Passivation of Zn_3P_2 substrates by aqueous chemical etching and air oxidation

Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn_(3)P_2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn_(3)P_2 substrates. Zn_(3)P_2 substrates that were etched with Br_2 in methanol exhibited surface recombination velocity values of 2.8 × 10^4 cm s^(−1), whereas substrates that were further treated by aqueous HF–H_(2)O_2 exhibited surface recombination velocity values of 1.0 × 10^4 cm s^(−1). Zn_(3)P_2 substrates that were etched with Br_2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 10^3 cm s^(−1), as well as improved ideality in metal/insulator/semiconductor devices