Soft x-ray irradiation induced metallization of layered TiNCl

We have performed soft x-ray spectroscopy in order to study the photoirradiation time dependence of the valence band structure and chemical states of layered transition metal nitride chloride TiNCl. Under the soft x-ray irradiation, the intensities of the states near the Fermi level (EF) and the Ti3+ component increased, while the Cl 2p intensity decreased. Ti 2p–3d resonance photoemission spectroscopy confirmed a distinctive Fermi edge with Ti 3d character. These results indicate the photo-induced metallization originates from deintercalation due to Cl desorption, and thus provide a new carrier doping method that controls the conducting properties of TiNCl

Change in the electronic structure of the bismuth chalcogenide superconductor CsBi4-xPbxTe6 by dissociation of the bismuth dimers

CsBi4−x Pb x Te6 is synthesized and the superconductivity associated with the structural transition from Pb substitution is studied. Photoemission spectroscopy measurements are performed in order to elucidate the relationship between the electronic structure and the occurrence of the superconductivity. When Bi is substituted with Pb, an electron doping-like change in the electronic structure is directly observed which is contrary to the naive expectation of hole doping. This observation is consistent with band structure calculations and appears to be a unique characteristic of CsBi4−x Pb x Te6 because of the dissociation of Bi dimers upon Pb substitution. These results indicate that it may be possible to control the electron and hole doping via manipulating the Bi dimers through Pb substitution

Electronic Structure of the Novel Filled Skutterudite PrPt₄Ge₁₂ Superconductor

We have performed soft x-ray photoemission spectroscopy (SXPES) and resonant photoemission spectroscopy (RPES) of the filled skutterudite superconductor PrPt4Ge12 in order to study the electronic structure of valence band and the character of Pr 4f. SXPES of PrPt4Ge12 measured with 1200 eV photon energy, where spectral contribution of Pr 4f is negligible, was found nearly identical with that of LaPt4Ge12, indicating similarity of Pt–Ge derived electronic states of the two compounds. Good correspondence with band calculations allows us to ascribe the dominant Ge 4p character of the density of states at the Fermi level (EF). Pr 3d → 4f RPES shows that, although Pr 4f electrons in PrPt4Ge12 are not as strongly hybridized with conduction electrons near EF as in PrFe4P12, there are finite Pr 4f contribution to the states near EF in PrPt4Ge12. These PES results give the information of fundamental electronic structure for understanding the physical properties of the novel filled skutterudite superconductor PrPt4Ge12