European Community Multi-Center Trial "Fetal ECG Analysis During Labor": ST plus CTG analysis

This report form part of the European Community Multi-Center Trial "Fetal ECG Analysis during Labor". Aim of this prospective trial was to identify changes in the fetal ECG waveform with cases of verified fetal hypoxia. In this paper we also report on the use of a newly developed automatic system for identification of ST waveform changes (ST Log). All ECG were recorded with the STAN recorder (Neoventa Medical AB, Gothenburg, Sweden). The ECG information was not displayed during labor in order not to influence the clinical management. This report includes data from 320 cases and include six cases of fetal intrapartum hypoxia. Twenty seven cases showed changes in ST waveform. All five cases with the most marked ST change (a rise in T/QRS of >0.10 units and lasting more then 10 minutes) had signs of ongoing intrapartum hypoxia. Six out of six cases with evidence of intrapartum asphyxia, showed ST changes. On the basis of our multi-center trial it appears that the combined analysis of CTG and ST waveform changes provides an accurate way to identify adverse events during labor. The work is continuing with a new STAN recorder developed by Neoventa Medical in Goteborg and currently being tested in a Swedish randomized, controlled multi-center trial

CIGSe absorber layers deposition by single target magnetron sputtering

In the last decades, the deposition of CIGSe thin films by sputtering has seldom been investigated. Besides, the sputtering of a single quaternary CIGSe target would be a real advantage for industrial development. Indeed, sputtering technique exhibits a good compatibility with industrial up-scaling and limits selenium use with respect to toxicity issues. In 1992, Hernandez et al.1 early published on CIGSe layers deposited by sputtering of a single quaternary CIGSe target. More recently, Frantz et al2 using such so called "one step sputtering" succeeded to obtain a CIGSe solar cell with an efficiency of 8.9%. At IMN laboratory, a dedicated chamber has been home-designed for CIGSe thin films deposition using one step sputtering. CIGSe thin films were deposited on SLG/Mo substrates by radio-frequency magnetron sputtering and then annealed under controlled atmosphere. The evolution of chemical composition, electrical and structural properties versus deposition parameters will be presented. 1. Hernández Rojas, J. L. et al.. Appl. Phys. Lett. 60, 1875-1877 (1992). 2. Frantz, J. A. et al. Thin Solid Films 519, 7763-7765 (2011)

CIGSe absorber layers deposition by single target magnetron sputtering

In the last decades, the deposition of CIGSe thin films by sputtering has seldom been investigated. Besides, the sputtering of a single quaternary CIGSe target would be a real advantage for industrial development. Indeed, sputtering technique exhibits a good compatibility with industrial up-scaling and limits selenium use with respect to toxicity issues. In 1992, Hernandez et al.1 early published on CIGSe layers deposited by sputtering of a single quaternary CIGSe target. More recently, Frantz et al2 using such so called "one step sputtering" succeeded to obtain a CIGSe solar cell with an efficiency of 8.9%. At IMN laboratory, a dedicated chamber has been home-designed for CIGSe thin films deposition using one step sputtering. CIGSe thin films were deposited on SLG/Mo substrates by radio-frequency magnetron sputtering and then annealed under controlled atmosphere. The evolution of chemical composition, electrical and structural properties versus deposition parameters will be presented. 1. Hernández Rojas, J. L. et al.. Appl. Phys. Lett. 60, 1875-1877 (1992). 2. Frantz, J. A. et al. Thin Solid Films 519, 7763-7765 (2011)