All-Optical Modulation in a Silicon Waveguide Based on a Single-Photon Process

All-optical, low-power modulation is a major goal in photonics. Because of their high mode-field concentration and ease of manufacturing, nanoscale silicon waveguides offer an intriguing platform for photonics. So far, all-optical modulators built with silicon photonic circuits have relied on either two-photon absorption or the Kerr effect. Both effects are weak in silicon, and require extremely high (~5 W) peak optical power levels to achieve modulation. Here, we describe an all-optical Mach-Zehnder modulator based on a single-photon absorption (SPA) process, fabricated entirely in silicon. Our SPA modulator is based on a process by which a single photon at 1.55 mum is absorbed and an apparently free-carrier-mediated process causes an index shift in silicon, even though the photon energy does not exceed that of silicon's bandgap. We demonstrate all-optical modulation with a gate response of 1deg/mW at 0.5 Gb/s. This is over an order of magnitude more responsive than typical previously demonstrated devices. Even without resonant enhancement, further engineering may enable all optical modulation with less than 10 mW of gate power required for complete extinction, and speeds of 5 Gb/s or higher

High-Q optical resonators in silicon-on-insulator-based slot waveguides

This letter describes the design, fabrication and characterization of high-Q oval resonators based on slot waveguide geometries in thin silicon-on-insulator material. Optical quality factors of up to 27 000 were measured in such filters, and we estimate losses of –10 dB/cm in the slotted waveguides on the basis of our resonator measurements. Such waveguides enable the concentration of light to very high optical fields within nanoscale dimensions, and show promise for the confinement of light in low-index material with potential applications for optical modulation, nonlinear optics and optical sensing

High-Q ring resonators in thin silicon-on-insulator

We have fabricated high-Q microrings from thin silicon-on-insulater SOI layers and measured Q values of 45 000 in these rings, which were then improved to 57 000 by adding a PMMA cladding. The optimal waveguide designs were calculated, and the waveguide losses were analyzed. These high-Q resonators are expected to lead to interesting devices for telecommunication filters and sources as well as optical refractive index sensing

Integrated plasmon and dielectric waveguides

We have designed, fabricated and characterized surface plasmon waveguides for near infrared light in the telecommunications spectrum. These waveguides exhibit losses of -1.2dB/μm and can guide light around 0.5 μm bends. Light can also be efficiently coupled between more conventional silicon waveguides and these plasmon waveguides with compact couplers, and we demonstrate that surface plasmon optical devices can be constructed by using planar circuit fabrication techniques. The large optical field enhancements of metallic surface plasmon devices are expected to lead to a new class of plasmonic optical devices, which will take advantage of the large field enhancements at the surfaces of the plasmon waveguides for nonlinear or sensing functionality, while utilizing the low losses available in silicon waveguides to move light longer distances on chip

Silicon Waveguides and Ring Resonators at 5.5 {\mu}m

We demonstrate low loss ridge waveguides and the first ring resonators for the mid-infrared, for wavelengths ranging from 5.4 to 5.6 {\mu}m. Structures were fabricated using electron-beam lithography on the silicon-on-sapphire material system. Waveguide losses of 4.0 +/- 0.7 dB/cm are achieved, as well as Q-values of 3.0 k.Comment: 4 pages, 4 figures, includes supplemental material

Segmented waveguides in thin silicon-on-insulator

We have developed new silicon-on-insulator waveguide designs for simultaneously achieving both low-loss optical confinement and electrical contacts, and we present a design methodology based on calculating the Bloch modes of such segmented waveguides. With this formalism, waveguides are designed in a single thin layer of silicon-on-insulator to achieve both optical confinement and minimal insertion loss. Waveguides were also fabricated and tested, and the measured data were found to closely agree with theoretical predictions, demonstrating input insertion loss and propagation loss better than 0.1 dB and -16 dB/cm, respectively

Analysis of the Tuning Sensitivity of Silicon-on-Insulator Optical Ring Resonators

High-quality-factor optical ring resonators have recently been fabricated in thin silicon-on-insulator (SOI). Practical applications of such devices will require careful tuning of the precise location of the resonance peaks. In particular, one often wants to maximize the resonance shift due to the presence of an active component and minimize the resonance shift due to temperature changes. This paper presents a semianalytic formalism that allows the prediction of such resonance shifts from the waveguide geometry. This paper also presents the results of experiments that show the tuning behavior of several ring resonators and find that the proposed semianalytic formalism agrees with the observed behavior