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Charged exciton emission at 1.3 m from single InAs quantum dots grown by metalorganic chemical vapor deposition
We have studied the emission properties of self-organized InAs quantum dots
(QDs) grown in an InGaAs quantum well by metalorganic chemical vapor
deposition. Low-temperature photoluminescence spectroscopy shows emission from
single QDs around 1300 nm; we clearly observe the formation of neutral and
charged exciton and biexciton states, and we obtain a biexciton binding energy
of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV,
indicating strong confinement.Comment: 3 pages, 3 figures, submitted AP
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