36 research outputs found

    Effects of al concentration on photovoltaic property of ZnO: Al/p-type si by pulsed filtered cathodic vacuum arc deposition system

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    The effects of Al concentration on XPS, Raman, Hall and photovoltaic properties of Al-doped ZnO films were investigated onto Si (100) substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system, at room temperature. The Al doping effects in ZnO was performed by Raman measurements. The chemical state of ZnO:Al (AZO) films on Si substrate was investigated by using X-ray photoelectron spectroscopy (XPS). Hall Effect measurements were applied to characterize the electrical properties. Effect of doping concentration on photovoltaic property was also studied. © 2015, National Institute of Optoelectronics. All right reserved

    Influence of Al concentration on structural and optical properties of Al-doped ZnO thin films

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    Undoped ZnO and Al-doped zinc oxide (ZnO:Al) thin films with different Al concentrations were prepared onto Si (100) substrate by pulsed filtered cathodic vacuum arc deposition system at room temperature. The influence of doping on the structural and optical properties of thin films was investigated. The preferential (002) orientation was weakened by high aluminum doping in films. Raman measurement was performed for the doping effects in the ZnO. Atomic force microscopy images revealed that the surface of undoped ZnO film grown at RT was smoother than that of the Al-doped ZnO (ZnO:Al) films. The reflectance of all films was studied as a function of wavelength using UV-Vis-NIR spectrophotometer. Average total reflectance values of about 35 % in the wavelength range of 400-800 nm were obtained. Optical band gap of the films was determined using the reflectance spectra by means of Kubelka-Munk formula. From optical properties, the band gap energy was estimated for all films. © 2014 Springer Science+Business Media New York

    Structural and electrical properties of nitrogen-doped ZnO thin films

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    ZnO and nitrogen-doped ZnO thin films were prepared onto glass substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system at room temperature. The influence of doping on the structural, electrical and optical properties of thin films was investigated. XRD studies were carried out to analyze and compare the structural quality of undoped and nitrogen-doped ZnO films. Raman measurement was performed to study the doping effects in the ZnO. The optical transmittances of all films are studied as a function of wavelength using UV-VIS-NIR spectrophotometer. The optical band gap values of the films are found using absorbance spectrums. The electrical studies for the films are carried out by using Hall-effect measurements. © 2014 Elsevier B.V. All rights reserved.F-382This research was supported by Scientific Research Project Fund of Cumhuriyet University under the project number F-382 . The Authors thank to Özge Bağlayan from Anadolu University for Raman measurements

    Are patients with lichen planus really prone to urolithiasis? Lichen planus and urolithiasis

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    WOS: 000380066200025PubMed: 27286123Purpose: to investigate whether patients with lichen planus (LP) are really prone to urolithiasis or not. Patients and Methods: We performed a prospective analysis of 40 patients diagnosed with lichen planus (LP) (group I), and 40 volunteers did not have LP before (group II). Participants were all checked for urolithiasis by radiological investigations. Blood samples were analyzed for biochemistry parameters including calcium and uric acid. 24-h urine samples were analyzed to investigate oxalate, citrate calcium, uric acid, magnesium, sodium and creatinine. Results: Men/women ratio and mean age were similar between group I and II (p> 0.05). A presence or history of urolithiasis was detected in 8 (20%) and 2 (% 5) patients in group I and II, respectively (p< 0.05). Hypocitraturia was the most common anomaly with 35% (n: 14) in group I. The rate of hypocitraturia in group II was 12.5% (n: 5) and the difference was statistically significantly different (p= 0.036). In group I, hyperuricosuria and hyperoxaluria followed with rates of 27.5% (n: 11) and 25% (n: 10), respectively. The rate of hyperuricosuria and hyperoxaluria were both 5% (n: 2) in group II and the differences were significant (p< 0.05). Hyperuricemia was another important finding in the patients with LP. It was detected in 13 (32.5%) patients in group I and in 1 (2.5%) participant in group II (p= 0.001). Conclusion: According to our results, metabolic disorders of urolithiasis were highly detected in the patients with LP. However, similar to the etiology of LP, the exact reasons for these metabolic abnormalities in LP remain a mystery
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