4 research outputs found

    Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells

    No full text
    Self-assembledIn₀.₅Ga₀.₅As/GaAsquantum dotsolar cell (QDSC) was grown by metal organic chemical vapor deposition. Systematic measurements of dark current versus voltage (I-V) characteristics were carried out from 30 to 310 K. Compared with the reference GaAssolar cell, the QDSC exhibits larger dark current however its ideality factor (n) was smaller, which cannot be straightly interpreted by the conventional diode models. These results are important for the fundamental understanding of QDSC properties and further implementation of new solar cell designs for improved efficiency.The authors would like to acknowledge financial support from the Australian Research Council and facility support from the Australian National Fabrication Facility ACT node

    The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties

    No full text
    An analysis of the temperature dependent dark current and spectral response characteristics of an In0.5Ga0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells
    corecore