Linear programming analysis of the RR-parity violation within EDM-constraints

The constraint on the $R$-parity violating supersymmetric interactions is discussed in the light of current experimental data of the electric dipole moment of neutron, $^{129}$Xe , $^{205}$Tl, and $^{199}$Hg atoms, and YbF and ThO molecules. To investigate the constraints without relying upon the assumption of the dominance of a particular combination of couplings over all the rest, an extensive use is made of the linear programming method in the scan of the parameter space. We give maximally possible values for the EDMs of the proton, deuteron, $^3$He nucleus, $^{211}$Rn, $^{225}$Ra, $^{210}$Fr, and the $R$-correlation of the neutron beta decay within the constraints from the current experimental data of the EDMs of neutron, $^{129}$Xe, $^{205}$Tl, and $^{199}$Hg atoms, and YbF and ThO molecules using the linear programming method. It is found that the $R$-correlation of the neutron beta decay and hadronic EDMs are very useful observables to constrain definite regions of the parameter space of the $R$-parity violating supersymmetry.Comment: 24 pages, 6 figure

Constraint on R-parity violating MSSM at the one-loop level from CP-odd N-N interaction

Minimal supersymmetric standard model with R-parity violation (RPVMSSM) contributes to the P-, CP-odd four-quark interaction. The P-, CP-odd four-quark interaction is constrained by the new 199Hg EDM experimental data. It is then possible to constrain R-parity violating (RPV) couplings from the 199Hg EDM data. In this talk, we analyze the RPV contribution to the P-, CP-odd four- quark interaction at the one-loop level to give constraints on RPV parameters.Comment: To appear in the proceedings of International conference on the structure of baryons: BARYONS'10, Osaka, Japan, 7-11 Dec 201

R-parity violating supersymmetric contributions to the neutron beta decay at the one-loop level

The contribution of the R-parity violating minimal supersymmetric standard model to the neutron beta decay at the one-loop level is investigated. It is found that the baryon number and R-parity violating interactions contribute to the D correlation through one-loop corrections, while the tree level prediction is vanishing. The Fierz interference term is also investigated at the one-loop level by considering the lepton number and R-parity violating interactions. We show that future experimental progress can provide us with better constraints on some of the combinations of R-parity violating couplings.Comment: 13 pages, 6 figures, minor correction

R-parity violating supersymmetric contributions to the neutron beta decay

We investigate the contribution to the angular correlation coefficients of the neutron beta decay within the R-parity violating (RPV) minimal supersymmetric standard model (MSSM). The RPV effects contribute to the scalar interaction at the tree level. The effective scalar interaction of the neutron beta decay is constructed by making use of the relation between isospin asymmetries and the proton-neutron mass difference. On the basis of the recent update of the analyses of the superallowed Fermi transitions and the recent measurement of transverse polarization of the emitted electrons at PSI, we deduce new upper limits on the RPV couplings. We also point out the existence of new types of angular correlations which are sensitive to the RPV interactions.Comment: 11 pages, 2 figures, minor errors corrected, references adde

Chemical Etching of Silicon Assisted by Graphene Oxide in an HF–HNO₃ Solution and Its Catalytic Mechanism

Chemical etching of silicon assisted by various types of carbon materials is drawing much attention for the fabrication of silicon micro/nanostructures. We developed a method of chemical etching of silicon that utilizes graphene oxide (GO) sheets to promote the etching reaction in a hydrofluoric acid–nitric acid (HF–HNO₃) etchant. By using an optimized composition of the HF–HNO₃ etchant, the etching rate under the GO sheets was 100 times faster than that of our HF–H₂O₂ system used in a previous report. Kinetic analyses showed that the activation energy of the etching reaction was almost the same at both the bare silicon and GO-covered areas. We propose that adsorption sites for the reactant in the GO sheets enhance the reaction frequency, leading to a deeper etching in the GO areas than the bare areas. Furthermore, GO sheets with more defects were found to have higher catalytic activities. This suggests that defects in the GO sheets function as adsorption sites for the reactant, thereby enhancing the etching rate under the sheets

Extraction of Daily Life Log Measured by Smart Phone Sensors Using Neural Computing

AbstractThis paper deals with the information extraction of daily life log measured by smart phone sensors. Two types of neural computing are applied for estimating the human activities based on the time series of the measured data. Acceleration, angular velocity, and movement distance are measured by the smart phone sensors and stored as the entries of the daily life log together with the activity information and timestamp. First, growing neural gas performs clustering on the data. Then, spiking neural network is applied to estimate the activity. Experiments are performed for verifying the effectiveness of the proposed method