Topological surface states hybridized with bulk states of Bi-doped PbSb2Te4 revealed in quasiparticle interference

Topological surface states of Bi-doped PbSb2Te4 [Pb(Bi0.20Sb0.80)2Te4] are investigated through analyses of quasiparticle interference (QPI) patterns observed by scanning tunneling microscopy. Interpretation of the experimental QPI patterns in the reciprocal space is achieved by numerical QPI simulations using two types of surface density of states produced by density functional theory calculations or a kp surface state model. We found that the Dirac point (DP) of the surface state appears in the bulk band gap of this material and, with the energy being away from the DP, the isoenergy contour of the surface state is substantially deformed or separated into segments due to hybridization with bulk electronic states. These findings provide a more accurate picture of topological surface states, especially at energies away from the DP, providing valuable insight into the electronic properties of topological insulators.Comment: 7+8 pages, 4+5 figure

Superconductivity in a van der Waals layered quasicrystal

van der Waals (vdW) layered transition-metal chalcogenides are attracting significant attention owing to their fascinating physical properties. This group of materials consists of abundant members with various elements, having a variety of different structures. However, all vdW layered materials studied to date have been limited to crystalline materials, and the physical properties of vdW layered quasicrystals have not yet been reported. Here, we report on the discovery of superconductivity in a vdW layered quasicrystal of Ta1.6Te. The electrical resistivity, magnetic susceptibility, and specific heat of the Ta1.6Te quasicrystal fabricated by reaction sintering, unambiguously validated the occurrence of bulk superconductivity at a transition temperature of ~1 K. This discovery can pioneer new research on assessing the physical properties of vdW layered quasicrystals as well as two-dimensional quasicrystals; moreover, it paves the way toward new frontiers of superconductivity in thermodynamically stable quasicrystals, which has been the predominant challenge facing condensed matter physics since the discovery of quasicrystals almost four decades ago

Experimental verification of band convergence in Sr and Na codoped PbTe

Scanning tunneling microscopy and transport measurements have been performed to investigate the electronic structure and its temperature dependence in heavily Sr and Na codoped PbTe, which is recognized as one of the most promising thermoelectric materials. Our main findings are as follows: (i) Below T=4.5 K, all carriers are distributed in the first valence band at the L point (L band), which forms tube-shaped Fermi surfaces with concave curvature. With Sr and Na doping, the dispersion of the L band changes, and the band gap increases from 200 meV to 300 meV. (ii) At T=4.5 K, the Fermi energy is located ~100 meV below the edge of the L band for the Sr/Na codoped PbTe. The second valence band at the Sigma point (Sigma band) is lower than the L band by 150 meV, which is significantly smaller than that of pristine PbTe (200 meV). The decrease in the band offset, leading to band convergence, provides a desirable condition for thermoelectric materials.(iii) With increasing temperature, the carrier distribution to the Sigma band starts at T=100 K and we estimate that about 50 percent of the total carriers are redistributed in the Sigma band at T=300 K.Our work demonstrates that scanning tunneling microscopy and angular dependent magnetoresistance measurements are particularly powerful tools to determine the electronic structure and carrier distribution. We believe that they will provide a bird's eye view of the doping strategy towards realizing high-efficiency thermoelectric materials.Comment: 36+12 pages, 4+9 figures, including Supplementary Material

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B(2)O(3)) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm(-1) in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B(2)O(3) liquid was about 10(16) cm(-3) and was almost the same as that in a Ge crystal grown without B(2)O(3). Oxygen concentration in a Ge crystal was enhanced to be greater than 10(17) cm(-3) by growing a crystal from a melt fully covered with B(2)O(3); with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5 x 10(17) cm(-3). The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.ArticleJOURNAL OF CRYSTAL GROWTH. 312(19):2783-2787 (2010)journal articl

High-Density Well-Aligned Dislocations Introduced by Plastic Deformation in Bi1−xSbx Topological Insulator Single Crystals

Topological insulators (TIs) have a bulk bandgap and gapless edge or surface states that host helically spin-polarized Dirac fermions. Theoretically, it has been predicted that gapless states could also be formed along dislocations in TIs. Recently, conductivity measurements on plastically deformed bismuth antimony (Bi1−xSbx) TIs have revealed excess conductivity owing to dislocation conduction. For further application of them, fundamental study on dislocations in TIs is indispensable. Dislocations controlled based on fundamental studies could potentially be useful not only for experimental investigations of the dislocation properties but also for diverse device applications. In the present study, Bi1−xSbx TI single crystals were fabricated by a zone-melting method. The crystals were plastically deformed at room temperature. The resultant dislocations were observed by transmission electron microscopy (TEM). It was found that high-density dislocations with the Burgers vector satisfying the condition for the formation of gapless states were successfully introduced. The dislocations were mostly of edge type with lengths on the order of more than a few micrometers

Mouse dead end1 acts with Nanos2 and Nanos3 to regulate testicular teratoma incidence.

Spontaneous testicular teratomas (STTs) derived from primordial germ cells (PGCs) in the mouse embryonic testes predominantly develop in the 129 family inbred strain. Ter (spontaneous mutation) is a single nucleotide polymorphism that generates a premature stop codon of Dead end1 (Dnd1) and increases the incidence of STTs in the 129 genetic background. We previously found that DND1 interacts with NANOS2 or NANOS3 and that these complexes play a vital role in male embryonic germ cells and adult spermatogonia. However, the following are unclear: (a) whether DND1 works with NANOS2 or NANOS3 to regulate teratoma incidence, and (b) whether Ter simply causes Dnd1 loss or produces a short mutant DND1 protein. In the current study, we newly established a conventional Dnd1-knockout mouse line and found that these mice showed phenotypes similar to those of Ter mutant mice in spermatogenesis, oogenesis, and teratoma incidence, with a slight difference in spermiogenesis. In addition, we found that the amount of DND1 in Dnd1+/Ter embryos decreased to half of that in wild-type embryos, while the expression of the short mutant DND1 was not detected. We also found that double mutants for Dnd1 and Nanos2 or Nanos3 showed synergistic increase in the incidence of STTs. These data support the idea that Ter causes Dnd1 loss, leading to an increase in STT incidence, and that DND1 acts with NANOS2 and NANOS3 to regulate the development of teratoma from PGCs in the 129 genetic background. Thus, our results clarify the role of Dnd1 in the development of STTs and provide a novel insight into its pathogenic mechanism