Pi-Molecular dielectric layer for organic thin film diode

Very thin (1.2-2.5nm) self-assembled organic dielectric monolayers have been integrated into organic thin-film diode to achieve electrical characteristics. These dielectrics are fabricated by self-assembling deposition, resulting in smooth, strongly adherent, thermally stable, organosiloxane thin films having interesting electrical capacitances (around 150 nF cm-2 at -3V) and insulating properties (leakage current densities around 10-5 A cm2 at -1V).Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Electrical Characterisation of Ultra-thin SAM Structures

The way of reduction of metal oxyde semiconductor (MOS) structures is going to reach limitations and new devices have to be explored as an alternative to MOS technology. Molecular electronic and more particularly self-assembly-molecular technique on silicon substrate gives interesting results as seen in the literature. We are going to study n-alkyltrichlorosilane grafting on oxidised silicon, characterise it macroscopically with ellipsometer and goniometry measurements, and down to microscopic scale with atomic force microscopy. Once the uniformity of the monolayer is verified (roughness of few Angstr\"oms) we have tested a sputtering method deposition to form aluminium dots onto the surface. Also metal-insulator-semiconductor diodes are tested measuring both leakage current between gate and substrate and capacitance-voltage. The sputtering method deposition can be improved in order to decrease the gate leakage current and we would like to test another evaporation method. Further application we want to study is gas sensors using conjugated organic films or synthetic polymers and concerns the drift current with gas absorption.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides

International audienceThe impact of hot electrons on gate oxide degradation is studied by investigating devices under constant voltage stress and substrate hot electron injection in thin silicon dioxide (2.5–1.5 nm). The build-up defects measured using low voltage stress induced leakage current is reported. Based on these results, we propose to extract the critical parameter of the degradation under simultaneous tunneling and substrate hot-electron stress. During a constant voltage stress the oxide field, the injected charge and the energy of carriers are imposed by VG and cannot be studied independently. Substrate hot electron injection allows controlling the current density independent of the substrate bias and oxide voltage. The results provide an understanding for describing the reliability and the parameters dependence under combined substrate hot electron injection and constant voltage stress tunneling

Pi-Molecular dielectric layer for organic thin film diode

self-assembled molecules,organic monolayer, electrical caracterisation (leakage current, capacitance)Very thin (1.2-2.5nm) self-assembled organic dielectric monolayers have been integrated into organic thin-film diode to achieve electrical characteristics. These dielectrics are fabricated by self-assembling deposition, resulting in smooth, strongly adherent, thermally stable, organosiloxane thin films having interesting electrical capacitances (around 150 nF cm-2 at -3V) and insulating properties (leakage current densities around 10-5 A cm2 at -1V)

Carrier injection efficiency for the reliability study of 3.5–1.2 nm thick gate-oxide CMOS technologies

International audienceThe hot carrier (HC) reliability has been investigated in MOSFETs with ultra-thin SiO2 gate-oxide ranging from Tox= 3.5 to 1.2 nm and in high speed CMOS technologies in order to identify the worst-case of HC injections. Distinctions are obtained between the influence of the Tox thinning and the shrink of the gate-length with LG ranging from 0.25 to 0.1μm. Results show that the worst-case of HC damage can be different from the bias condition of the maximum substrate current (IB) in N-channel devices and of the hot electron (HE) injections in P-channel devices with the Tox and LG margin. It is shown that the interface trap generation (ΔNit) has become the main damage mechanism at long term with the use of the correlation between charge pumping analysis and drain current reduction. We focus on the hole injection efficiency, the extension of the degraded region (ΔL) with the LG reduction and the influence of the carrier energy which all participate to the degradation of ultra-thin gate-oxide MOSFETs submitted to carrier injections

Human cytomegalovirus quantification in toddlers saliva from day care centers and emergency unit: A feasibility study.

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Direct genotyping of cytomegalovirus envelope glycoproteins from toddler's saliva samples

Centre Hospitalier Universitaire (CHU) Limoges, Centre National de Reference du CMV, Laboratoire de Bactériologie-Virologie-Hygiène, Limoges, FranceInternational audienceBACKGROUND: The polymorphism of genes encoding CMV envelope protein is used for strain classification and may influence pathogenesis and/or infectivity. CMV genotyping is usually based on sequencing or acrylamide gel-RFLP, but these methods are not suited to rapid screening of large populations. OBJECTIVES: We developed a high-throughput method to analyze CMV strains diversity and to detect multiple-strain infection in a large population of toddlers (six daycare centers (DCC) and an emergency unit (EU)). METHODS: We developed a new PCR-RFLP method coupled with capillary electrophoresis fragment detection for UL55-gB, UL75-gH and UL73-gN genotyping. To detect gB recombinants, gpUL55 typing was applied to two variable zones (NTerminal and central). We applied this method to 212 CMV-positive saliva samples and controlled the results by direct sequencing of PCR products. RESULTS: We identified 112 strains, that fell into eight groups in UL55-gB, two groups in UL75-gH, and seven groups in UL73-gN. The 79 samples from the emergency unit contained 30 strains, 28 children harboring 2 strains. The samples (n=133) from the six daycare centers contained respectively 4, 1, 6, 1 and 11 strains. Fifteen percent of strains were UL55-gB recombinants. CONCLUSION: Our new method can simultaneously determine gB, gH and gN genotypes and offers more precise classification of CMV strains than previous RFLP-based methods. This could constitute the basis for a new classification, particularly in UL55-gB. Easy direct identification of multiple strains and recombinants in pathological samples could facilitate large epidemiologic studies