Investigation of rapid degradation in GaN-based blue laser diodes

Investigation of the degradation modes in GaN-based blue laser diodes grown by metal organic chemical vapor deposition (MOCVD) is carried out. Early failure of the LDs happened at the initial stage of the aging. After analysis of the electrical and thermal characteristics, local degradation of the active region is observed. Further investigation on the microstructures of the local regions shows that the early failure of the LDs is due to the local structure damage with the formation of gallium metal. (C) 2016 Elsevier Ltd. All rights reserved

Catastrophic Degradation of InGaN/GaN Blue Laser Diodes

A study of catastrophic degradation of InGaN/GaN laser diodes (LDs) is presented. Local damage on the aged LD is identified with the reduction of the electron beam induced current intensity. A pipe-shaped defect is observed in the particular damaged region by using the transmission electron microscopy (TEM) and scanning TEM technique. Diffusion of the contact metal along the defect is enhanced by the local electric field and high temperature. Catastrophic degradation of the LD occurs due to burning of the local region