Stable Existence of Phase IV inside Phase II under Pressure in Ce0.8_{0.8}La0.2_{0.2}B6_{6}

We investigate the pressure effect of the electrical resistivity and magnetization of Ce$_{0.8}$La$_{0.2}$B$_{6}$. The situation in which phase IV stably exists inside phase II at H=0 T could be realized by applying a pressure above $P\sim 1.1$ GPa. This originates from the fact that the stability of phase II under pressure is larger than those of phases IV and III. The results seem to be difficult to reproduce by taking the four interactions of $\Gamma_{\mathrm{5u}}$-type AFO, $O_{xy}$-type AFQ, $T_{xyz}$-type AFO, and AF exchange into account within a mean-field calculation framework.Comment: 4 pages, 5 figures, to appear in J. Phys. Soc. Jpn. 79 (2010) No.

Kondo effect in CeXc_{c} (Xc_{c}=S, Se, Te) studied by electrical resistivity under high pressure

We have measured the electrical resistivity of cerium monochalcogenices, CeS, CeSe, and CeTe, under high pressures up to 8 GPa. Pressure dependences of the antiferromagnetic ordering temperature $T_{N}$, crystal field splitting, and the $\ln T$ anomaly of the Kondo effect have been studied to cover the whole region from the magnetic ordering regime at low pressure to the Fermi liquid regime at high pressure. $T_{N}$ initially increases with increasing pressure, and starts to decrease at high pressure as expected from the Doniach's diagram. Simultaneously, the $\ln T$ behavior in the resistivity is enhanced, indicating the enhancement of the Kondo effect by pressure. It is also characteristic in CeX$_{c}$ that the crystal field splitting rapidly decreases at a common rate of $-12.2$ K/GPa. This leads to the increase in the degeneracy of the $f$ state and further enhancement of the Kondo effect. It is shown that the pressure dependent degeneracy of the $f$ state is a key factor to understand the pressure dependence of $T_{N}$, Kondo effect, magnetoresistance, and the peak structure in the temperature dependence of resistivity.Comment: 9 pages, 5 figures, accepted for publication in J. Phys. Soc. Jp