An Improvement of Migration Rate of Ayu in Pool-and-Wear Fishway with White Lamp

Source: ICHE Conference Archive - https://mdi-de.baw.de/icheArchive

Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been studied: however, the performance analysis in low-voltage DGOTFTs has not been reported because fabrication of low-voltage DGOTFTs is generally challenging. In this study, we successfully fabricated low-voltage (<5 V) DGOTFTs by employing thin parylene film as gate dielectrics and visualized the charge carrier distributions in low-voltage DGOTFTs by a simulation that is based on finite element method (FEM). The simulation results indicated that the dual-gate system produces a dual-channel and has excellent control of charge carrier density in the organic semiconducting layer, which leads to the better switching characteristics than the single-gate devices

Printed Organic Complementary Inverter with Single SAM Process Using a p-type D-A Polymer Semiconductor

The demonstration of the complementary integrated circuit using printing processes is indispensable for realizing electronic devices using organic thin film transistors. Although complementary integrated circuits have advantages such as low power consumption and a wide output voltage range, complementary integrated circuits fabricated by the printing method have problems regarding driving voltage and performance. Studies on fabrication processes of electronic circuits for printing technology, including optimization and simplification, are also important research topics. In this study, the fabrication process of the printed complementary integrated circuit was simplified by applying a p-type donor-acceptor (D-A) polymer semiconductor, which is not strongly affected by the electrode work function. An inverter circuit and the ring oscillator circuit were demonstrated using this process. The fabricated ring oscillator array showed excellent performance, with low voltage operation and low performance variation