Formation of Porous n−A3B5n-A_3B_5 Compounds

Porous layers of $A_3B_5$ compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area $(1.5×1.5 cm^2)$ porous layers of uniform porosity were produced by anodization process of n-type $A_3B_5$ semiconductors

Electrochemical Formation and Microstructure of Porous Gallium Phosphide

Electrochemical formation and microstructure of porous GaP have been investigated. Nanostructured porous GaP layers of thickness up to ≈ 20 μm were fabricated on n-type (111)-oriented crystalline c-GaP substrates. Studies of microstructure of porous GaP in dependence on electrolyte type and regimes of technological procedure have been carried out by scanning electron microscopy. The samples were characterized by spectroscopic ellipsometry in visible and near UV spectral range. The investigations have shown that the structure and optical response of porous GaP can be efficiently controlled by technological procedure of electrochemical formation. The shape and dimension of pores can be varied from nanometer-scaled cylindrical pores to GaP nanorods

Spectroscopic Ellipsometry of Porphyrin Adsorbed in Porous Silicon

Aqueous solution of meso-tetra(4-sulfonatophenyl)porphine was deposited on electrochemically etched n-Si wafers. The morphology of the hybrid systems was investigated by scanning electron microscope and atomic force microscope techniques. The optical response of the hybrid systems was studied by spectroscopic ellipsometry in the range of 1-5 eV. Particular features in adsorption process were revealed for meso-tetra(4-sulfonatophenyl)porphine deposited on variously chemically treated Si substrates. It was found that porphyrin J-aggregates can be intercalated into large pores formed in a bulk n-Si as well as into nanopores of luminescent oxide layer