7 research outputs found
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures
The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) Ć 10[su11] cm-2. The dependence f3dB ā n s - 0.04Ā±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons
The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f3 dB) is varied from 150 to 250 MHz with a change in the concentration ns according to the power law f3dB ā nsā0.5 due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (Ī¼ > 3 Ć 105 cm2 Vā1 sā1 at 4.2 K).
Original Russian Text Ā© E.L. Shangina, K.V. Smirnov, D.V. Morozov, V.V. Kovalyuk, G.N. Golātsman, A.A. Verevkin, A.I. Toropov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 11, pp. 1475ā1477
Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements
We present measurements of the energy relaxation time, ĻĪµ, of electrons in a single AlGaAs/GaAs heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, ĻĪµānĪ³s with Ī³ = 0.40 Ā± 0.02 for values of the carrier density, ns, from 1.6 Ć 1011 to 6.6 Ć 1011cmā2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas