Growth of transparent conductive Al-doped ZnO thin films and device applications

High-purity transparent conductive Al-doped ZnO (AZO) films were grown by KrF excimer pulsed laser deposition. We used ultraviolet and X-ray photoelectron spectroscopes to directly measure the absolute values of the vacuum work function of AZO films. The structure and electrical and optical properties of the as-grown AZO films were studied using X-ray diffraction, room temperature Hall effect measurement and spectro photometer, respectively. Finally, organic light emitting diodes (OLED) were fabricated on these AZO films. OLED device measurement showed that the current of the OLED with AZO was clearly increased. Our AZO thin films showed a higher conductivity (& ¼ 1:33 Â 10 À4 cm, R s ¼ 10:1 /sq) than conventional indium tin oxide films

ZASTOSOWANIE WYŁADOWANIA ELEKTRYCZNEGO DO OZONOWANIA GLEBY

In this study, influence of ozone treatment on physical properties of soil was investigated. We used a quartz container for ozone treatment of soil. The amount of soil used for treatment was 100 g. Treating time was 90 minutes. Flow rate of ozone gas was 1.5 L/min. We measured characteristics of soil such as inorganic nutrient (NO3-N, NO2-N, and NH4-N), pH(H2O), fungi, DNA of soil, and exchangeable bases (Ca, K, Fe, and Al) before and after ozone treatment.W niniejszym opracowaniu, opisano badania wpływu obróbki ozonem na własności fizyczne gleby. Do ozonowania gleby wykorzystaliśmy pojemnik kwarcowy. Ilość gleby poddanej działaniu ozonu wynosiła 100g, a czas oddziaływania 90 minut. Przepływ ozonu wyniósł 1.5l/min. Mierzono właściwości gleby, takie jak nieorganiczne składniki odżywcze (NO3-N, NO2-N i NH4-N), pH(H2O), grzyby, DNA w glebie i zasady wymienne (Ca, K, Fe i Al) przed i po poddaniu jej działaniu ozonu

ZASTOSOWANIE WYŁADOWANIA ELEKTRYCZNEGO DO OZONOWANIA GLEBY

In this study, influence of ozone treatment on physical properties of soil was investigated. We used a quartz container for ozone treatment of soil. The amount of soil used for treatment was 100 g. Treating time was 90 minutes. Flow rate of ozone gas was 1.5 L/min. We measured characteristics of soil such as inorganic nutrient (NO3-N, NO2-N, and NH4-N), pH(H2O), fungi, DNA of soil, and exchangeable bases (Ca, K, Fe, and Al) before and after ozone treatment.W niniejszym opracowaniu, opisano badania wpływu obróbki ozonem na własności fizyczne gleby. Do ozonowania gleby wykorzystaliśmy pojemnik kwarcowy. Ilość gleby poddanej działaniu ozonu wynosiła 100g, a czas oddziaływania 90 minut. Przepływ ozonu wyniósł 1.5l/min. Mierzono właściwości gleby, takie jak nieorganiczne składniki odżywcze (NO3-N, NO2-N i NH4-N), pH(H2O), grzyby, DNA w glebie i zasady wymienne (Ca, K, Fe i Al) przed i po poddaniu jej działaniu ozonu

Scalability of spin FPGA: A Reconfigurable Architecture based on spin MOSFET

Scalability of Field Programmable Gate Array (FPGA) using spin MOSFET (spin FPGA) with magnetocurrent (MC) ratio in the range of 100% to 1000% is discussed for the first time. Area and speed of million-gate spin FPGA are numerically benchmarked with CMOS FPGA for 22nm, 32nm and 45nm technologies including 20% transistor size variation. We show that area is reduced and speed is increased in spin FPGA owing to the nonvolatile memory function of spin MOSFET.Comment: 3 pages, 7 figure

Separated pulsed laser deposition for nanostructured thin films

Abstract We have developed an alternative laser deposition technique for preparation of droplet-free thin films and fine particles. This separated pulsed laser deposition (SPLD) consists of an ablation chamber and a deposition chamber which are independently evacuated under different ambient gases. High quality ZnO films exhibiting both particle-free and uniform deposition were obtained such as at an ablation pressure of 5 mTorr (Ar) and a deposition pressure of 10 mTorr (O 2 ). It is shown that, when the bias voltage and magnetic field are simultaneously applied in the deposition chamber, the E × B drift motion of about 70 km/s over the substrates contributes to deposit the smooth and high quality films. XRD and optical transmittance for the deposited films were investigated to clarify the operating properties of the SPLD assisted by the electric field and magnetic field. This SPLD is a promising technique for preparation of films and nanostructured particles

Synthesis of p-type ZnO thin films using co-doping techniques based on KrF excimer laser deposition

Abstract Preparation of N-doped ZnO thin films was attempted using various co-doping methods. A ZnO:Ga (Ga O of 5 wt.%) target 2 3 was ablated in NO gas by pulsed laser deposition (PLD). In addition, a nitrogen ion gun and an ECR nitrogen plasma source were used as post-N-doping treatment of undoped ZnO films. Optical emission from elemental Zn I, Ga I and O I, as well as from N molecules, was identified in the plasma plume. The structural, optical and electrical properties of these synthesized films 2 were investigated. All films show n-type conduction, with resistivity in the range 10 -10 V cm and carrier density from y3 y2 10 to 10 cm

NO Sensing Property of Carbon Nanotube Based Thin Film Gas Sensors Prepared by Chemical Vapor Deposition Techniques

To prepare a gas sensor that can operate at room temperature, carbon nanotubes (CNTs) were grown on Al 2 O 3 substrates with interdigital Pt electrodes (Al 2 O 3 substrate) by both pulsed laser deposition (PLD) and chemical vapor deposition (CVD). In this combined method, Fe catalytic thin film was prepared by PLD and then CNTs were grown on the Fe thin film by thermal CVD using an ethylene gas. The surface images of the prepared CNTs on the substrates were observed by scanning electron microscopy (SEM), and the sensitivity to NO gas was measured. The resistance of the prepared CNT-based gas sensor was found to decrease with increasing sensor temperature, and it decreased with increasing NO gas concentration at room temperature. In this paper, it is suggested that CNT gas sensors have a great possibility to be applied as innovative NO gas sensors on the basis of the experimental results

Identification and characterization of an oocyte factor required for development of porcine nuclear transfer embryos.

Nuclear reprogramming of differentiated cells can be induced by oocyte factors. Despite numerous attempts, these factors and mechanisms responsible for successful reprogramming remain elusive. Here, we identify one such factor, necessary for the development of nuclear transfer embryos, using porcine oocyte extracts in which some reprogramming events are recapitulated. After incubating somatic nuclei in oocyte extracts from the metaphase II stage, the oocyte proteins that were specifically and abundantly incorporated into the nuclei were identified by mass spectrometry. Among 25 identified proteins, we especially focused on a multifunctional protein, DJ-1. DJ-1 is present at a high concentration in oocytes from the germinal vesicle stage until embryos at the four-cell stage. Inhibition of DJ-1 function compromises the development of nuclear transfer embryos but not that of fertilized embryos. Microarray analysis of nuclear transfer embryos in which DJ-1 function is inhibited shows perturbed expression of P53 pathway components. In addition, embryonic arrest of nuclear transfer embryos injected with anti-DJ-1 antibody is rescued by P53 inhibition. We conclude that DJ-1 is an oocyte factor that is required for development of nuclear transfer embryos. This study presents a means for identifying natural reprogramming factors in mammalian oocytes and a unique insight into the mechanisms underlying reprogramming by nuclear transfer