From Hopping to Ballistic Transport in Graphene-Based Electronic Devices

This thesis describes electronic transport experiments in graphene from the hopping to the ballistic regime. The first experiment studies dual-gated bilayer graphene devices. By applying an electric field with these dual gates, we can open a band gap in bilayer graphene and observe an increase in resistance of over six orders of magnitude as well as a strongly non-linear behavior in the transport characteristics. A temperature-dependence study of resistance at large electric field at the charge neutrality point shows the change in the transport mechanism from a hopping dominated regime at low temperature to a diffusive regime at high temperature.Physic

Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields

We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong non-linear behavior in the transport characteristics. The effective transport gap is typically two orders of magnitude smaller than the optical band gaps reported by infrared spectroscopy studies. Detailed temperature dependence measurements shed light on the different transport mechanisms in different temperature regimes.Comment: 4 pages, 3 figure

Quantum Hall Effect, Screening and Layer-Polarized Insulating States in Twisted Bilayer Graphene

We investigate electronic transport in dual-gated twisted bilayer graphene. Despite the sub-nanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of each layer. We demonstrate that the filling factor of each layer can be independently controlled via the dual gates, which we use to induce Landau level crossings between the layers. By analyzing the gate dependence of the Landau level crossings, we characterize the finite inter-layer screening and extract the capacitance between the atomically-spaced layers. At zero filling factor, we observe magnetic and displacement field dependent insulating states, which indicate the presence of counter-propagating edge states with inter-layer coupling.Comment: 4 pages, 3 figure

Magnetoconductance Oscillations in Electron-hole Hybridization Gaps and Valley Splittings in Tetralayer Graphene

We investigate magnetotransport on Bernal-stacked tetralayer graphene whose band structure consists of two massive subbands with different effective masses. Under a finite displacement field, we observe valley splitting of Landau levels (LLs) only in the light-mass subband, consistent with a tight-binding model. At low density, we find unexpected magnetoconductance oscillations in bulk gaps which originate from a series of hybridizations between electron-like and hole-like LLs due to band inversion in tetralayer graphene. In contrast to a trivial LL quantization gap, these inverted hybridization gaps can lead to a change in number of edge states which explains the observed oscillations.Comment: Accepted for publication in PR

BN/Graphene/BN Transistors for RF Applications

In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate dielectric. Field effect transistors (FETs) using a bilayer graphene channel have been fabricated with a gate length LG=450 nm. A current density in excess of 1 A/mm and DC transconductance close to 250 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure, giving a current-gain cut-off frequency fT=33 GHz and an fT.LG product of 15 GHz.um. The improved performance obtained by the BN/Graphene/BN structure is very promising to enable the next generation of high frequency graphene RF electronics.Comment: 3 pages, 5 figures, accepted for publication in IEEE Electron Device Letter

Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

Graphene is a new material showing high promise in optoelectronics, photonics, and energy-harvesting applications. However, the underlying physical mechanism of optoelectronic response has not been established. Here, we report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that non-local hot-carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This novel regime, which features a long-lived and spatially distributed hot carrier population, may open the doorway for optoelectronic technologies exploiting efficient energy transport at the nanoscale.Comment: 19 pages, 4 figure

Relaxation and Dephasing in a Two-Electron 13C^{13}C Nanotube Double Quantum Dot

We use charge sensing of Pauli blockade (including spin and isospin) in a two-electron $^{13}C$ nanotube double quantum dot to measure relaxation and dephasing times. The relaxation time $T_1$ first decreases with a parallel magnetic field and then goes through a minimum in a field of $1.4 T$. We attribute both results to the spin-orbit-modified electronic spectrum of carbon nanotubes, which at high field enhances relaxation due to bending-mode phonons. The inhomogeneous dephasing time $T_2^*$ is consistent with previous data on hyperfine coupling strength in $^{13}C$ nanotubes.PhysicsOther Research Uni

Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene

We investigate electronic transport in high mobility (\textgreater 100,000 cm$^2$/V$\cdot$s) trilayer graphene devices on hexagonal boron nitride, which enables the observation of Shubnikov-de Haas oscillations and an unconventional quantum Hall effect. The massless and massive characters of the TLG subbands lead to a set of Landau level crossings, whose magnetic field and filling factor coordinates enable the direct determination of the Slonczewski-Weiss-McClure (SWMcC) parameters used to describe the peculiar electronic structure of trilayer graphene. Moreover, at high magnetic fields, the degenerate crossing points split into manifolds indicating the existence of broken-symmetry quantum Hall states.Comment: Supplementary Information at http://jarilloherrero.mit.edu/wp-content/uploads/2011/04/Supplementary_Taychatanapat.pd