207 research outputs found
Local Current Distribution and "Hot Spots" in the Integer Quantum Hall Regime
In a recent experiment, the local current distribution of a two-dimensional
electron gas in the quantum Hall regime was probed by measuring the variation
of the conductance due to local gating. The main experimental finding was the
existence of "hot spots", i.e. regions with high degree of sensitivity to local
gating, whose density increases as one approaches the quantum Hall transition.
However, the direct connection between these "hot spots" and regions of high
current flow is not clear. Here, based on a recent model for the quantum Hall
transition consisting of a mixture of perfect and quantum links, the relation
between the "hot spots" and the current distribution in the sample has been
investigated. The model reproduces the observed dependence of the number and
sizes of "hot spots" on the filling factor. It is further demonstrated that
these "hot spots" are not located in regions where most of the current flows,
but rather, in places where the currents flow both when injected from the left
or from the right. A quantitative measure, the harmonic mean of these currents
is introduced and correlates very well with the "hot spots" positions
Modeling single- and multiple-electron resonances for electric-field-sensitive scanning probes
We have developed a modeling method suitable to analyze single- and
multiple-electron resonances detected by electric-field-sensitive scanning
probe techniques. The method is based on basic electrostatics and a numerical
boundary-element approach. The results compare well to approximate analytical
expressions and experimental data.Comment: 10 pages, 4 figure
Local atomic structure and discommensurations in the charge density wave of CeTe3
The local structure of CeTe3 in the incommensurate charge density wave
(IC-CDW) state has been obtained using atomic pair distribution function (PDF)
analysis of x-ray diffraction data. Local atomic distortions in the Te-nets due
to the CDW are larger than observed crystallographically, resulting in distinct
short and long Te-Te bonds. Observation of different distortion amplitudes in
the local and average structures are explained by the discommensurated nature
of the CDW since the PDF is sensitive to the local displacements within the
commensurate regions whereas the crystallographic result averages over many
discommensurated domains. The result is supported by STM data. This is the
first quantitative local structural study within the commensurate domains in an
IC-CDW system.Comment: 4 pages, 4 figure
Direct observation of micron-scale ordered structure in a two-dimensional electron system
We have applied a novel scanned probe method to directly resolve the interior
structure of a GaAs/AlGaAs two-dimensional electron system in a tunneling
geometry. We find that the application of a perpendicular magnetic field can
induce surprising density modulations that are not static as a function of the
field. Near six and four filled Landau levels, stripe-like structures emerge
with a characteristic wave length ~2 microns. Present theories do not account
for ordered density modulations on this length scale.Comment: 5 pages, 4 figures. To appear in Phys. Rev.
Scanning-probe spectroscopy of semiconductor donor molecules
Semiconductor devices continue to press into the nanoscale regime, and new
applications have emerged for which the quantum properties of dopant atoms act
as the functional part of the device, underscoring the necessity to probe the
quantum structure of small numbers of dopant atoms in semiconductors[1-3].
Although dopant properties are well-understood with respect to bulk
semiconductors, new questions arise in nanosystems. For example, the quantum
energy levels of dopants will be affected by the proximity of nanometer-scale
electrodes. Moreover, because shallow donors and acceptors are analogous to
hydrogen atoms, experiments on small numbers of dopants have the potential to
be a testing ground for fundamental questions of atomic and molecular physics,
such as the maximum negative ionization of a molecule with a given number of
positive ions[4,5]. Electron tunneling spectroscopy through isolated dopants
has been observed in transport studies[6,7]. In addition, Geim and coworkers
identified resonances due to two closely spaced donors, effectively forming
donor molecules[8]. Here we present capacitance spectroscopy measurements of
silicon donors in a gallium-arsenide heterostructure using a scanning probe
technique[9,10]. In contrast to the work of Geim et al., our data show
discernible peaks attributed to successive electrons entering the molecules.
Hence this work represents the first addition spectrum measurement of dopant
molecules. More generally, to the best of our knowledge, this study is the
first example of single-electron capacitance spectroscopy performed directly
with a scanning probe tip[9].Comment: In press, Nature Physics. Original manuscript posted here; 16 pages,
3 figures, 5 supplementary figure
- …