82 research outputs found
Evolution of ferromagnetic circular dichroism coincident with magnetization and anomalous Hall effect in Co-doped rutile TiO2
Magnetic circular dichroism (MCD) of rutile Ti1-xCoxO2-d is systematically
examined with various x and d to reveal a phase diagram for the appearance of
ferromagnetism at higher carrier concentration and Co content. The phase
diagram exactly matches with that determined from anomalous Hall effect (AHE).
The magnetic field dependence of MCD also shows good coincidence with those of
the magnetization and AHE. The coincidence of these independent measurements
strongly suggests single and intrinsic ferromagnetic origin.Comment: 9 pages, 4 figure
Magnetic oxide semiconductors
Magnetic oxide semiconductors, oxide semiconductors doped with transition
metal elements, are one of the candidates for a high Curie temperature
ferromagnetic semiconductor that is important to realize semiconductor
spintronics at room temperature. We review in this paper recent progress of
researches on various magnetic oxide semiconductors. The magnetization,
magneto-optical effect, and magneto-transport such as anomalous Hall effect are
examined from viewpoint of feasibility to evaluate the ferromagnetism. The
ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed.Comment: 26 pages, 5 tables, 6 figure
A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction
A magnetic tunnel junctions composed of room temperature ferromagnetic
semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated
by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio
of ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injection
electrode. The TMR decreased with increasing temperature and vanished above 180
K. TMR action at high temperature is likely prohibited by the inelastic
tunneling conduction due to the low quality of the amorphous barrier layer
and/or the junction interface.Comment: 9 pages, 4 figure
Signature of Carrier-Induced Ferromagnetism in Ti_{1-x}Co_{x}O_{2-delta}: Exchange Interaction Between High-Spin Co 2+ and the Ti 3d Conduction Band
X-ray photoemission spectroscopy measurements were performed on thin-film
samples of rutile Ti_{1-x}Co_{x}O_{2-delta} to reveal the electronic structure.
The Co 2p core level spectra indicate that the Co ions take the high-spin Co 2+
configuration, consistent with substitution on the Ti site. The high spin state
and the shift due to the exchange splitting of the conduction band suggest
strong hybridization between carriers in the Ti 3d t2g band and the t2g states
of the high-spin Co 2+. These observations support the argument that room
temperature ferromagnetism in Ti_{1-x}Co_{x}O_{2-delta} is intrinsic.Comment: 4 pages, 5 figures. Accepted for publication in Physical Review
Letter
Role of charge carriers for ferromagnetism in cobalt-doped rutile TiO2
Electric and magnetic properties of a high temperature ferromagnetic oxide
semiconductor, cobalt-doped rutile TiO2, are summarized. The cobalt-doped
rutile TiO2 epitaxial thin films with different electron densities and cobalt
contents were grown on r-sapphire substrates with laser molecular beam epitaxy.
Results of magnetization, magnetic circular dichroism, and anomalous Hall
effect measurements were examined for samples with systematically varied
electron densities and cobalt contents. The samples with high electron
densities and cobalt contents show the high temperature ferromagnetism,
suggesting that charge carriers induce the ferromagnetism.Comment: 14 pages, 12 figure
Electronic Transport in the Oxygen Deficient Ferromagnetic Semiconducting TiO
TiO films were deposited on (100) Lanthanum aluminates
LaAlO substrates at a very low oxygen chamber pressure
mtorr employing a pulsed laser ablation deposition technique. In previous work,
it was established that the oxygen deficiency in these films induced
ferromagnetism. In this work it is demonstrated that this same oxygen
deficiency also gives rise to semiconductor titanium ion impurity donor energy
levels. Transport resistivity measurements in thin films of TiO
are presented as a function of temperature and magnetic field. Magneto- and
Hall- resistivity is explained in terms of electronic excitations from the
titanium ion donor levels into the conduction band.Comment: RevTeX4, Four pages, Four Figures in ^.eps forma
Indication of intrinsic room-temperature ferromagnetism in Ti1-xCoxO2-d thin film: An x-ray magnetic circular dichroism study
Soft x-ray magnetic circular dichroism (XMCD) measurements at the Co L2,3
edges of Co doped rutile TiO2 at room temperature have revealed clear multiplet
features characteristic of ferromagnetic Co2+ ions coordinated by O2- ions,
being in sharp contrast to the featureless XMCD spectrum of Co metal or
metallic clusters. The absorption and XMCD spectra agree well with a full
atomic-multiplet calculation for the Co2+ high-spin state in the D2h-symmetry
crystal field at the Ti site in rutile TiO2. The results indicate that the
ferromagnetism arises from the Co2+ ions substituting the Ti4+ ions.Comment: 11 pages including 3 figure
Bulk and Surface Magnetization of Co atoms in Rutile Ti_[1-x]Co_xO_[2-delta] Thin Films Revealed by X-Ray Magnetic Circular Dichroism
We have studied magnetism in Ti_[1-x]Co_xO_[2-\delta] thin films with various
x and \delta by soft x-ray magnetic circular dichroism (XMCD) measurements at
the Co L_[2,3] absorption edges. The estimated ferromagnetic moment by XMCD was
0.15-0.24 \mu\beta/Co in the surface, while in the bulk it was 0.82-2.25
\mu\beta/Co, which is in the same range as the saturation magnetization of
1.0-1.5 \mu\beta/Co. Theseresults suggest that the intrinsic origin of the
erromagnetism. The smaller moment of Co atom at surface is an indication of a
magnetically dead layer of a few nm thick at the surface of the thin films.Comment: This Paper is accepted in J. of Phys: Conds. Matte
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