39 research outputs found
Kondo physics in tunable semiconductor nanowire quantum dots
We have observed the Kondo effect in strongly coupled semiconducting nanowire
quantum dots. The devices are made from indium arsenide nanowires, grown by
molecular beam epitaxy, and contacted by titanium leads. The device
transparency can be tuned by changing the potential on a gate electrode, and
for increasing transparencies the effects dominating the transport changes from
Coulomb Blockade to Universal Conductance Fluctuations with Kondo physics
appearing in the intermediate region.Comment: 4 pages, 4 figure
Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients
for realizing high-performance nanoscale devices. A pertinent example is that
advances in gate-tunable and topological superconductivity using
semiconductor/superconductor electronic devices are currently built on the hard
proximity-induced superconducting gap obtained from epitaxial indium
arsenide/aluminium heterostructures. Fabrication of devices requires selective
etch processes; these exist only for InAs/Al hybrids, precluding the use of
other, potentially superior material combinations. We present a crystal growth
platform -- based on three-dimensional structuring of growth substrates --
which enables synthesis of semiconductor nanowire hybrids with in-situ
patterned superconductor shells. This platform eliminates the need for etching,
thereby enabling full freedom in choice of hybrid constituents. We realise and
characterise all the most frequently used architectures in superconducting
hybrid devices, finding increased yield and electrostatic stability compared to
etched devices, along with evidence of ballistic superconductivity. In addition
to aluminium, we present hybrid devices based on tantalum, niobium and
vanadium.
This is the submitted version of the manuscript. The accepted, peer reviewed
version is available from Advanced Materials:
http://doi.org/10.1002/adma.201908411
Previous title: Shadow lithography for in-situ growth of generic
semiconductor/superconductor device
Engineering Hybrid Epitaxial InAsSb/Al Nanowire Materials for Stronger Topological Protection
The combination of strong spin-orbit coupling, large -factors, and the
coupling to a superconductor can be used to create a topologically protected
state in a semiconductor nanowire. Here we report on growth and
characterization of hybrid epitaxial InAsSb/Al nanowires, with varying
composition and crystal structure. We find the strongest spin-orbit interaction
at intermediate compositions in zincblende InAsSb nanowires,
exceeding that of both InAs and InSb materials, confirming recent theoretical
studies \cite{winkler2016topological}. We show that the epitaxial InAsSb/Al
interfaces allows for a hard induced superconducting gap and 2 transport in
Coulomb charging experiments, similar to experiments on InAs/Al and InSb/Al
materials, and find measurements consistent with topological phase transitions
at low magnetic fields due to large effective -factors. Finally we present a
method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit
even stronger spin-orbit coupling than the zincblende structure.Comment: 10 pages and 5 figure
Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO
The two-dimensional metal forming at the interface between an oxide insulator
and SrTiO3 provides new opportunities for oxide electronics. However, the
quantum Hall effect, one of the most fascinating effects of electrons confined
in two dimensions, remains underexplored at these complex oxide
heterointerfaces. Here, we report the experimental observation of quantized
Hall resistance in a SrTiO3 heterointerface based on the modulation-doped
amorphous-LaAlO/SrTiO heterostructure, which exhibits both high
electron mobility exceeding 10000 cm/Vs and low carrier density on the
order of ~10 cm. Along with unambiguous Shubnikov-de Haas
oscillations, the spacing of the quantized Hall resistance suggests that the
interface is comprised of a single quantum well with ten parallel conducting
two-dimensional subbands. This provides new insight into the electronic
structure of conducting oxide interfaces and represents an important step
towards designing and understanding advanced oxide devices
Patterning of high mobility electron gases at complex oxide interfaces
Oxide interfaces provide an opportunity for electronics. However, patterning
of electron gases at complex oxide interfaces is challenging. In particular,
patterning of complex oxides while preserving a high electron mobility remains
underexplored and inhibits the study of quantum mechanical effects where
extended electron mean free paths are paramount. This letter presents an
effective patterning strategy of both the amorphous-LaAlO/SrTiO
(a-LAO/STO) and modulation-doped amorphous-
LaAlO/LaSrMnO/SrTiO (a-LAO/LSM/STO) oxide
interfaces. Our patterning is based on selective wet etching of amorphous-LSM
(a-LSM) thin films which acts as a hard mask during subsequent depositions.
Strikingly, the patterned modulation-doped interface shows electron mobilities
up to ~8,700 cm/Vs at 2 K, which is among the highest reported values for
patterned conducting complex oxide interfaces that usually are ~1,000 cm/Vs
at 2 K