Tip-Enhanced Stimulated Raman Scattering with Ultra-High-Aspect-Ratio Tips and Confocal Polarization Raman Spectroscopy for Evaluation of Sidewalls in Type II Superlattices FPAs

Actoprobe team had developed custom Tip Enhancement Raman Spectroscopy System (TERS) with specially developed Ultra High Aspect Ratio probes for AFM and TERS measurements for small pixel infrared FPA sidewall characterization. Using this system, we report on stimulated Raman scattering observed in a standard tip-enhanced Raman spectroscopy (TERS) experiment on GaSb materials excited by 637-nm pump laser light. We explain our results by TERS-inherent mechanisms of enormous local field enhancement and by the special design and geometry of the ultra- high-aspect-ratio tips that enabled conditions for stimulated Raman scattering in the sample with greatly enhanced resonance Raman gain when aided by a microcavity to provide feedback mechanism for the Raman emission. The approach has great potential for further, orders-of-magnitude, progress in TERS enhancement by significantly increasing its nonlinear component. We report development of novel class of probes for atomic force microscopy (AFM active optical probe - AAOP) by integrating a laser source and a photodetector monolithically into the AFM probe. The AAOPs are designed to be used in a conventional AFM and would enhance its functionality to include that of the instruments (NSOM, TERS, hybrid AFM)

Confocal Raman Spectroscopy and AFM for Evaluation of Sidewalls in Type II Superlattice FPAs

We propose to utilize confocal Raman spectroscopy combined with high resolution atomic force microscopy (AFM) for nondestructive characterisation of the sidewalls of etched and passivated small pixel (24 μm×24 μm) focal plane arrays (FPA) fabricated using LW/LWIR InAs/GaSb type-II strained layer superlattice (T2SL) detector material. Special high aspect ratio Si and GaAs AFM probes, with tip length of 13 μm and tip aperture less than 7°, allow characterisation of the sidewall morphology. Confocal microscopy enables imaging of the sidewall profile through optical sectioning. Raman spectra measured on etched T2SL FPA single pixels enable us to quantify the non-uniformity of the mesa delineation process

Emergence of Room-Temperature Ferroelectricity at Reduced Dimensions

The enhancement of the functional properties of materials at reduced dimensions is crucial for continuous advancements in nanoelectronic applications. Here, we report that the scale reduction leads to the emergence of an important functional property – ferroelectricity, challenging the long-standing notion that ferroelectricity is inevitably suppressed at the scale of a few nanometers. A combination of theoretical calculations, electrical measurements, and structural analyses provides evidence of room-temperature ferroelectricity in strain-free epitaxial nanometer-thick films of otherwise non-ferroelectric SrTiO3. We show that electrically-induced alignment of naturally existing polar nanoregions is responsible for the appearance of a stable net ferroelectric polarization in these films. This finding can be useful for the development of low-dimensional material systems with enhanced functional properties relevant to emerging nanoelectronic devices

Nanowire Acting as a Superconducting Quantum Interference Device

We present the results from an experimental study of the magneto-transport of superconducting wires of amorphous Indium-Oxide, having widths in the range 40 - 120 nm. We find that, below the superconducting transition temperature, the wires exhibit clear, reproducible, oscillations in their resistance as a function of magnetic field. The oscillations are reminiscent of those which underlie the operation of a superconducting quantum interference device.Comment: 4 pages, 4 figures, 1 tabl

Adsorption-Controlled Growth of BiVO\u3csub\u3e4\u3c/sub\u3e by Molecular-Beam Epitaxy

Single-phase epitaxial films of the monoclinic polymorph of BiVO4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO4 with an atomically abrupt interface and orientation relationship (001)BiVO4 ∥ (001)YSZ with [100]BiVO4 ∥ [100]YSZ. Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 ± 0.1 eV

Isostructural Metal-Insulator Transition in VO\u3csub\u3e2\u3c/sub\u3e

The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. Here, we design and demonstrate an isostructural, purely electronically-driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. It stabilizes a non-equilibrium metallic phase, and leads to an isostructural metal-insulator transition. This discovery will provide insights into correlated phase transitions and may aid the design of device functionalities

Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance

The conductive bridge non-volatile memory technology is an emerging way to replace traditional charge based memory devices for future neural networks and configurable logic applications. An array of the memory devices that fulfills logic operations must be developed for implementing such architectures. A scheme to fabricate these arrays, using ion bombardment through a mask, has been suggested and advanced by us. Performance of the memory devices is studied, based on the formation of vias and damage accumulation due to the interactions of Ar+ ions with GexSe1-x (x=0.2, 0.3 and 0.4) chalcogenide glasses as a function of the ion energy and dose dependence. Blanket films and devices were created to study the structural changes, surface roughness, and device performance. Raman Spectroscopy, Atomic Force Microscopy (AFM), Energy Dispersive X-Ray Spectroscopy (EDS) and electrical measurements expound the Ar+ ions behavior on thin films of GexSe1-x system. Raman studies show that there is a decrease in area ratio between edge-shared to corner-shared structural units, revealing occurrence of structural reorganization within the system as a result of ion/film interaction. AFM results demonstrate a tendency in surface roughness improvement with increased Ge concentration, after ion bombardment. EDS results reveal a compositional change in the vias, with a clear tendency of greater interaction between ions and the Ge atoms, as evidenced by greater compositional changes in the Ge rich films

Microscopy of Mixed Surfaces on Layered Semiconductors

A large number of well-defined hexagonal etch pits is produced on the WSe2 surface by controlled anisotropic corrosion. As a result a mixed surface (combining both ⊥c and ||c components) is created. This surface exhibits photovoltaic properties even better than the atomically smooth van der Waals surface. Measurements of electron beam induced current performed at low temperatures give direct evidence for enhanced current collection of ||c facets. Observations made by transmission electron microscopy and scanning tunneling microscopy show the presence of very low ||c steps on the van der Waals surface

Defect Induced Ferromagnetism in Undoped ZnO Nanoparticles

Undoped ZnO nanoparticles (NPs) with size ∼12 nm were produced using forced hydrolysis methods using diethylene glycol (DEG) [called ZnO-I] or denatured ethanol [called ZnO-II] as the reaction solvent; both using Zn acetate dehydrate as precursor. Both samples showed weak ferromagnetic behavior at 300 K with saturation magnetization Ms = 0.077 ± 0.002 memu/g and 0.088 ± 0.013 memu/g for ZnO-I and ZnO-II samples, respectively. Fourier transform infrared(FTIR) spectra showed that ZnO-I nanocrystals had DEG fragments linked to their surface. Photoluminescence (PL) data showed a broad emission near 500 nm for ZnO-II which is absent in the ZnO-I samples, presumably due to the blocking of surface traps by the capping molecules. Intentional oxygen vacancies created in the ZnO-I NPs by annealing at 450 °C in flowing Ar gas gradually increased Ms up to 90 min and x-ray photoelectron spectra (XPS) suggested that oxygen vacancies may have a key role in the observed changes in Ms. Finally, PL spectra of ZnO showed the appearance of a blue/violet emission, attributed to Zn interstitials,whose intensity changes with annealing time, similar to the trend seen for Ms. The observed variation in the magnetization of ZnO NP with increasing Ar annealing time seems to depend on the changes in the number of Zn interstitials and oxygen vacancies