2,141 research outputs found
Electronic charges and electric potential at LaAlO3/SrTiO3 interfaces studied by core-level photoemission spectroscopy
We studied LaAlO3/SrTiO3 interfaces for varying LaAlO3 thickness by
core-level photoemission spectroscopy. In Ti 2p spectra for conducting "n-type"
interfaces, Ti3+ signals appeared, which were absent for insulating "p-type"
interfaces. The Ti3+ signals increased with LaAlO3 thickness, but started well
below the critical thickness of 4 unit cells for metallic transport. Core-level
shifts with LaAlO3 thickness were much smaller than predicted by the polar
catastrophe model. We attribute these observations to surface
defects/adsorbates providing charges to the interface even below the critical
thickness
Chemical potential shift induced by double-exchange and polaronic effects in Nd_{1-x}Sr_xMnO_3
We have studied the chemical potential shift as a function of temperature in
NdSrMnO (NSMO) by measurements of core-level photoemission
spectra. For ferromagnetic samples ( and 0.45), we observed an unusually
large upward chemical potential shift with decreasing temperature in the
low-temperature region of the ferromagnetic metallic (FM) phase. This can be
explained by the double-exchange (DE) mechanism if the band is split by
dynamical/local Jahn-Teller effect. The shift was suppressed near the Curie
temperature (), which we attribute to the crossover from the DE to
lattice-polaron regimes.Comment: 5 pages, 6 figure
Chemical potential shift and spectral weight transfer in PrCaMnO revealed by photoemission spectroscopy
We have studied the chemical potential shift and changes in the electronic
density of states near the Fermi level () as a function of carrier
concentration in PrCaMnO (PCMO, ) through
the measurements of photoemission spectra. The results showed that the chemical
potential shift was suppressed for x \agt 0.3, where the charge exchange
(CE)-type antiferromagnetic charge-ordered state appears at low temperatures.
We consider this observation to be related to charge self-organization such as
stripe formation on a microscopic scale in this composition range. Together
with the previous observation of monotonous chemical potential shift in
LaSrMnO, we conclude that the tendency toward the charge
self-organization increases with decreasing bandwidth. In the valence band,
spectral weight of the Mn 3 electrons in PCMO was transferred from
1 eV below to the region near with hole doping, leading to a
finite intensity at even in the paramagnetic insulating phase for x \agt
0.3, probably related with the tendency toward charge self-organization. The
finite intensity at in spite of the insulating transport behavior is
consistent with fluctuations involving ferromagnetic metallic states.Comment: 6 pages, 5 figure
Photoemission and x-ray absorption studies of valence states in (Ni,Zn,Fe,Ti)O thin films exhibiting photo-induced magnetization
By means of photoemission and x-ray absorption spectroscopy, we have studied
the electronic structure of (Ni,Zn,Fe,Ti)O thin films, which
exhibits a cluster glass behavior with a spin-freezing temperature of
K and photo-induced magnetization (PIM) below . The Ni and Zn
ions were found to be in the divalent states. Most of the Fe and Ti ions in the
thin films were trivalent (Fe) and tetravalent (Ti),
respectively. While Ti doping did not affect the valence states of the Ni and
Zn ions, a small amount of Fe ions increased with Ti concentration,
consistent with the proposed charge-transfer mechanism of PIM.Comment: 4 pages, 4 figure
Phase Change Observed in Ultrathin Ba0.5Sr0.5TiO3 Films by in-situ Resonant Photoemission Spectroscopy
Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3
(100)substrates by the pulsed laser deposition technique, and were studied by
measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band
region as a function of film thickness, both at room temperature and low
temperature. Our results demonstrated an abrupt variation in the spectral
structures between 2.8 nm (~7 monolayers) and 2.0 nm (~5 monolayers)
Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for
phase change in the range of 2.0 nm to 2.8 nm. This may be ascribed mainly to
the intrinsic size effects.Comment: 13 pages, 4 figure
Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor InVO
The electronic structure of InVO () has been
investigated using photoemission spectroscopy (PES) and x-ray absorption
spectroscopy (XAS). The V core-level PES and XAS spectra revealed
trivalent electronic state of the V ion, consistent with the substitution of
the V ion for the In site. The V 3d partial density of states obtained by the
resonant PES technique showed a sharp peak above the O band. While the O
XAS spectrum of InVO was similar to that of InO,
there were differences in the In and 3d XAS spectra between V-doped and
pure InO. The observations give clear evidence for hybridization
between the In conduction band and the V 3d orbitals in InVO.Comment: 5 pages, 4 figure
- …