Mössbauer Spectrometry Study of Thermally-Activated Electronic Processes in Li_xFePO_4

The solid solution phase of Li_xFePO_4 with different Li concentrations, x, was investigated by Mössbauer spectrometry at temperatures between 25 and 210 °C. The Mössbauer spectra show a temperature dependence of their isomer shifts (E_(IS)) and electric quadrupole splittings (E_Q), typical of thermally activated, electronic relaxation processes involving ^(57)Fe ions. The activation energies for the fluctuations of E_Q and E_(IS) for Fe^(3+) are nearly the same, 570 ± 9 meV, suggesting that both originate from charge hopping. For the Fe^(2+) components of the spectra, the fluctuations of E_Q occurred at lower temperatures than the fluctuations of E_(IS), with an activation energy of 512 ± 12 meV for E_Q and one of 551 ± 7 meV for E_(IS). The more facile fluctuations of E_Q for Fe^(2+) are evidence for local motions of neighboring Li^+ ions. It appears that the electron hopping frequency is lower than that of Li^+ ions. The activation energies of relaxation did not have a measurable dependence on the concentration of lithium, x

Hot Electron Effects in the 2D Superconductor-Insulator Transition

The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below approximately 120 mK. Several observations suggest that this regime is not intrinsically "metallic" but results from the failure of the films' electrons to cool. The onset of this temperature-independent regime can be moved to higher temperatures by either increasing the measuring current or the level of electromagnetic noise. Temperature scaling is successful above 120 mK. Electric field scaling can be mapped onto temperature scaling by relating the electric fields to elevated electron temperatures. These results cast doubt on the existence of an intrinsic metallic regime and on the independent determination of the correlation length and dynamical critical exponents obtained by combining the results of electric field and temperature scaling.Comment: 4 pages, 4 figure

Polarisation-sensitive terahertz detection by multicontact photoconductive receivers

We have developed a terahertz radiation detector that measures both the amplitude and polarization of the electric field as a function of time. The device is a three-contact photoconductive receiver designed so that two orthogonal electric-field components of an arbitrary polarized electromagnetic wave may be detected simultaneously. The detector was fabricated on Fe+ ion-implanted InP. Polarization-sensitive detection is demonstrated with an extinction ratio better than 100:1. This type of device will have immediate application in studies of birefringent and optically active materials in the far-infrared region of the spectrum.Comment: 3 pages, 3 figure

Work Function of Single-wall Silicon Carbide Nanotube

Using first-principles calculations, we study the work function of single wall silicon carbide nanotube (SiCNT). The work function is found to be highly dependent on the tube chirality and diameter. It increases with decreasing the tube diameter. The work function of zigzag SiCNT is always larger than that of armchair SiCNT. We reveal that the difference between the work function of zigzag and armchair SiCNT comes from their different intrinsic electronic structures, for which the singly degenerate energy band above the Fermi level of zigzag SiCNT is specifically responsible. Our finding offers potential usages of SiCNT in field-emission devices.Comment: 3 pages, 3 figure

High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects

A large magnetoresistance effect is obtained at room-temperature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the contacts. The current at B=0T is greatly decreased while the current at B>0T is relatively large due to the band-to-band tunneling effects, resulting in a high magnetoresistance ratio, even at room-temperature. Moreover, we explore the effects of edge-roughness, length, and width of GNR channels on device performance. An increase in edge-roughness and channel length enhances the magnetoresistance ratio while increased channel width can reduce the operating bias.Comment: http://dx.doi.org/10.1063/1.362445