Increased Optical Damage Resistance In Lithium Niobate

We have confirmed greatly improved resistance to photorefractive damage in compositions of lithium niobate containing 4.5 at. % MgO or more. Holographic diffraction measurements of photorefraction demonstrated that the improved performance is due to a hundredfold increase in the photoconductivity, rather than a decrease in the Glass current. The diffraction efficiency shows an Arrhenius dependence on temperature, with an activation energy of 0.1 eV for the damage-resistant compositions, compared with 0.5 eV for undoped or low-magnesium compositions. The damage-resistant compositions are distinguished by a 2.83-μm absorption line instead of the usual 2.87-μm line due to the OH-stretch vibration

Threshold Effect In Mg-doped Lithium Niobate

Optical absorption spectra were obtained after reducing (i.e., vacuum annealing) a series of LiNbO3 crystals grown from melts having various Mg concentrations and Li/Nb ratios. A band peaking at 500 nm, and assigned to oxygen vacancies containing two electrons, was the only absorption present in one set of crystals following reduction. In contrast, two overlapping bands peaking near 1200 and 760 nm were present in the other set of crystals immediately after the reduction. The 1200-nm band is assigned to a previously unreported electron trap and the 760-nm band to oxygen vacancies containing only one electron. These data are interpreted in terms of a threshold level for Mg doping; however, the threshold Mg doping level is not a constant but depends on the ratio of Mg ions to Li vacancies