171 research outputs found

    Tunneling images of a 2D electron system in a quantizing magnetic field

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    We have applied a scanning probe method, Subsurface Charge Accumulation (SCA) imaging, to resolve the local structure of the interior of a semiconductor two-dimensional electron system (2DES) in a tunneling geometry. Near magnetic fields corresponding to integer Landau level filling, submicron scale spatial structure in the out-of-phase component of the tunneling signal becomes visible. In the images presented here, the structure repeats itself when the filling factor is changed from nu=6 to nu=7. Therefore, we believe the images reflect small modulations in the 2DES density caused by the disorder in the sample.Comment: 2 pages, 2 color figures, submitted to LT23 proceeding

    Modeling single- and multiple-electron resonances for electric-field-sensitive scanning probes

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    We have developed a modeling method suitable to analyze single- and multiple-electron resonances detected by electric-field-sensitive scanning probe techniques. The method is based on basic electrostatics and a numerical boundary-element approach. The results compare well to approximate analytical expressions and experimental data.Comment: 10 pages, 4 figure

    Subsurface Charge Accumulation Imaging

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    Contains an introduction and a list of publications.Joint Services Electronics Program Grant DAAH04-95-1-0038National Science Foundation Young Investigator AwardU.S. Navy - Office of Naval Research Grant N00014-93-1-063

    Scanning-probe spectroscopy of semiconductor donor molecules

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    Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum structure of small numbers of dopant atoms in semiconductors[1-3]. Although dopant properties are well-understood with respect to bulk semiconductors, new questions arise in nanosystems. For example, the quantum energy levels of dopants will be affected by the proximity of nanometer-scale electrodes. Moreover, because shallow donors and acceptors are analogous to hydrogen atoms, experiments on small numbers of dopants have the potential to be a testing ground for fundamental questions of atomic and molecular physics, such as the maximum negative ionization of a molecule with a given number of positive ions[4,5]. Electron tunneling spectroscopy through isolated dopants has been observed in transport studies[6,7]. In addition, Geim and coworkers identified resonances due to two closely spaced donors, effectively forming donor molecules[8]. Here we present capacitance spectroscopy measurements of silicon donors in a gallium-arsenide heterostructure using a scanning probe technique[9,10]. In contrast to the work of Geim et al., our data show discernible peaks attributed to successive electrons entering the molecules. Hence this work represents the first addition spectrum measurement of dopant molecules. More generally, to the best of our knowledge, this study is the first example of single-electron capacitance spectroscopy performed directly with a scanning probe tip[9].Comment: In press, Nature Physics. Original manuscript posted here; 16 pages, 3 figures, 5 supplementary figure

    Direct observation of micron-scale ordered structure in a two-dimensional electron system

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    We have applied a novel scanned probe method to directly resolve the interior structure of a GaAs/AlGaAs two-dimensional electron system in a tunneling geometry. We find that the application of a perpendicular magnetic field can induce surprising density modulations that are not static as a function of the field. Near six and four filled Landau levels, stripe-like structures emerge with a characteristic wave length ~2 microns. Present theories do not account for ordered density modulations on this length scale.Comment: 5 pages, 4 figures. To appear in Phys. Rev.

    Modifying the surface electronic properties of YBa2Cu3O7-delta with cryogenic scanning probe microscopy

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    We report the results of a cryogenic study of the modification of YBa2Cu3O7-delta surface electronic properties with the probe of a scanning tunneling microscope (STM). A negative voltage applied to the sample during STM tunneling is found to modify locally the conductance of the native degraded surface layer. When the degraded layer is removed by etching, the effect disappears. An additional surface effect is identified using Scanning Kelvin Probe Microscopy in combination with STM. We observe reversible surface charging for both etched and unetched samples, indicating the presence of a defect layer even on a surface never exposed to air.Comment: 6 pages, 4 figures. To appear in Superconductor Science and Technolog

    Modeling Subsurface Charge Accumulation Images of a Quantum Hall Liquid

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    Subsurface Charge Accumulation imaging is a cryogenic scanning probe technique that has recently been used to spatially probe incompressible strips formed in a two-dimensional electron system (2DES) at high magnetic fields. In this paper, we present detailed numerical modeling of these data. At a basic level, the method produces results that agree well with the predictions of models based on simple circuit elements. Moreover, the modeling method is sufficiently advanced to simulate the spatially resolved measurements. By comparing directly the simulations to the experimentally measured data, we can extract quantitatively local electronic features of the 2DES. In particular, we deduce the electron density of states inside the incompressible strips and electrical resistance across them.Comment: 11 pages, 3 figure

    Single-Electron Spectroscopy

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    Contains an introduction, reports on four research projects and a list of publications,Joint Services Electronics Program Grant DAAH04-95-1-0038National Science Foundation Young Investigator AwardU.S. Navy - Office of Naval Research Grant N00014-93-1-063
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