Silicon implantation in GaAs

The electrical properties of room-temperature Si implants in GaAs have been studied. The implantations were done at 300 keV with doses ranging from 1.7×10^13 to 1.7×10^15 cm^–2. The implanted samples were annealed with silicon nitride encapsulants in H2 atmosphere for 30 min at temperatures ranging from 800 to 900°C to electrically activate the implanted ions. Results show that the implanted layers are n type, which implies that the Si ions preferentially go into Ga sites substitutionally. For low-dose implants, high (~90%) electrical activation of the implanted ions is achieved and the depth distribution of the free-electron concentration in the implanted layer roughly follows a Gaussian. However, for high-dose implants, the activation is poor (<15% for a 900 °C anneal) and the electron concentration profile is flat and deeper than the expected range

An Imaging Polarimeter(IMPOL) for multi-wavelength observations

Taking advantage of the advances in array detector technology, an imaging polarimeter (IMPOL) has been constructed for measuring linear polarization in the wavelength band from 400-800 nm. It makes use of a Wollaston prism as the analyser to measure simultaneously the two orthogonal polarization components that define a Stoke's parameter. An achromatic half-wave plate is used to rotate the plane of polarization with respect to the axis of the analyser so that the second Stoke's parameter also can be determined. With a field of view correponding to about 30x30 sq. mm for a 1.2 m, f/13 telescope, a sensitive, liquid-nitrogen cooled CCD camera as the detector and a built-in acquisition and guidance unit, the instrument can be used for studying stellar fields or extended objects with an angular resolution close to 2 arcsec. The instrumental polarization is less than 0.05% and the accuracies of measurement are primarily limited by photon noise for typical observations.Comment: 10 pages including 5 embedded figures; submitted to Astronomy and Astrophysics Supplement Series; available on request to A. N. Ramaprakash ([email protected] or [email protected]); quote report n

Renormalization Group theory outperforms other approaches in statistical comparison between upscaling techniques for porous media

Determining the pressure differential required to achieve a desired flow rate in a porous medium requires solving Darcy's law, a Laplace-like equation, with a spatially varying tensor permeability. In various scenarios, the permeability coefficient is sampled at high spatial resolution, which makes solving Darcy's equation numerically prohibitively expensive. As a consequence, much effort has gone into creating upscaled or low-resolution effective models of the coefficient while ensuring that the estimated flow rate is well reproduced, bringing to fore the classic tradeoff between computational cost and numerical accuracy. Here we perform a statistical study to characterize the relative success of upscaling methods on a large sample of permeability coefficients that are above the percolation threshold. We introduce a new technique based on Mode-Elimination Renormalization-Group theory (MG) to build coarse-scale permeability coefficients. Comparing the results with coefficients upscaled using other methods, we find that MG is consistently more accurate, particularly so due to its ability to address the tensorial nature of the coefficients. MG places a low computational demand, in the manner that we have implemented it, and accurate flow-rate estimates are obtained when using MG-upscaled permeabilities that approach or are beyond the percolation threshold.Comment: 15 pages, 7 figures, Physical Review

Steady-state thermally annealed GaAs with room-temperature-implanted Si

Semi-insulating Cr-doped single-crystal GaAs samples were implanted at room temperature with 300-keV Si ions in the dose range of (0.17–2.0)×1015 cm–2 and were subsequently steady-state annealed at 900 and 950°C for 30 min in a H2 ambient with a Si3N4 coating. Differential Hall measurements showed that an upper threshold of about 2×1018/cm3 exists for the free-electron concentration. The as-implanted atomic-Si profile measured by SIMS follows the theoretical prediction, but is altered during annealing. The Cr distribution also changes, and a band of dislocation loops ~2–3 kÅ wide is revealed by cross-sectional TEM at a mean depth of Rp~3 kÅ. Incomplete electrical activation of the Si is shown to be the primary cause for the effect

Pulsed electron beam induced recrystallization and damage in GaAs

Single-pulse electron-beam irradiations of 300-keV 10^(15)Kr+/cm^2 or 300-keV 3×10^(12)Se+/cm^2 implanted layers in unencapsulated GaAs are studied as a function of the electron beam fluence. The electron beam pulse had a mean electron energy of ~-20 keV and a time duration of ~-10^(–7) s. Analyses by means of MeV He + channeling and TEM show the existence of narrow fluence window (0.4–0.7 J/cm^2) within which amorphous layers can be sucessfully recrystallized, presumably in the liquid phase regime. Too high a fluence produces extensive deep damage and loss of As