Immediately 'no' for peanut allergy and isotretinoin use?

Acne vulgaris is a common disease which is regularly and effectively treated with isotretinoin. A contra-indication for the treatment is peanut or soybean allergy. It is not totally clear how up to date this information is and if it is necessary to regard this as a strict contraindication. We present a 26-year old female with a serious peanut allergy, whose acne vulgaris was successfully treated with isotretinoin

High-performance solution-processed polymer ferroelectric field-effect transistors

We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor material. The on- and off-state drain currents differ by several orders of magnitude, and have a long retention time, a high programming cycle endurance and short programming time. The remanent semiconductor surface charge density in the on- state has a high value of 18 mC m(-2), which explains the large on/off ratio. Application of a moderate gate field raises the surface charge to 26 mC m(-2), which is of a magnitude that is very difficult to obtain with conventional FETs because they are limited by dielectric breakdown of the gate insulator. In this way, the present ferroelectric-semiconductor interface extends the attainable field-effect band bending in organic semiconductors

High-performance solution-processed polymer ferroelectric field-effect transistors

We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor material. The on- and off-state drain currents differ by several orders of magnitude, and have a long retention time, a high programming cycle endurance and short programming time. The remanent semiconductor surface charge density in the on-state has a high value of 18 mC m–2, which explains the large on/off ratio. Application of a moderate gate field raises the surface charge to 26 mC m–2, which is of a magnitude that is very difficult to obtain with conventional FETs because they are limited by dielectric breakdown of the gate insulator. In this way, the present ferroelectric–semiconductor interface extends the attainable field-effect band bending in organic semiconductors.