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Elemental thin film depth profiles by ion beam analysis using simulated annealing - A new tool

Author: Aarts E
Amsel G
Barradas N P
Barradas N P
Barradas N P
Barradas N P
Barradas N P
Barradas N P
Barradas N P
Barradas N P
Bayes R T
Belson A
Bragg W H
Børgesen P
C Jeynes
Carey J D
Chu W K
Dhar S
E Wendler
Edge R D
Feldman L C
Fischer R
G Boudreault
Garrett A
Geiger H
Geiger H
Geiger H
Geman S
Gilks W R
Götz G
Harry M A
Hirvonen J-P
Jackson S M
Johanssen S A E
Kirkpatrick S
Kótai E
Lee P M
Lennard W N
M Jenkin
Malmqvist K G
Marin N
Marriott P K
Marriott P K
Mayer J W
Mayer J W
Mayer M
Metropolis N
Milosavljevic M
Möller W
N P Barradas
P K Marriott
Press W H
Prozesky V M
Pyt'ev Yu P
Pyt'ev Yu P
R P Webb
Rauhala E
Respaldiza M A
Rozenberg G G
Rutherford E
Slotte J
Sorkin G B
Stepanov A L
Szilágyi E
Szilágyi E
Tesmer J R
Tirara J
Uchikoga S
Veloso A
Vieira A
Vizkelethy G
Vonsovici A
Vredenberg A M
Watt F
Wendler E
Wilks Y A
Wätjen U
Wätjen U
Ziegler J F
Publication venue: 'IOP Publishing'
Publication date: 19/03/2003
Field of study

10.1088/0022-3727/36/7/201Journal of Physics D: Applied Physics367R97-R126JPAP

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