1 research outputs found
Carrier relaxation in Si/SiO quantum dots
Carrier relaxation due to both optical and nonradiative intraband transitions
in silicon quantum dots in SiO has been considered. Interaction of confined
holes with optical phonons has been studied. The Huang-Rhys factor is
calculated for such transitions. The probability of intraband transition of a
confined hole emitting several optical phonons is estimated.Comment: 8 pages, 2 figures, submitted as an extended abstract to the E-MRS
Spring Meeting 200