Quantum state transfer between photons preloaded with quantum information

Quantum mechanics provides a ``disembodied'' way to transfer an unknown quantum state from one quantum system to another. However, all experiments of quantum state transfer to date are limited to cases where the target quantum system contains no prior quantum information. Here we propose a scheme for transferring a quantum state to a quantum system preloaded with quantum information. By using an optical qubit-ququart entangling gate, we have experimentally demonstrated this new protocol -- transferring a qubit to a photon preloaded with one qubit of quantum information. After the state transfer, the target photon contains two qubits of quantum information, one from the qubit being transferred and the other from the pre-existing qubit. Furthermore, we have also experimentally realized the inverse operation of the aforementioned quantum state transfer, which is called the partial quantum state transfer, namely transferring one qubit of quantum information from a photon preloaded with two qubits of quantum information to another photon. The fidelities of the quantum state transfer range from $0.700$ to $0.917$, all above the classical limit of $2/3$. Our work sheds light on a new direction for quantum state transfer and demonstrates our ability to implement entangling operations beyond two-level quantum systems.Comment: 22pages, 9 figure

Validated model of thermochemical energy storage based on cobalt oxides

Thermal Energy Storage (TES) can play a critical role through provision of reliable energy supply and increase the market penetration of renewable energy sources. Thermochemical Energy Storage (TCES) based on reversible reactions offers distinguished advantages in comparison with sensible and latent heat storage: higher energy density, higher temperature range and possibility of seasonal storage. TCES systems based on the redox cycle of metallic oxides shows significant potential for integration with Concentrated Solar Power (CSP) plants using air as the heat transfer fluid, which also acts as a reactant for the redox reaction. A pilot scale thermochemical storage reactor designed for a CSP plant has been developed and tested in the framework of a collaborative European funded project \u201cRESTRUCTURE\u201d at the Solar Tower Julich (STJ). TCES system is proposed with the aim of achieving higher energy storage capacity and higher storage temperature. Numerical modeling of a TCES prototype presented in this study is a contribution towards this effort. The present work is focused on the innovative one-dimensional modeling of a TCES system based on the redox cycle of cobalt oxides (Co3O4/CoO), coated on the ceramics honeycomb structures. The numerical model for TCES involved the energy balance and reaction kinetics describing the redox reaction of cobalt oxides, to simulate the phenomena of thermochemical storage. The simulation results were presented as the temperature profiles at different positions inside the storage vessel and they were validated against experimental data published in literature by other groups. This validation proved that this model can simulate the overall thermochemical storage process with reasonable accuracy. The simulation tool was also used to perform the parametric analysis of the storage module, which provides guidance to optimize the performance of the storage system. Moreover, due to its good compromise between reliability and computational time, the established 1-D thermochemical storage model can be integrated with the CSP plant model for dynamic analysis of the whole system, which is the aim of this study

Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO) mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed

Surface Modification And Functionalization By Electrical Discharge Coating: A Comprehensive Review

Hard coatings are extensively required in industry for protecting mechanical/structural parts that withstand extremely high temperature, stress, chemical corrosion, and other hostile environments. Electrical discharge coating (EDC) is an emerging surface modification technology to produce such hard coatings by using electrical discharges to coat a layer of material on workpiece surface to modify and enhance the surface characteristics or create new surface functions. This paper presents a comprehensive overview of EDC technologies for various materials, and summarises the types and key parameters of EDC processes as well as the characteristics of resulting coatings. It provides a systematic summary of the fundamentals and key features of the EDC processes, as well as its applications and future trend

Defect Analysis in Microgroove Machining of Nickel-Phosphide Plating by Small Cross-Angle Microgrooving

Crystalline nickel-phosphide (c-Ni-P) plating is a newly developed mold material for precision glass molding (PGM) to fabricate microgrooves. In the ultraprecision cutting process of the c-Ni-P plating material, the neighboring microgrooves are required to adjoin with each other to ensure acute microgroove ridges and miniaturize the microgroove size. Generally, defects of burrs and fracture pits can easily occur on the ridges when the plating layer is grooved. Burrs appear when tears dominate in material removal with a large adjacent amount. With the change of the adjacent amount, the removed material is sheared out from the workpiece, and when the cutting depth of the groove ridge is over the brittle-ductile transition thickness, fracture pits arise. To restrict these defects, a small cross-angle microgrooving method is proposed to test the critical adjacent amount range efficiently. It is found that an acute ridge of the microgroove is formed with a small enough adjacent amount; when this amount is in the range of 570 nm~720 nm in the microgroove machining process, fracture pits begin to arise on the gradient edge. High-quality microgrooves can be obtained based on this methodology