The doping dependence of the themopower, in-plane resistivity rho_ab(T),
out-of-plane resistivity rho_c(T), and susceptibility has been systematically
measured for high-quality single crystal Bi2Sr2Ca2Cu3O10+delta. We found that
the transition temperature Tc and pseudogap formation temperature T_rho_c*,
below which rho_c shows a typical upturn, do not change from their optimum
values in the "overdoped" region, even though doping actually proceeds. This
suggests that, in overdoped region, the bulk Tcβ is determined by the always
underdoped inner plane, which have a large superconducting gap, while the
carriers are mostly doped in the outer planes, which have a large phase
stiffness.Comment: 5 pages, 4 figures. to be published in PR