Laboratory study of electromagnetic initiation of slip

Recently Russian seismologists reported the triggering effect of MHD soundings on microseismic activity in the Central Asia test area.The paper focuses on an experimental test of the possibility of triggering the mechanical instability of a system that is close to critical state by a series of electromagnetic pulses.The mechanical system consisted of two pieces of rock;the upper piece can slip on the fixed supporting sample if the latter one is tilted up to the critical angle.In this state,the triggering of mechanical instability by some weak impact such as electrical pulse became more probable.The slope of support in the experiment is an analogue of tectonic stress in natural conditions.The preliminary experiments,carried out in a dry environment,at the humidity of atmosphere 30-50%,show that a strong EM-pulse induces sliding of a sample of rock (granite,basalt,labradorite)placed on the supporting sample which is inclined at the slope close to,but less than,the critical angle with a probability 0.07

Facilitating Next-Generation Pre-Exposure Prophylaxis Clinical Trials Using HIV Recent Infection Assays: A Consensus Statement from the Forum HIV Prevention Trial Design Project

Standard-of-care HIV pre-exposure prophylaxis (PrEP) is highly efficacious, but uptake of and persistence on a daily oral pill is low in many settings. Evaluation of alternate PrEP products will require innovation to avoid the unpractically large sample sizes in noninferiority trials. We propose estimating HIV incidence in people not on PrEP as an external counterfactual to which on-PrEP incidence in trial subjects can be compared. HIV recent infection testing algorithms (RITAs), such as the limiting antigen avidity assay plus viral load used on specimens from untreated HIV positive people identified during screening, is one possible approach. Its feasibility is partly dependent on the sample size needed to ensure adequate power, which is impacted by RITA performance, the number of recent infections identified, the expected efficacy of the intervention, and other factors. Screening sample sizes to support detection of an 80% reduction in incidence for 3 key populations are more modest, and comparable to the number of participants in recent phase III PrEP trials. Sample sizes would be significantly larger in populations with lower incidence, where the false recency rate is higher or if PrEP efficacy is expected to be lower. Our proposed counterfactual approach appears to be feasible, offers high statistical power, and is nearly contemporaneous with the on-PrEP population. It will be important to monitor the performance of this approach during new product development for HIV prevention. If successful, it could be a model for preventive HIV vaccines and prevention of other infectious diseases

Laboratory study of electromagnetic initiation of slip

Recently Russian seismologists reported the triggering effect of MHD soundings on microseismic activity in the Central Asia test area.The paper focuses on an experimental test of the possibility of triggering the mechanical instability of a system that is close to critical state by a series of electromagnetic pulses.The mechanical system consisted of two pieces of rock;the upper piece can slip on the fixed supporting sample if the latter one is tilted up to the critical angle.In this state,the triggering of mechanical instability by some weak impact such as electrical pulse became more probable.The slope of support in the experiment is an analogue of tectonic stress in natural conditions.The preliminary experiments,carried out in a dry environment,at the humidity of atmosphere 30-50%,show that a strong EM-pulse induces sliding of a sample of rock (granite,basalt,labradorite)placed on the supporting sample which is inclined at the slope close to,but less than,the critical angle with a probability 0.07

Plant and fungal use in Tusheti, Khevsureti, and Pshavi, Sakartvelo (Republic of Georgia), Caucasus

In this study, we documented traditional plant use in Tusheti, Khevsureti, and Pshavi and hypothesized that (i) plant use knowledge in general would be higher in isolated high elevation communities, and that (ii) use of home gardens would be much more restricted to lower elevation settings. Fieldwork was conducted in Khevsureti, Pshavi, and Tusheti. Interviews using semi-structured questionnaires were conducted with 74 participants. In the present study, we encountered 317 plant species belonging to 203 genera of 80 families being used in the research region. Of these, 197 species were exclusively wild-harvested, 73 were grown in homegardens, and 47 were both grown in gardens and sourced in the wild. The ordinations in plant-space and in use-space were significantly fit by elevation of informant community, and community itself. Age and gender did not significantly fit the distribution of informants across either plant-space or use-space, respectively. Number of use-reports was highest across all communities in the food and medicinal use-categories, and informant consensus. Species with especially high use-diversity (UD) tended to be woody species although. Species with high use-value (UV) were mostly managed/domesticated species from home orchards, gardens, or farms. Plant species, and uses, found in our study, showed clear relations to the wider Eurasian cultural complex. The species number found was, however, far higher than in any published study from either the region or the wiser Mediterranean and Eurasia. The maintenance of home gardens in Georgia serves as socio-ecological memory. While the great variety of plant species used in the Georgian Caucasus might provide a reservoir for food security climate change is starting to affect both natural floristic diversity and gardens both in the Caucasus as well as continent wide

დინამიკური ეგზოგენური პროცესების ციფრული რეგისტრაციის აკუსტიკური სისტემა

დამზადებულია ციფრული აკუსტიკური სისტემა მასების გადანაცვლებით (ღვარცოფები, მეწყერები, ზვავები და ა.შ.) გამოწვეული ხმაურის დასაფიქსირებლად, რომელიც შეიძლება გამოყენებულ იქნას განგაშის სისტემაში

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

International audienceWhich the actual critical electrical field of the ultra-wide bandgap semiconductor β-Ga2O3 is? Even that it is usual to find in the literature a given value for the critical field of wide and ultra-wide semiconductors such as SiC (3 MV/cm), GaN (3.3 MV/cm), β-Ga2O3 (~8 MV/cm) and diamond (10 MV/cm), this value actually depends on intrinsic and extrinsic factors such as the bandgap energy, material residual impurities or introduced dopants. Indeed, it is well known from 1950’s that reducing the residual doping (NB) of the semiconductor layer increases the breakdown voltage capability of a semiconductor media (e.g. as NB-3/4 by using the Fulop’s approximation for an abrupt junction). A key limitation is, therefore, the residual donor/acceptor concentration generally found in these materials. Here, we report that doping with amphoteric Zinc a p-type β-Ga2O3 thin films shortens free carrier mean free path (0.37nm), resulting in the ultra-high critical electrical field of 13.2 MV/cm. Therefore, the critical breakdown field can be, at least, four times larger for the emerging Ga2O3 power semiconductor as compared to SiC and GaN. We further explain these wide-reaching experimental facts by using theoretical approaches based on the impact ionization microscopic theory and thermodynamic calculations

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga₂O₃

Which the actual critical electrical field of the ultra-wide bandgap semiconductor β-Ga₂O₃ is? Even that it is usual to find in the literature a given value for the critical field of wide and ultra-wide semiconductors such as SiC (3 MV/cm), GaN (3.3 MV/cm), β-Ga₂O₃ (~8 MV/cm) and diamond (10 MV/cm), this value actually depends on intrinsic and extrinsic factors such as the bandgap energy, material residual impurities or introduced dopants. Indeed, it is well known from 1950's that reducing the residual doping (N) of the semiconductor layer increases the breakdown voltage capability of a semiconductor media (e.g. as N by using the Fulop's approximation for an abrupt junction). A key limitation is, therefore, the residual donor/acceptor concentration generally found in these materials. Here, we report that doping with amphoteric Zinc a p-type β-Ga₂O₃ thin films shortens free carrier mean free path (0.37 nm), resulting in the ultra-high critical electrical field of 13.2 MV/cm. Therefore, the critical breakdown field can be, at least, four times larger for the emerging Ga₂O₃ power semiconductor as compared to SiC and GaN. We further explain these wide-reaching experimental facts by using theoretical approaches based on the impact ionization microscopic theory and thermodynamic calculations