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Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking
We investigate the magnetotransport properties of quasi-free standing
epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization
in Ar, followed by H intercalation. At the charge neutrality point the
longitudinal resistance shows an insulating behavior, which follows a
temperature dependence consistent with variable range hopping transport in a
gapped state. In a perpendicular magnetic field, we observe quantum Hall states
(QHSs) both at filling factors () multiple of four (), as
well as broken valley symmetry QHSs at and . These results
unambiguously show that the quasi-free standing graphene bilayer grown on the
Si-face of SiC exhibits Bernal stacking.Comment: 12 pages, 5 figure