Dirac model of electronic transport in graphene antidot barriers

In order to use graphene for semiconductor applications, such as transistors with high on/off ratios, a band gap must be introduced into this otherwise semimetallic material. A promising method of achieving a band gap is by introducing nanoscale perforations (antidots) in a periodic pattern, known as a graphene antidot lattice (GAL). A graphene antidot barrier (GAB) can be made by introducing a 1D GAL strip in an otherwise pristine sheet of graphene. In this paper, we will use the Dirac equation (DE) with a spatially varying mass term to calculate the electronic transport through such structures. Our approach is much more general than previous attempts to use the Dirac equation to calculate scattering of Dirac electrons on antidots. The advantage of using the DE is that the computational time is scale invariant and our method may therefore be used to calculate properties of arbitrarily large structures. We show that the results of our Dirac model are in quantitative agreement with tight-binding for hexagonal antidots with armchair edges. Furthermore, for a wide range of structures, we verify that a relatively narrow GAB, with only a few antidots in the unit cell, is sufficient to give rise to a transport gap

Electronic and optical properties of graphene antidot lattices: Comparison of Dirac and tight-binding models

The electronic properties of graphene may be changed from semimetallic to semiconducting by introducing perforations (antidots) in a periodic pattern. The properties of such graphene antidot lattices (GALs) have previously been studied using atomistic models, which are very time consuming for large structures. We present a continuum model that uses the Dirac equation (DE) to describe the electronic and optical properties of GALs. The advantages of the Dirac model are that the calculation time does not depend on the size of the structures and that the results are scalable. In addition, an approximation of the band gap using the DE is presented. The Dirac model is compared with nearest-neighbour tight-binding (TB) in order to assess its accuracy. Extended zigzag regions give rise to localized edge states, whereas armchair edges do not. We find that the Dirac model is in quantitative agreement with TB for GALs without edge states, but deviates for antidots with large zigzag regions.Comment: 15 pages, 7 figures. Accepted by Journal of Physics: Condensed matte

The phonon dispersion of graphite by inelastic x-ray scattering

We present the full in-plane phonon dispersion of graphite obtained from inelastic x-ray scattering, including the optical and acoustic branches, as well as the mid-frequency range between the $K$ and $M$ points in the Brillouin zone, where experimental data have been unavailable so far. The existence of a Kohn anomaly at the $K$ point is further supported. We fit a fifth-nearest neighbour force-constants model to the experimental data, making improved force-constants calculations of the phonon dispersion in both graphite and carbon nanotubes available.Comment: 7 pages; submitted to Phys. Rev.

Systematic study of Optical Feshbach Resonances in an ideal gas

Using a narrow intercombination line in alkaline earth atoms to mitigate large inelastic losses, we explore the Optical Feshbach Resonance (OFR) effect in an ultracold gas of bosonic $^{88}$Sr. A systematic measurement of three resonances allows precise determinations of the OFR strength and scaling law, in agreement with coupled-channels theory. Resonant enhancement of the complex scattering length leads to thermalization mediated by elastic and inelastic collisions in an otherwise ideal gas. OFR could be used to control atomic interactions with high spatial and temporal resolution.Comment: Significant changes to text and figure presentation to improve clarity. Extended supplementary material. 4 pages, 4 figures; includes supplementary material 8 pages, 4 figures. Submitted to Physical Review Letter

Optimization of optical data transmitters for 40-Gb/s lightwave systems using frequency resolved optical gating

The measurement technique of frequency resolved optical gating has been used to optimize the phase of a 40-GHz train of optical pulses generated using a continuous-wave laser gated with an external modulator. This technique will be vital for optimization of optical transmitters to be used in systems operating at 40 Gb/s and beyond, as standard measurement techniques will not suffice to optimize such high-speed systems