thick buried at different depths in a deposited Si (or Pt) layer were bombarded with Xe+ of 300 keV at 2×10^16 cm^–2 dose and Ar+ of 150 keV at 5×10^15cm^–2 dose. Significant spreading of the marker was observed as a result of ion irradiation. The amount of spreading was measured as a function of depth of the marker, which was then compared with the deposited energy distribution. Measurements of this kind promise new insight into the nature of the interaction between ion beams and solids