Updated measurements of exclusive J/ψ and ψ(2S) production cross-sections in pp collisions at √s = 7 TeV

The differential cross-section as a function of rapidity has been measured for the exclusive production of J/ψ and ψ(2S) mesons in proton–proton collisions at √s = 7 TeV, using data collected by the LHCb experiment, corresponding to an integrated luminosity of 930 pb−1. The cross-sections times branching fractions to two muons having pseudorapidities between 2.0 and 4.5 are measured to be where the first uncertainty is statistical and the second is systematic. The measurements agree with next-to-leading order QCD predictions as well as with models that include saturation effects

Studies of beauty baryon decays to D0ph− and Λ+ch− final states

Decays of beauty baryons to the D0ph− and Λ+ch− final states (where h indicates a pion or a kaon) are studied using a data sample of pp collisions, corresponding to an integrated luminosity of 1.0  fb−1, collected by the LHCb detector. The Cabibbo-suppressed decays Λ0b→D0pK− and Λ0b→Λ+cK− are observed, and their branching fractions are measured with respect to the decays Λ0b→D0pπ− and Λ0b→Λ+cπ−. In addition, the first observation is reported of the decay of the neutral beauty-strange baryon Ξ0b to the D0pK− final state, and a measurement of the Ξ0b mass is performed. Evidence of the Ξ0b→Λ+cK− decay is also reported

Characterization of a n+3C/n-4H SiC heterojunction diode

We report on the fabrication of n+3C/n-4H SiC heterojunction diodes (HJDs) potentially promising the ultimate thermal stability of the junction. The diodes were systematically analyzed by TEM, X-ray diffraction, AFM, and secondary ion mass spectroscopy, indicating the formation of epitaxial 3C-SiC crystal on top of 4H-SiC substrate with continuous interface, low surface roughness, and up to similar to 7 x 10(17) cm(-3) dopant impurity concentration. The conduction band off-set is about 1 V as extracted from CV measurements, while the valence bands of both SiC polytypes are aligned. The HJDs feature opening voltage of 1.65 V, consistent with the barrier height of about 1.5 eV extracted from CV measurement. We finally compare the electrical results of the n+3C/n-4H SiC heterojunction diodes with those featuring Si and Ge doped anodes in order to evaluate current challenges involved in the fabrication of such devices.status: publishe

Effects of Zn/B nanofertilizer on biophysical characteristics and growth of coffee seedlings in a greenhouse

[[abstract]]The effects of Zn/B nanofertilizer on the biophysical characteristics and growth of coffee seedlings in a greenhouse were investigated. Zn/B nanofertilizer was prepared by loading ZnSO4 and H3BO3 on a chitosan nanoparticles emulsion that was prepared by ionic gelation with tripolyphosphate. The nanofertilizer was characterized by TEM, SEM, zeta potential value and size distribution. The nanofertilizer was sprayed on the leaves of coffee seedlings in five different doses of 0, 10, 20, 30 and 40 ppm. Application of the nanofertilizer enhanced the uptake of zinc, nitrogen and phosphorus. The results were found to increase the chlorophyll content and photosynthesis of the coffee. Finally, the nanofertilizer promoted growth of the coffee plants in the leaf area, height of plant and stem diameter. The nanofertilizer seems to be a great potential foliar feed for the growth of coffee and other plants.[[sponsorship]]科技部[[notice]]補正完

Preparation of NPK nanofertilizer based on chitosan nanoparticles and its effect on biophysical characteristics and growth of coffee in green house

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