Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator

The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO$_2$) with different back-gate bias configurations, from -8 V to 2 V. The investigation revealed that the performance is significantly affected by TID, with the radiation response being dominated by the charge trapped in the buried oxide

Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics

The long term goal of the CERN Experimental Physics Department R&D on monolithic sensors is the development of sub-100nm CMOS sensors for high energy physics. The first technology selected is the TPSCo 65nm CMOS imaging technology. A first submission MLR1 included several small test chips with sensor and circuit prototypes and transistor test structures. One of the main questions to be addressed was how to optimize the sensor in the presence of significant in-pixel circuitry. In this paper this optimization is described as well as the experimental results from the MLR1 run confirming its effectiveness. A second submission investigating wafer-scale stitching has just been completed. This work has been carried out in strong synergy with the ITS3 upgrade of the ALICE experiment

Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics

The long term goal of the CERN Experimental Physics Department R&D on monolithic sensors is the development of sub-100nm CMOS sensors for high energy physics. The first technology selected is the TPSCo 65nm CMOS imaging technology. A first submission MLR1 included several small test chips with sensor and circuit prototypes and transistor test structures. One of the main questions to be addressed was how to optimize the sensor in the presence of significant in-pixel circuitry. In this paper this optimization is described as well as the experimental results from the MLR1 run confirming its effectiveness. A second submission investigating wafer-scale stitching has just been completed. This work has been carried out in strong synergy with the ITS3 upgrade of the ALICE experiment

Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator

The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO$_{2}$) with different back-gate bias configurations, from -8 V to 2 V. The investigation revealed that the performance is significantly affected by TID, with the radiation response being dominated by the charge trapped in the buried oxide

Strategic R&D Programme on Technologies for Future Experiments - Annual Report 2020

This report summarises the activities and achievements of the strategic R&D programme on technologies for future experiments in the year 2020

Strategic R&D Programme on Technologies for Future Experiments - Annual Report 2021

This report summarises the activities and main achievements of the CERN strategic R&D programme on technologies for future experiments during the year 2021

Annual Report 2022

This report summarises the activities and main achievements of the CERN strategic R&D programme on technologies for future experiments during the year 202

Extension of the R&D Programme on Technologies for Future Experiments

we have conceived an extension of the R&D programme covering the period 2024 to 2028, i.e. again a 5-year period, however with 2024 as overlap year. This step was encouraged by the success of the current programme but also by the Europe-wide efforts to launch new Detector R&D collaborations in the framework of the ECFA Detector R&D Roadmap. We propose to continue our R&D programme with the main activities in essentially the same areas. All activities are fully aligned with the ECFA Roadmap and in most cases will be carried out under the umbrella of one of the new DRD collaborations. The program is a mix of natural continuations of the current activities and a couple of very innovative new developments, such as a radiation hard embedded FPGA implemented in an ASIC based on System-on-Chip technology. A special and urgent topic is the fabrication of Al-reinforced super-conducting cables. Such cables are a core ingredient of any new superconducting magnet such as BabyIAXO, PANDA, EIC, ALICE-3 etc. Production volumes are small and demands come in irregular intervals. Industry (world-wide) is no longer able and willing to fabricate such cables. The most effective approach (technically and financially) may be to re-invent the process at CERN, together with interested partners, and offer this service to the community

Annual Report 2023 and Phase-I Closeout

This report summarises the activities of the CERN strategic R&D programme on technologies for future experiments during the year 2023, and highlights the achievements of the programme during its first phase 2020-2023