Simulasi peranti bagi ciri elektrik, optik dan terma diod-diod laser (LDs) berasaskan GaN telah dikaji. Bagi laser-laser sedemikian adalah susah memperolehi lapisan penutup-p yang mempunyai ketebalan yang mencukupi,



Device simulations for the electrical, optical and thermal characteristics of GaN-based laser diodes (LDs) have been investigated. It is difficult to obtain pcladding layers with sufficient thickness of high Al composition and high acceptor concentration