626 research outputs found
First-Principles Study for Evidence of Low Interface Defect Density at Ge/GeO Interfaces
We present the evidence of the low defect density at Ge/GeO interfaces in
terms of first-principles total energy calculations. The energy advantages of
the atom emission from the Ge/GeO interface to release the stress due to
the lattice mismatch are compared with those from the Si/SiO interface. The
energy advantages of the Ge/GeO are found to be smaller than those of the
Si/SiO because of the high flexibility of the bonding networks in GeO.
Thus, the suppression of the Ge-atom emission during the oxidation process
leads to the improved electrical properties of the Ge/GeO interfaces
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