Miniaturization of High-Frequency Carrier-Type Thin-Film Magnetic Field Sensor Using Laminated Film

We examined a laminated high-frequency carrier-type thin-film magnetic field sensor that consists of CoNbZr soft magnetic films with Nb nonmagnetic conductive interlayer. The lamination can change domain structure of the sensor and obtain high sensitivity. An impedance change of 6 /spl Omega/ and a gain of 43 k/spl Omega//T was achieved when the length of the laminated sensor was 1 mm. The gain is four times larger than that of a monolayer sensor

Domain Wall Pinning by Step-Like Thickness Change in Magnetic Thin Film

A thin-film element with a steplike thickness change has been fabricated to investigate experimentally a pinning effect of domain walls by a shape control of thin-film devices. Using a Kerr microscope, domain observation has been done to measure pinning characteristics of the element. It has been shown that 40% steplike thickness change of the film thickness can realize a wall pinning, and a pinning field of 2.53 Oe is obtained. The pinning field increases with increasing steplike thickness change ratio

Magnetic domain observation of hydrogenation disproportionation desorption recombination processed Nd－Fe－B powder with a high-resolution Kerr microscope using ultraviolet light

A Kerr microscope that uses ultraviolet (UV) light for high-resolution domain observation was built, and the domain structure and magnetization process of hydrogenation disproportionation desorption recombination (HDDR) powder were examined. The UV Kerr microscope could observe nanometer-sized domain patterns. Applying a dc field of 1.0 kOe to HDDR powder at a desorption recombination (DR) time of 12 min produced abrupt wall motion. The pinning force exerted by the grain boundaries is inadequate for producing high coercivity because the Nd-rich phase layers along these boundaries are absent at a DR time of 12 min. For HDDR powder at a DR time greater than 14 min, changing the magnetic field by up to 1.0 kOe produced no observable wall motion. It follows that the high coercivity of HDDR powder is due to domain wall pinning at the grain boundaries

London equation studies of thin-film superconductors with a triangular antidot lattice

We report on a study of vortex pinning in nanoscale antidot defect arrays in the context of the London Theory. Using a wire network model, we discretize the array with a fine mesh, thereby providing a detailed treatment of pinning phenomena. The use of a fine grid has enabled us to examine both circular and elongated defects, patterned in the form of a rhombus. The latter display pinning characteristics superior to circular defects constructed with the similar area. We calculate pinning potentials for defects containing zero and single quanta, and we obtain a pinning phase diagram for the second matching field, $H = 2 \Phi_{o}$.Comment: 10 pages and 14 figure