Ultrawide band gap amorphous oxide semiconductor, Ga-Zn-O

We fabricated amorphous oxide semiconductor films, a-(Ga1-xZnx)O-y, at room temperature on glass, which have widely tunable band gaps (E-g) ranging from 3.47-4.12 eV. The highest electron Hall mobility similar to 7 cm(2) V-1 s(-1) was obtained for E-g = similar to 3.8 eV. Ultraviolet photoemission spectroscopy revealed that the increase in E-g with increasing the Ga content comes mostly from the deepening of the valence band maximum level while the conduction band minimum level remains almost unchanged. These characteristics are explained by their electronic structures. As these films can be fabricated at room temperature on plastic, this achievement extends the applications of flexible electronics to opto-electronic integrated circuits associated with deep ultraviolet region. (C) 2016 Elsevier B.V. All rights reserved

Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor

The variety of semiconductor materials has been extended in various directions, for example, to very wide bandgap materials such as oxide semiconductors as well as to amorphous semiconductors. Crystalline beta- Ga2O3 is known as a transparent conducting oxide with an ultra- wide bandgap of similar to 4.9 eV, but amorphous (a-) Ga2Ox is just an electrical insulator because the combination of an ultra-wide bandgap and an amorphous structure has serious difficulties in attaining electronic conduction. This paper reports semiconducting a-(GaOx)-O-2 thin films deposited on glass at room temperature and their applications to thin-film transistors and Schottky diodes, accomplished by suppressing the formation of charge compensation defects. The film density is the most important parameter, and the film density is increased by enhancing the film growth rate by an order of magnitude. Additionally, as opposed to the cases of conventional oxide semiconductors, an appropriately high oxygen partial pressure must be chosen for a-Ga2Ox to reduce electron traps. These considerations produce semiconducting a-Ga2Ox thin films with an electron Hall mobility of similar to 8 cm(2)V(-1) s (-1), a carrier density Ne of similar to 2x10(14) cm-3 and an ultra-wide bandgap of similar to 4.12 eV. An a-Ga2Ox thin-film transistor exhibited reasonable performance such as a saturation mobility of similar to 1.5 cm(2) V-1 s -1 and an on/ off ratio 4107