Ecological distribution conflicts as forces for sustainability

Can ecological distribution conflicts turn into forces for sustainability? This overview paper addresses in a systematic conceptual manner the question of why, through whom, how, and when conflicts over the use of the environment may take an active role in shaping transitions toward sustainability. It presents a conceptual framework that schematically maps out the linkages between (a) patterns of (unsustainable) social metabolism, (b) the emergence of ecological distribution conflicts, (c) the rise of environmental justice movements, and (d) their potential contributions for sustainability transitions. The ways how these four processes can influence each other are multi-faceted and often not a foretold story. Yet, ecological distribution conflicts can have an important role for sustainability, because they relentlessly bring to light conflicting values over the environment as well as unsustainable resource uses affecting people and the planet. Environmental justice movements, born out of such conflicts, become key actors in politicizing such unsustainable resource uses, but moreover, they take sometimes also radical actions to stop them. By drawing on creative forms of mobilizations and diverse repertoires of action to effectively reduce unsustainabilities, they can turn from ‘victims’ of environmental injustices into ‘warriors’ for sustainability. But when will improvements in sustainability be lasting? By looking at the overall dynamics between the four processes, we aim to foster a more systematic understanding of the dynamics and roles of ecological distribution conflicts within sustainability processes

From the Anthropocene to mutual thriving: An Agenda for higher education in the Ecozoic

Higher education in the global North, and exported elsewhere, is complicit in driving the planet\u27s socio-ecological crises by teaching how to most effectively marginalize and plunder Earth and human communities. As students and activists within the academic system, we take a firm stand to arrest this cycle, and to redirect education toward teaching how to create conditions for all life to thrive. In this paper, we articulate a research and education agenda for co-constructing knowledge and wisdom, and propose shifts in the \u27ologies from the current, destructive modes to intended regenerative counterparts. We offer to shift from an ontology of separation to that of interconnectedness; from an epistemology of domination to that of egalitarian relationship; and from an axiology of development to that of plural values for world- and meaning-making. Such paradigm shifts reflect the foundational aspirations of the consilient transdiscipline of ecological economics. We analyze several introductory university textbooks in economics, law, and natural sciences, to demonstrate how destructive \u27ologies are taught in North American universities, and how such teaching implicitly undermines critical inquiry and effective challenge. Our strategy for change is to provide a new theoretical framework for education: the regenerative \u27ologies of the Ecozoic\u27, based on biophysicality, embedded relationality, pluralism, and the sustainable well-being of all members in the community of life

Correction to: Ecological distribution conflicts as forces for sustainability: an overview and conceptual framework

The article Ecological distribution conflicts as forces for sustainability: an overview and conceptual framework, written by Arnim Scheidel, Leah Temper, Federico Demaria and Joan Martínez‑Alier was originally published electronically on the publisher’s internet portal (currently SpringerLink) on 13 December 2017 without open access. With the author(s)’ decision to opt for Open Choice the copyright of the article changed on 13 December 2017 to © The Author(s) 2017 and the article is forthwith distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/ by/4.0/), which permits use, duplication, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made. The original article was corrected

A perspective on radical transformations to sustainability: resistances, movements and alternatives

A transformation to sustainability calls for radical and systemic societal shifts. Yet what this entails in practice and who the agents of this radical transformation are require further elaboration. This article recenters the role of environmental justice movements in transformations, arguing that the systemic, multi-dimensional and intersectional approach inherent in EJ activism is uniquely placed to contribute to the realization of equitable sustainable futures. Based on a perspective of conflict as productive, and a “conflict transformation” approach that can address the root issues of ecological conflicts and promote the emergence of alternatives, we lay out a conceptual framework for understanding transformations through a power analysis that aims to confront and subvert hegemonic power relations; that is, multi-dimensional and intersectional; balancing ecological concerns with social, economic, cultural and democratic spheres; and is multi-scalar, and mindful of impacts across place and space. Such a framework can help analyze and recognize the contribution of grassroots EJ movements to societal transformations to sustainability and support and aid radical transformation processes. While transitions literature tends to focus on artifacts and technologies, we suggest that a resistance-centred perspective focuses on the creation of new subjectivities, power relations, values and institutions. This recenters the agency of those who are engaged in the creation and recuperation of ecological and new ways of being in the world in the needed transformation

Влияние особенностей PECVD процессов осаждения SiNx на электрические параметры структур SiNx/AlGaN/GaN

In this work, we studied the influence of the processes of plasma-chemical deposition of SiNx films on the electrical parameters of the dielectric/AlGaN/GaN structure. The effect of the composition of the formed films, the effect of additional surface treatment of heterostructures in nitrogen plasma prior to dielectric deposition, as well as the effect of the RF bias supply during this treatment on the C-V and I-V characteristics of the SiNx/AlGaN/GaN structures were analyzed. It was found that for films with a ratio of nitrogen and silicon concentrations of 60 % and 40 %, as well as with an increased oxygen content, a decrease in the value of a fixed positive charge in these structures is characteristic, but the appearance of current pulsations is observed on the I-V characteristics of the structures. It was revealed how the modes of the plasma chemistry process affect such parameters of oscillations as the period, amplitude, length of the section of the I-V characteristic, where oscillations are observed. A possible explanation of the reasons for the appearance of characteristic pulsations is proposed. It has been established that the additional action of nitrogen plasma on the surface of the heterostructure before the monosilane is introduced into the chamber leads to a change in the magnitude and sign of the fixed charge and to a decrease in the concentration of free carriers in the channel of a two-dimensional gas of SiNx/AlGaN/GaN heterostructures. It is shown experimentally how the technological features of the deposition and surface preparation processes can affect the electrical parameters of the formed heterostructures.Исследовано влияние процессов плазмохимического осаждения (PECVD) пленок SiNx на электрические параметры структуры диэлектрик/АlGaN/GaN. Дан анализ влияния состава формируемых пленок, воздействия дополнительной обработки поверхности гетероструктур в плазме азота перед осаждением диэлектрика, а также влияния подачи ВЧ-смещения при такой обработке на особенности С—V- и I—V-характеристик структур SiNx/АlGaN/GaN. Установлено, что для пленок с соотношением концентраций азота и кремния 60 и 40 %, а также с повышенным содержанием кислорода характерно уменьшение фиксированного положительного заряда в этих структурах, однако, на I—V-характеристиках структур наблюдается появление пульсаций тока. Выявлено как режимы процесса плазмохимии влияют на такие параметры осцилляций, как период, амплитуда, длина участка I—V-характеристики, на котором наблюдаются осцилляции. Предложено возможное объяснение причин появления характерных пульсаций. Установлено, что дополнительное воздействие азотной плазмы на поверхность гетероструктуры до напуска в камеру моносилана приводит к изменению величины и знака фиксированного заряда, а также к уменьшению концентрации свободных носителей в канале двумерного газа гетероструктур SiNx/АlGaN/GaN. Экспериментально показано, как технологические особенности процессов PECVD осаждения и подготовки поверхности могут влиять на электрические параметры формируемых гетероструктур

The supply chain of violence

Every year, more people are killed defending the environment than are soldiers from the United Kingdom and Australia on overseas deployments in war zones combined. During the last 15 years, the number of both deaths of environmental defenders, and the countries where they occur, have increased. Recorded deaths have increased from two per week to four per week over this period. These deaths are primarily related to conflict over natural resources, across a range of sectors. Of 683 total deaths, >230 were related to mining and agribusiness between 2014 and 2017. We find that rule of law and corruption indices are closely linked to patterns of killings. Using spatial data, we investigate the drivers of these conflicts and violence and seek to identify who may be most at risk and why. We argue that businesses, investors and national governments at both ends of the chain of violence need to be more accountable

ВЛИЯНИЕ СВОЙСТВ СЛОЯ КРЕМНИЯ НА ЕМКОСТНЫЕ ПАРАМЕТРЫ МДП/КНС–СТРУКТУР

The influence of the epitaxial layer features and so silicon-sapphire interface in SOS-structures on capacitance parameters of MIS-structures formed on SOS with submicron silicon layers were investigated in this article. Both standard SOS-structures with 0.3 μk silicon n-type layer and analog SOS-structures with the blastic silicon layer amorphizated by the oxygen ion implantation with following high-temperature annealing. The two different types of test MIS-structures with 30 nm gate oxide, polysilicon gate and metallic contacts were fabricated. The strong difference in the capacitance characteristics for standard SOS and SOS with recrystallization silicon layer was disclosed in depletion region. It was revealed the strong frequency dependence of capacitance characteristics for the test MIS-structures formed on almost all SOS-structures. It was shown that the character of the test structures C—V-curves were defined by dimension and configuration of the silicon layer as well as the deep compensate levels concentration in layer near silicon-sapphire interface. Particularly it was shown that big changes of the frequency-capacitance dependences at transition from the tests formed on standard SOS to tests on SOS with blastic silicon layer were determined by great concentration of deep compensate centers in layer near interface for standard SOS. It was shown that the recrystallization of silicon layer by oxygen ion implantation may lead to appearance of the centers, formed donor levels into silicon band gap and appearance of the frequency-capacitance dependences in depletion region of such SOS-structures.Исследовано влияние особенностей эпитаксиального слоя кремния, а также самой границы кремний—сапфир в структурах кремний-на-сапфире (КНС) на емкостные параметры МДП-структур, сформированных на КНС с субмикронными слоями кремния. В процессе исследований выявлено наличие сильной частотной зависимости емкостных характеристик тестовых МДП−структур, формируемых на таких КНС. Экспериментально показано, что С—V-характеристики тестовых структур в большей степени определяются размерами и конфигурацией кремниевого слоя МДП-структур а также концентрацией глубоких компенсирующих уровней в пограничном слое у границы кремний—сапфир. В частности, показано, что значительные изменения частотно-емкостных зависимостей при переходе от тестов, сформированных на стандартных КНС, к тестам на КНС с перекристаллизованным слоем кремния связаны с наличием большой концентрации глубоких компенсирующих уровней в пограничном слое у границы кремний—сапфир для стандартных КНС-структур

Влияние технологических факторов на характеристики омических контактов мощных AlGaN/GaN/SiC–HEMT

Abstract. In this paper are considers the effect of the microrelief, dislocation structure and other defects of the epitaxial layers of the source and drain regions of the nitride HEMT transistors on the parameters of the formed ohmic contacts. The studies were carried out directly on high−power microwave transistors made of GaN/AlGaN/GaN/SiC heterostructures. Ohmic burning contacts were formed using the compositions Ti—Al—Mo—Au and Ti—Al—Ni—Au. To estimation the structural features of the contact areas, the surface microrelief at the interface of the burned contact/AlGaN and the defects formed on its surface was studied. It is shown that the resistance of the source and drain regions is largely determined by the surface microstructure at the boundary. Experimentally shown is the formation of a conducting layer in AlGaN under the ohmic contacts. The possibility of the formation of a new type of structural defects with a high aspect ratio in the contact and active areas of the devices during the formation of ohmic burned contacts is demonstrated. It is shown that the appearance of high densities of such defects leads to an increase of the device leakage currents.Аннотация. Рассмотрено влияние микрорельефа, дислокационной структуры и других дефектов эпитаксиальных слоев в областях истока и стока нитридных транзисторов с высокой подвижностью электронов (НЕМТ) на параметры формируемых омических контактов. Исследования проведены непосредственно на кристаллах мощных СВЧ−транзисторов, изготовленных на гетероструктурах GaN/AlGaN/GaN/SiC. Омические вжигаемые контакты сформированы с использованием композиций Ti—Al—Mo—Au и Ti—Al—Ni—Au. Для оценки структурных особенностей контактных областей исследован микрорельеф поверхности на границе раздела «вжигаемый контакт/AlGaN» и сформированные на ней дефекты. Установлено, что сопротивление областей исток и сток в значительной мере определяются микроструктурой поверхности на границе. Экспериментально показано формирование проводящего слоя в AlGaN под вжигаемым омическим контактом. Продемонстрирована возможность образования нового вида структурных дефектов с высоким аспектным отношением в контактных и активных областях приборов при формировании омических вжигаемых контактов. Показано, что появление высоких плотностей такого рода дефектов приводит к увеличению токов утечки приборов

ИССЛЕДОВАНИЕ ГЕТЕРОСТРУКТУР МЕТОДОМ РЕНТГЕНОВСКОЙ ОДНОКРИСТАЛЬНОЙ ДИФРАКТОМЕТРИИ

The capabilities of an XMD−300 diffractometer were explored in three measurement setups, i.e. sliding primary beam, diffracted primary beam, θ–2θ setup for the crystalline perfection investigations of semiconductor heterostructures (SOS, SOI, AlGaN/GaN/Si, ion implanted silicon layers). We show that measurementsusing these three setups in scattered radiation and at direct validity of Bragg’s diffraction condition allowed receiving diffraction interference patterns simultaneously from the crystal lattice of several layers and interferential picks of maximum intensity for each individual layer.Рассмотрены возможности использования дифрактометра XMD−300 при трех схемах съемки: скользящего первичного пучка, скользящего дифрагированного пучка, схемы θ—2θ для исследования кристаллического совершенства полупроводниковых гетероструктур (кремний−на−сапфире, кремний−на−изоляторе, ионно−легированные слои кремния, структуры AlGaN/GaN/Si). Показано, что измерения с использованием трех схем в рассеянном излучении и при точном соблюдении условия брегговской дифракции позволяют получить интерференционную картину дифракции одновременно от кристаллических решеток нескольких слоев гетероструктуры и интерференционные пики максимальной интенсивностидля каждого отдельного слоя

Пленки ALD Al2O3, SiNx и SiON в качестве пассивирующих покрытий в AlGaN/GaN HEМТ

The effect of passivating ALD Al2O3, SiNx and SiON coatings of different thicknesses on the change in the charge and density of states of AlGaN/GaN heterostructures are studied. The electrophysical parameters of the structures were evaluated using C-V characteristics measured at different frequencies and I-V characteristics. Based on the considered zone diagrams of structures with different control voltages and the evaluation of the elemental composition of the films by Auger spectroscopy, it was shown that the cause of the formation of a large positive charge upon deposition of ALD Al2O3 and SiNx films is the appearance of an additional piezoelectric charge in the AlGaN buffer layer. It is shown that the use of SiON films with an oxygen concentration of more than 3% does not lead to the formation of an additional positive charge, but can cause current fluctuations when measuring I-V characteristics. A possible mechanism of carrier transport in the SCR region, leading to such fluctuations, is considered.В полевых транзисторах на основе широкозонных нитридных гетероструктур широко используются диэлектрические слои в качестве как одного из основных элементов в активных областях приборов, так и пассивирующих слоев. К диэлектрикам предъявляются жесткие требования по высокой диэлектрической проницаемости, большой ширине запрещенной зоны, сплошности покрытия. Кроме того, пленки должны выдерживать высокие электрические поля и иметь низкую плотность поверхностных состояний на границе диэлектрик/полупроводник. Для этих целей в качестве эффективных покрытий обычно используются низкотемпературные пленки, выращенные с помощью плазмохимического осаждения из газовой фазы, атомно-слоевого осаждения (ALD) и плазменно-стимулированного осаждения. Для гетероструктур AlGaN/GaN наиболее перспективными и чаще всего используемые являются пленки ALD Al2О3, SiNх (Si3N4), SiON, ALD AlN.Исследовано влияние пассивирующих покрытий ALD Al2O3, SiNx и SiON разной толщины на изменение заряда и плотности состояний гетероструктур AlGaN/GaN. Электрофизические параметры структур оценивались с помощью C—V-характеристик, измеренных на разных частотах, и I—V-характеристик. На основании рассмотренных зонных диаграмм структур при разном управляющем напряжении и оценки элементного состава пленок методом Оже-спектроскопии показано, что причиной образования большого положительного заряда при нанесении пленок ALD Al2O3 и SiNx является возникновение дополнительного пьезоэлектрического заряда в буферном слое AlGaN. Показано, что использование пленок SiON с концентрацией кислорода в них более 3 % не приводит к формированию дополнительного положительного заряда, но может вызывать флуктуации тока при измерении I—V-характеристик. Рассмотрен возможный механизм транспорта носителей в области пространственного заряда, приводящий к таким флуктуациям