Alignment verification for electron beam lithography

Alignment between lithography layers is essential for device fabrication. A minor defect in a single marker can lead to incorrect alignment and this can be the source of wafer reworks. In this paper we show that this can be prevented by using extra alignment markers to check the alignment during patterning, rather than inspecting vernier patterns after the exposure is completed. Accurate vernier patterns can often only be read after pattern transfer has been carried out. We also show that by using a Penrose tile as a marker it is possible to locate the marker to about 1 nm without fully exposing the resist. This means that the marker can be reused with full accuracy, thus improving the layer to layer alignment accuracy. Lithography tool noise limits the process

Aviation Law and Regulation

We sought to write a comprehensive reference book for aviation lawyers and practitioners, and airline and aircraft manufactuing executives in need of vital information regarding law and government regulation in the field of commercial and general aviation. We envision this book as an aid for the neophyte and experienced practitioner alike

Aviation Law and Regulation: Abridged Student Edition

We sought to write a comprehensive reference book for aviation lawyers and practitioners, and airline and aircraft manufactuing executives in need of vital information regarding law and government regulation in the field of commercial and general aviation. We envision this book as an aid for the neophyte and experienced practitioner alike

Coherently coupled photonic-crystal surface-emitting laser array

The realization of a 1 × 2 coherently coupled photonic crystal surface emitting laser array is reported. New routes to power scaling are discussed and the electronic control of coherence is demonstrated

Terahertz oscillations in an In_0.53Ga_0.47As submicron planar gunn diode

The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode – the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5μm, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5μm, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600nm and 700nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In<sub>0.53</sub>Ga<sub>0.47</sub>A on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 µW was obtained from a 600 nm long ×120 µm wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible – the Monte Carlo model used predicts power output at frequencies over 300 GHz

1.5 {\mu}m Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode

We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.Comment: 4 pages, 5 figures, journal submission for revie

Determining the electronic performance limitations in top-down fabricated Si nanowires with mean widths down to 4 nm

Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to 4 nm. The importance of high quality surface passivation is demonstrated by a lack of significant donor deactivation, resulting in neutral impurity scattering ultimately limiting the electronic performance. The results indicate the important parameters requiring optimization when fabricating nanowires with atomic dimensions

Resonator embedded photonic crystal surface emitting lasers

The finite size of 2D photonic crystals results in them being a lossy resonator, with the normally emitting modes of conventional photonic crystal surface emitting lasers (PCSELs) differing in photon lifetime via their different radiative rates, and the different in-plane losses of higher order spatial modes. As a consequence, the fundamental spatial mode (lowest in-plane loss) with lowest out-of-plane scattering is the primary lasing mode. For electrically driven PCSELs, as current is increased, incomplete gain clamping results in additional spatial (and spectral) modes leading to a reduction in beam quality. A number of approaches have been discussed to enhance the area (power) scalability of epitaxy regrown PCSELs through careful design of the photonic crystal atom1–3. None of these approaches tackle the inflexibility in being unable to independently modify the photon lifetime of the different modes at the Γ2 point. As a method to introduce design flexibility, resonator embedded photonic crystal surface emitting lasers (REPCSELs) are introduced. This device, combining comparatively low coupling strength photonic crystal structures along with perimeter mirrors, allow a Fabry–Pérot resonance effect to be realised that provides wavelength selective modification of the photon lifetime. We show that surface emission of different surface emitting modes may be selectively enhanced, effectively changing the character of the modes at the Γ2 point. This is a consequence of the selective modification of in-plane loss for particular modes, and is dependent upon the alignment of the photonic crystal (PhC) band-structure and distributed Bragg reflectors’ (DBRs) reflectance spectrum. These findings offer new avenues in surface emitting laser diode engineering. The use of DBRs to reduce the lateral size of a PCSEL opens the route to small, low threshold current (Ith), high output efficiency epitaxy regrown PCSELs for high-speed communication and power sensitive sensing applications