Observation of Fermi-energy dependent unitary impurity resonances in a strong topological insulator Bi_2Se_3 with scanning tunneling spectroscopy

Scanning tunneling spectroscopic studies of Bi_2Se_3 epitaxial films on Si (111) substrates reveal highly localized unitary impurity resonances associated with non-magnetic quantum impurities. The strength of the resonances depends on the energy difference between the Fermi level (E_F) and the Dirac point (E_D) and diverges as E_F approaches E_D. The Dirac-cone surface state of the host recovers within ~ 2Å spatial distance from impurities, suggesting robust topological protection of the surface state of topological insulators against high-density impurities that preserve time reversal symmetry

Scanning Tunneling Spectroscopic Studies of the Effects of Dielectrics and Metallic Substrates on the Local Electronic Characteristics of Graphene

Atomically resolved imaging and spectroscopic characteristics of graphene grown by chemical vapor deposition (CVD) on copper foils are investigated and compared with those of mechanical exfoliated graphene on SiO_2. For exfoliated graphene, the local spectral deviations from ideal behavior may be attributed to strain induced by the SiO_2 substrate. For CVD grown graphene, the lattice structure appears strongly distorted by the underlying copper, with regions in direct contact with copper showing nearly square lattices whereas suspended regions from thermal relaxation exhibiting nearly honeycomb or hexagonal lattice structures. The electronic density of states (DOS) correlates closely with the atomic arrangements of carbon, showing excess zero-bias tunneling conductance and nearly energy-independent DOS for strongly distorted graphene, in contrast to the linearly dispersive DOS for suspended graphene. These results suggest that graphene can interact strongly with both metallic and dielectric materials in close proximity, leading to non-negligible modifications to the electronic properties

Observation of vortices and hidden pseudogap from scanning tunneling spectroscopic studies of electron-doped cuprate superconductor Sr0.9La0.1CuO2Sr_{0.9}La_{0.1}CuO_2

We present the first demonstration of vortices in an electron-type cuprate superconductor, the highest $T_c$ (= 43 K) electron-type cuprate $Sr_{0.9}La_{0.1}CuO_2$. Our spatially resolved quasiparticle tunneling spectra reveal a hidden low-energy pseudogap inside the vortex core and unconventional spectral evolution with temperature and magnetic field. These results cannot be easily explained by the scenario of pure superconductivity in the ground state of high-$T_c$ superconductivity.Comment: 6 pages, 4 figures. Two new graphs have been added into Figure 2. Accepted for publication in Europhysics Letters. Corresponding author: Nai-Chang Yeh (E-mail: [email protected]

Evidence for Strain-Induced Local Conductance Modulations in Single-Layer Graphene on SiO_2

Graphene has emerged as an electronic material that is promising for device applications and for studying two-dimensional electron gases with relativistic dispersion near two Dirac points. Nonetheless, deviations from Dirac-like spectroscopy have been widely reported with varying interpretations. Here we show evidence for strain-induced spatial modulations in the local conductance of single-layer graphene on SiO_2 substrates from scanning tunneling microscopic (STM) studies. We find that strained graphene exhibits parabolic, U-shaped conductance vs bias voltage spectra rather than the V-shaped spectra expected for Dirac fermions, whereas V-shaped spectra are recovered in regions of relaxed graphene. Strain maps derived from the STM studies further reveal direct correlation with the local tunneling conductance. These results are attributed to a strain-induced frequency increase in the out-of-plane phonon mode that mediates the low-energy inelastic charge tunneling into graphene

Scanning Tunneling Spectroscopic Studies of the Low-Energy Quasiparticle Excitations in Cuprate Superconductors

We report scanning tunneling spectroscopic (STS) studies of the low-energy quasiparticle excitations of cuprate superconductors as a function of magnetic field and doping level. Our studies suggest that the origin of the pseudogap (PG) is associated with competing orders (COs), and that the occurrence (absence) of PG above the superconducting (SC) transition T_c is associated with a CO energy Δ_(CO) larger (smaller) than the SC gap Δ_(SC). Moreover, the spatial homogeneity of Δ_(SC) and Δ_(CO) depends on the type of disorder in different cuprates: For optimally and under-doped YBa_2Cu_3O_(7−δ) (Y-123), we find that Δ_(SC) < Δ_(CO) and that both Δ_(SC) and Δ(CO) exhibit long-range spatial homogeneity, in contrast to the highly inhomogeneous STS in Bi_2Sr_2CaCu_2O_(8+x) (Bi-2212). We attribute this contrast to the stoichiometric cations and ordered apical oxygen in Y-123, which differs from the non-stoichiometric Bi-to-Sr ratio in Bi-2212 with disordered Sr and apical oxygen in the SrO planes. For Ca-doped Y-123, the substitution of Y by Ca contributes to excess holes and disorder in the CuO_2 planes, giving rise to increasing inhomogeneity, decreasing Δ_(SC) and Δ_(CO), and a suppressed vortex-solid phase. For electron-type cuprate Sr_(0.9)La_(0.1)CuO_2 (La-112), the homogeneous Δ_(SC) and Δ_(CO) distributions may be attributed to stoichiometric cations and the absence of apical oxygen, with Δ_(CO) < Δ_(SC) revealed only inside the vortex cores. Finally, the vortex-core radius (ξ_(halo)) in electron-type cuprates is comparable to the SC coherence length ξ_(SC), whereas ξ_(halo) ∼ 10ξ_(SC) in hole-type cuprates, suggesting that ξ_(halo) may be correlated with the CO strength. The vortex-state irreversibility line in the magnetic field versus temperature phase diagram also reveals doping dependence, indicating the relevance of competing orders to vortex pinning

Nanoscale strain engineering of giant pseudo-magnetic fields, valley polarization, and topological channels in graphene

The existence of nontrivial Berry phases associated with two inequivalent valleys in graphene provides interesting opportunities for investigating the valley-projected topological states. Examples of such studies include observation of anomalous quantum Hall effect in monolayer graphene, demonstration of topological zero modes in “molecular graphene” assembled by scanning tunneling microscopy, and detection of topological valley transport either in graphene superlattices or at bilayer graphene domain walls. However, all aforementioned experiments involved nonscalable approaches of either mechanically exfoliated flakes or atom-by-atom constructions. Here, we report an approach to manipulating the topological states in monolayer graphene via nanoscale strain engineering at room temperature. By placing strain-free monolayer graphene on architected nanostructures to induce global inversion symmetry breaking, we demonstrate the development of giant pseudo-magnetic fields (up to ~800 T), valley polarization, and periodic one-dimensional topological channels for protected propagation of chiral modes in strained graphene, thus paving a pathway toward scalable graphene-based valleytronics