Theory of Spin Torque Assisted Thermal Switching of Single Free Layer

The spin torque assisted thermal switching of the single free layer was studied theoretically. Based on the rate equation, we derived the theoretical formulas of the most likely and mean switching currents of the sweep current assisted magnetization switching, and found that the value of the exponent $b$ in the switching rate formula significantly affects the estimation of the retention time of magnetic random access memory. Based on the Fokker-Planck approach, we also showed that the value of $b$ should be two, not unity as argued in the previous works.Comment: submitted to IEEE Trans. Magn. as the conference proceedings of Intermag 201

Theory of spin accumulation and spin transfer torque in a magnetic domain wall

We study spin accumulation and spin transfer torque in a domain wall by solving the Boltzmann equation with a diffusion approximation. We obtained the analytical expressions of spin accumulation and spin transfer torque. Both the adiabatic and the non-adiabatic components of the spin transfer torque oscillate with the thickness of the domain wall. We show that the oscillation plays a dominant role in the non-adiabatic torque when the domain wall thickness is less than the spin-flip length, which is defined by the product of the Fermi velocity and the spin-flip scattering time